IRGP4760DPBF_15 [INFINEON]
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode;型号: | IRGP4760DPBF_15 |
厂家: | Infineon |
描述: | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode 栅 |
文件: | 总12页 (文件大小:923K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IRGP4760DPbF
IRGP4760D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 650V
C
IC = 60A, TC =100°C
tSC 5.5µs, TJ(max) = 175°C
CE(ON) typ. = 1.7V @ IC = 48A
G
E
E
C
C
G
G
E
V
IRGP4760DPbF
IRGP4760D‐EPbF
TO‐247AD
n-channel
TO‐247AC
Applications
• Industrial Motor Drive
• UPS
G
C
E
Gate
Collector
Emitter
• Solar Inverters
• Welding
Features
Benefits
Low VCE(ON) and Switching Losses
5.5µs Short Circuit SOA
Square RBSOA
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
Increased Reliability
Excellent Current Sharing in Parallel Operation
Lead-Free, RoHs compliant
Environmentally friendly
Base part number
Package Type
Standard Pack
Form
Orderable Part Number
Quantity
IRGP4760DPbF
IRGP4760D-EPbF
TO-247AC
TO-247AD
Tube
Tube
25
25
IRGP4760DPbF
IRGP4760D-EPbF
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V
650
90
60
V
144
ILM
Clamped Inductive Load Current, VGE = 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
192
74
45
192
±20
325
160
A
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
V
W
Maximum Power Dissipation
TJ
Operating Junction and
-40 to +175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.46
0.97
–––
40
Units
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
RJC (IGBT)
RJC (Diode)
RCS
°C/W
RJA
1
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IRGP4760DPbF/IRGP4760D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V(BR)CES
V(BR)CES/TJ
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
650
—
—
0.69
—
—
V
VGE = 0V, IC = 100µA
V/°C VGE = 0V, IC = 3mA (25°C-175°C)
—
—
5.5
1.7
2.1
—
2.0
—
7.4
V
IC = 48A, VGE = 15V, TJ = 25°C
IC = 48A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 1.4mA
VCE(on)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
V
Threshold Voltage Temperature Coeff.
Forward Transconductance
—
-23
—
mV/°C VCE = VGE, IC = 1.4mA (25°C-150°C)
VGE(th)/TJ
gfe
—
—
—
—
—
—
31
1.0
890
—
1.9
1.4
—
35
—
±100
2.5
—
S
µA
V
V
CE = 50V, IC = 48A, PW = 20µs
GE = 0V, VCE = 650V
ICES
IGES
VF
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
VGE = 0V, VCE = 650V, TJ = 175°C
nA VGE = ±20V
V
IF = 48A
IF = 48A, TJ = 175°C
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
—
—
—
—
—
—
—
—
—
—
—
96
30
40
1.7
1.0
2.7
70
60
140
30
145
45
60
2.6
1.9
4.5
90
80
160
50
IC = 48A
VGE = 15V
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
nC
mJ
VCC = 400V
IC = 48A, VCC = 400V, VGE=15V
RG = 10, L = 210µH, TJ = 25°C
Energy losses include tail & diode
reverse recovery
ns
2.9
—
Eoff
Etotal
td(on)
tr
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
—
—
—
—
—
1.4
4.3
55
—
—
—
—
—
mJ
IC = 48A, VCC = 400V, VGE=15V
RG = 10, L = 210µH, TJ = 175°C
Energy losses include tail & diode
reverse recovery
60
ns
td(off)
Turn-Off delay time
145
tf
Fall time
—
—
—
—
65
2935
235
84
—
—
—
—
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGE = 0V
pF
VCC = 30V
f = 1.0MHz
TJ = 175°C, IC = 192A
FULL SQUARE
VCC = 520V, Vp ≤ 650V
RBSOA
Reverse Bias Safe Operating Area
VGE = +20V to 0V
TJ = 150°C,VCC = 400V, Vp ≤ 650V
VGE = +15V to 0V
SCSOA
Short Circuit Safe Operating Area
5.5
—
—
µs
TJ = 175°C
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
370
170
25
—
—
—
µJ
ns
A
VCC = 400V, IF = 48A
VGE = 15V, Rg = 10
Irr
Peak Reverse Recovery Current
Notes:
VCC = 80% (VCES), VGE = 20V.
