IRGP4750DPBF_15 [INFINEON]
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode;
| 型号： | IRGP4750DPBF_15 |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode 栅 |
| 文件： | 总12页 (文件大小：671K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRGP4750DPbF
IRGP4750D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 650V
C
IC = 50A, TC =100°C
tSC 5.5µs, TJ(max) = 175°C
CE(ON) typ. = 1.7V @ IC = 35A
G
V
E
IRGP4750DPbF
IRGP4750D‐EPbF
TO‐247AD
n-channel
Applications
Industrial Motor Drive
UPS
Solar Inverters
Welding
TO‐247AC
G
C
E
Gate
Collector
Emitter
Features
Benefits
Low VCE(ON) and Switching Losses
5.5µs Short Circuit SOA
Square RBSOA
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
Increased Reliability
Excellent Current Sharing in Parallel Operation
Lead-Free, RoHs compliant
Environmentally friendly
Base part number
Package Type
Standard Pack
Form
Orderable Part Number
Quantity
IRGP4750DPbF
IRGP4750D-EPbF
TO-247AC
TO-247AD
Tube
Tube
25
25
IRGP4750DPbF
IRGP4750D-EPbF
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
650
70
50
105
140
80
V
ILM
A
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
50
140
±20
273
136
V
W
Maximum Power Dissipation
TJ
Operating Junction and
-40 to +175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.55
0.95
–––
40
Units
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
RJC (IGBT)
RJC (Diode)
RCS
°C/W
RJA
1
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IRGP4750DPbF/IRGP4750D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V(BR)CES
V(BR)CES/TJ
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
650
—
—
0.72
—
—
V
VGE = 0V, IC = 100µA
V/°C VGE = 0V, IC = 2.0mA (25°C-175°C)
—
—
5.5
1.7
2.1
—
2.0
—
7.4
IC = 35A, VGE = 15V, TJ = 25°C
IC = 35A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 1.4mA
VCE(on)
VGE(th)
Collector-to-Emitter Saturation Voltage
V
Gate Threshold Voltage
V
Threshold Voltage Temperature Coeff.
Forward Transconductance
—
-18
—
mV/°C VCE = VGE, IC = 1.4mA (25°C-175°C)
VGE(th)/TJ
gfe
—
—
—
—
—
—
23
1.0
1.0
—
1.6
1.3
—
35
—
±100
2.1
—
S
µA
V
V
CE = 50V, IC = 35A, PW = 20µs
GE = 0V, VCE = 650V
ICES
IGES
VF
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
mA VGE = 0V, VCE = 650V, TJ = 175°C
nA
VGE = ±20V
IF = 35A
IF = 35A, TJ = 175°C
V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
—
—
—
—
—
—
—
—
—
—
—
70
20
30
1.3
0.5
1.8
50
30
105
20
105
30
45
2.2
0.8
3.0
70
50
120
40
IC = 35A
VGE = 15V
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
nC
mJ
VCC = 400V
IC = 35A, VCC = 400V, VGE=15V
RG = 10, TJ = 25°C
Energy losses include tail & diode
reverse recovery
ns
2.4
—
Eoff
Etotal
td(on)
tr
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
—
—
—
—
—
0.9
3.3
45
—
—
—
—
—
mJ
IC = 35A, VCC = 400V, VGE=15V
RG = 10, TJ = 175°C
Energy losses include tail & diode
reverse recovery
30
ns
td(off)
Turn-Off delay time
120
tf
Fall time
—
—
—
—
70
2200
190
60
—
—
—
—
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGE = 0V
pF
VCC = 30V
f = 1.0MHz
TJ = 175°C, IC = 140A
VCC = 520V, Vp ≤ 650V
FULL SQUARE
RBSOA
Reverse Bias Safe Operating Area
VGE = +20V to 0V
TJ = 150°C,VCC = 400V, Vp ≤ 650V
VGE = +15V to 0V
SCSOA
Short Circuit Safe Operating Area
5.5
—
—
µs
TJ = 175°C
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
380
150
27
—
—
—
µJ
ns
A
VCC = 400V, IF = 35A
VGE = 15V, Rg = 10
Irr
Peak Reverse Recovery Current
Notes:
VCC = 80% (VCES), VGE = 20V.
R is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
2
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IRGP4750DPbF/IRGP4750D-EPbF
80
70
60
50
40
30
20
10
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 136W
Square Wave:
VCC
I
Diode as specified
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
300
80
60
40
20
0
250
200
150
100
50
0
25
50
75
100
(°C)
125
150
175
25
50
75
100
(°C)
125
150
175
T
T
C
C
Fig. 3 - Power Dissipation vs.