R is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
2
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IRGP4760DPbF/IRGP4760D-EPbF
100
90
80
70
60
50
40
30
20
10
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 163W
Square Wave:
VCC
I
Diode as specified
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
80
60
40
20
0
350
300
250
200
150
100
50
0
25
50
75
100
125
150
175
25
50
75
100
(°C)
125
150
175
T
(°C)
T
C
C
Fig. 3 - Power Dissipation vs.
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
Case Temperature
1000
100
10
1000
100
10µsec
10
100µsec
1
1msec
DC
Tc = 25°C
Tj = 175°C
Single Pulse
1
0.1
10
100
1000
1
10
100
(V)
1000
10000
V
(V)
V
CE
CE
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE = 20V
Fig. 4 - Forward SOA
TC = 25°C; TJ ≤ 175°C; VGE = 15V
3
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IRGP4760DPbF/IRGP4760D-EPbF
200
150
100
50
200
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
150
100
50
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
Fig. 7 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
TJ = 25°C; tp = 20µs
200
150
100
50
200
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
150
100
50
-40°C
25°C
175°C
0
0
0
2
4
6
8
10
0
1
2
3
4
V
(V)
V
(V)
CE
F
Fig. 9 - Typ. Diode Forward Voltage Drop
Fig. 8 - Typ. IGBT Output Characteristics
Characteristics
TJ = 175°C; tp = 20µs
12
12
10
10
8
I
= 24A
= 48A
= 96A
I
= 24A
= 48A
= 96A
CE
CE
I
I
8
6
4
2
0
CE
CE
I
I
CE
CE
6
4
2
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 11 - Typical VCE vs. VGE
TJ = -40°C
TJ = 25°C
4
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IRGP4760DPbF/IRGP4760D-EPbF
12
10
8
200
T = 25°C
J
I
= 24A
= 48A
= 96A
T = 175°C
150
100
50
CE
J
I
CE
I
CE
6
4
2
0
0
5
10
15
20
4
6
8
10
(V)
12
14
V
(V)
V
GE
GE
Fig. 13 - Typ. Transfer Characteristics
Fig. 12 - Typical VCE vs. VGE
VCE = 50V; tp = 20µs
TJ = 175°C
10
9
8
7
6
5
4
3
2
1
0
1000
100
10
E
ON
td
OFF
t
F
td
ON
t
E
R
OFF
0
10 20 30 40 50 60 70 80 90 100110
(A)
0
10 20 30 40 50 60 70 80 90 100
(A)
I
C
I
C
Fig. 14 - Typ. Energy Loss vs. IC
Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; L = 210µH; VCE = 400V, RG = 10; VGE = 15V
TJ = 175°C; L = 210µH; VCE = 400V, RG = 10; VGE = 15V
8
7
6
10000
1000
E
ON
td
OFF
td
5
4
3
ON
t
R
100
t
F
E
OFF
2
1
0
10
1
0
20
40
60
()
80
100
120
0
20
40
60
()
80
100
R
G
R
G
Fig. 17 - Typ. Switching Time vs. RG
TJ = 175°C; L = 210µH; VCE = 400V, ICE = 48A; VGE = 15V
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 210µH; VCE = 400V, ICE = 48A; VGE = 15V
5
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IRGP4760DPbF/IRGP4760D-EPbF
30
25
20
15
10
5
30
5
R
G =
25
20
15
10
5
10
R
G =
R
47
G =
R
100
G =
20 30 40 50 60 70 80 90 100
(A)
0
20
40
60
80
100
I
R
(
F
G
Fig. 19 - Typ. Diode IRR vs. RG
Fig. 18 - Typ. Diode IRR vs. IF
TJ = 175°C
TJ = 175°C
30
25
20
15
10
5
3000
2600
2200
1800
1400
96A
10
48A
22
24A
47
100
0
200
400
600
800
1000
200
250
300
350
400
450
500
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig. 20 - Typ. Diode IRR vs. diF/dt
CC = 400V; VGE = 15V; IF = 48A; TJ = 175°C
Fig. 21 - Typ. Diode QRR vs. diF/dt
V
VCC = 400V; VGE = 15V; TJ = 175°C
20
16
12
8
240
200
160
120
80
300
250
200
150
100
50
R
= 10
T
G
sc
I
sc
= 22
R
G
= 47
R
G
4
R
= 100
G
0
40
8
10
12
14
(V)
16
18
20 30 40 50 60 70 80 90 100
(A)
V
I
GE
F
Fig. 23 - VGE vs. Short Circuit Time
CC = 400V; TC = 150°C
Fig. 22 - Typ. Diode ERR vs. IF
V
TJ = 175°C
6
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IRGP4760DPbF/IRGP4760D-EPbF
16
10000
1000
100
14
12
10
8
V
V
= 400V
= 300V
CES
CES
Cies
6
Coes
Cres
4
2
0
10
0
20
Q
40
60
80
100
0
100
200
300
(V)
400
500
600
, Total Gate Charge (nC)
V
G
CE
Fig. 25 - Typical Gate Charge vs. VGE
CE = 48A
Fig. 24 - Typ. Capacitance vs. VCE
I
VGE= 0V; f = 1MHz
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
Ri (°C/W)
0.131857
0.190293
0.137850
i (sec)
0.000301
0.003726
0.021183
0.02
0.01
J J
1 1
2 2
33
Ci= iRi
Ci= iRi
0.001
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
Ri (°C/W)
i (sec)
0.000075
0.000444
0.005103
0.032691
0.1
0.10
R1
R1
R2
R2
R3
R3
R4
R4
0.05
0.02
0.01
0.034171
0.322392
0.378848
0.236223
J J
CC
1 1
2 2
3 3
4 4
0.01
0.001
0.0001
Ci= iRi
Ci= iRi
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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IRGP4760DPbF/IRGP4760D-EPbF
L
L
80 V
+
-
VCC
DUT
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
DUT
VCC
-5V
DUT /
VCC
DRIVER
Rg
RSH
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
100K
R = VCC
ICM
D1 22K
C sense
VCC
DUT
DUT
G force
0.0075µF
Rg
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
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Fig.C.T.6 - BVCES Filter Circuit
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8
IRGP4760DPbF/IRGP4760D-EPbF
600
500
400
300
200
100
0
120
100
80
600
500
400
300
200
100
0
120
100
80
tf
tr
TEST
CURRENT
60
60
90% ICE
40
40
90% ICE
10% VCE
20
20
10% ICE
10%ICE
10% VCE
0
0
Eon Loss
5.25
Eoff Loss
-100
-20
-100
-20
4.25
4.75
time (µs)
-0.5
0
0.5
1
time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 175°C using Fig. CT.4
600
500
400
300
200
100
0
600
500
400
300
200
100
0
60
50
40
30
20
10
0
QRR
VCE
ICE
tRR
Peak
IRR
-10
-20
-30
-100
-100
-0.30
-0.10
time (µs)
0.10
2
4
6
8
10
time (µs)
Fig. WF3 - Typ. Diode Recovery Waveform
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 150°C using Fig. CT.3
9
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IRGP4760DPbF/IRGP4760D-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
LOT CODE 5657
IRFPE30
135H
57
RECTIFIER
LOGO
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
56
DATE CODE
YEAR 1 = 2001
WEEK 35
ASSEMBLY
LOT CODE
Note: "P" in assembly line position
indicates "Lead-Free"
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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November 12, 2014
IRGP4760DPbF/IRGP4760D-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D -E
W IT H A S S E M B L Y
P A R T N U M B E R
IN T E R N A T IO N A L
L O T C O D E 5 6 5 7
R E C T IF IE R
L O G O
A S S E M B L E D O N W W 3 5 , 2 0 0 0
IN T H E A S S E M B L Y L IN E "H "
0 3 5 H
5 7
5 6
D A T E C O D E
Y E A R
W E E K 3 5
L IN E
0
=
2 0 0 0
A S S E M B L Y
L O T C O D E
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d -F re e "
H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
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IRGP4760DPbF/IRGP4760D-EPbF
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F) ††
TO-247AC
TO-247AD
N/A
Moisture Sensitivity Level
N/A
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
Updated IC vs. TC graph Fig.2 to match page1 spec data on page 3.
8/21/2014
Added IFM Diode Maximum Forward Current = 192A with the note on page 1.
Removed note from switching losses test condition on page 2.
11/12/2014
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
12
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November 12, 2014
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