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
Case Temperature
1000
100
10
1000
100
10µsec
100µsec
10
1msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
0.1
10
100
1000
1
10
100
1000
V
(V)
CE
V
(V)
CE
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE = 20V
Fig. 4 - Forward SOA
TC = 25°C; TJ ≤ 175°C; VGE = 15V
3
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November 13, 2014
IRGP4750DPbF/IRGP4750D-EPbF
140
120
100
80
140
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
120
100
80
60
40
20
0
60
40
20
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
Fig. 7 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
TJ = 25°C; tp = 20µs
140
120
100
80
140
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
120
100
80
60
40
20
0
60
-40°C
25°C
175°C
40
20
0
0
2
4
6
8
10
0.0
0.5
1.0
1.5
(V)
2.0
2.5
3.0
V
(V)
CE
V
F
Fig. 9 - Typ. Diode Forward Voltage Drop
Fig. 8 - Typ. IGBT Output Characteristics
Characteristics
TJ = 175°C; tp = 20µs
10
10
8
8
6
4
2
0
I
= 18A
= 35A
= 70A
CE
I
= 18A
= 35A
= 70A
CE
I
CE
I
CE
I
6
CE
I
CE
4
2
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 11 - Typical VCE vs. VGE
TJ = -40°C
TJ = 25°C
4
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IRGP4750DPbF/IRGP4750D-EPbF
10
8
140
T = 25°C
J
120
100
80
60
40
20
0
T = 175°C
J
I
= 18A
= 35A
= 70A
CE
I
CE
6
I
CE
4
2
0
5
10
15
20
4
6
8
10
12
14
16
V
(V)
V
(V)
GE
GE
Fig. 13 - Typ. Transfer Characteristics
Fig. 12 - Typical VCE vs. VGE
VCE = 50V; tp = 20µs
TJ = 175°C
8
7
6
5
4
3
2
1
0
1000
100
10
t
F
td
OFF
E
ON
td
ON
t
R
E
OFF
1
0
10
20
30
I
40
(A)
50
60
70
0
10
20
30
I
40
(A)
50
60
70
C
C
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 175°C; ; VCE = 400V, RG = 10; VGE = 15V
Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; VCE = 400V, RG = 10; VGE = 15V
6
1000
5
4
3
2
1
0
td
OFF
E
ON
td
ON
100
t
F
t
R
E
OFF
10
0
20
40
60
80
100
0
20
40
60
( )
80
100
Rg ( )
R
G
Fig. 17 - Typ. Switching Time vs. RG
TJ = 175°C; VCE = 400V, ICE = 35A; VGE = 15V
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 175°C; VCE = 400V, ICE = 35A; VGE = 15V
5
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IRGP4750DPbF/IRGP4750D-EPbF
40
45
35
25
15
5
5
R
R
30
20
10
0
G =
G =
10
R
100
G =
R
47
G =
0
20
40
60
(
80
100
10
20
30
40
(A)
50
60
70
I
R
G
F
Fig. 19 - Typ. Diode IRR vs. RG
Fig. 18 - Typ. Diode IRR vs. IF
TJ = 175°C
TJ = 175°C
40
30
20
10
0
5000
4000
3000
2000
1000
70A
35A
18A
0
200
400
600
800 1000 1200
0
200 400 600 800 1000 1200 1400
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig. 20 - Typ. Diode IRR vs. diF/dt
CC = 400V; VGE = 15V; IF = 35A; TJ = 175°C
Fig. 21 - Typ. Diode QRR vs. diF/dt
V
VCC = 400V; VGE = 15V; TJ = 175°C
25
20
15
10
5
180
140
100
60
800
600
400
200
0
5
=
R
R
R
G
G
= 10
= 47
= 100
G
G
R
I
sc
T
sc
20
9
10
11
12
V
13
14
15
16
0
10 20 30 40 50 60 70 80
(A)
(V)
I
GE
F
Fig. 23 - VGE vs. Short Circuit Time
CC = 400V; TC = 150°C
Fig. 22 - Typ. Diode ERR vs. IF
V
TJ = 175°C
6
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IRGP4750DPbF/IRGP4750D-EPbF
16
10000
1000
100
10
14
12
10
8
V
V
= 400V
= 300V
CES
CES
Cies
Coes
6
Cres
4
2
1
0
0
100
200
300
(V)
400
500
600
0
10 20 30 40 50 60 70 80
, Total Gate Charge (nC)
V
Q
CE
G
Fig. 25 - Typical Gate Charge vs. VGE
CE = 35A
Fig. 24 - Typ. Capacitance vs. VCE
I
VGE= 0V; f = 1MHz
1
D = 0.50
0.20
0.10
0.05
0.1
0.01
R1
R1
R2
R2
R3
R3
0.02
0.01
Ri (°C/W)
0.16631
0.23758
0.14552
i (sec)
0.000327
0.003309
0.01848
J J
CC
1 1
2 2
33
Ci= iRi
SINGLE PULSE
( THERMAL RESPONSE )
Ci= iRi
0.001
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.1
0.10
0.05
Ri (°C/W)
i (sec)
0.000029
0.000327
0.003652
0.028923
R1
R1
R2
R2
R3
R3
R4
R4
0.01502
0.26877
0.40240
0.26426
0.02
0.01
J J
CC
0.01
0.001
0.0001
1 1
2 2
3 3
4 4
Ci= iRi
Ci= iRi
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
© 2014 International Rectifier Submit Datasheet Feedback November 13, 2014
7
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IRGP4750DPbF/IRGP4750D-EPbF
L
L
80 V
+
-
VCC
DUT
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
DUT
VCC
-5V
DUT /
VCC
DRIVER
Rg
RSH
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
100K
R = VCC
ICM
D1 22K
C sense
VCC
DUT
DUT
G force
0.0075µF
Rg
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
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Fig.C.T.6 - BVCES Filter Circuit
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8
IRGP4750DPbF/IRGP4750D-EPbF
600
500
400
300
200
100
0
90
75
60
45
30
15
0
500
400
300
200
100
0
75
60
45
30
15
0
tf
tr
TEST
CURRENT
90% ICE
90% ICE
10%ICE
10% VCE
10% VCE
10% ICE
Eoff Loss
Eon Loss
0.6
-100
-15
-100
-15
-0.3
-0.1
0.1
0.3
0.5
-0.3
0
0.3
time (µs)
0.9
time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 175°C using Fig. CT.4
500
400
300
200
100
0
500
40
VCE
QRR
tRR
30
20
400
300
200
100
0
10
0
ICE
-10
-20
-30
Peak
IRR
-100
-100
-0.40
0.00
0.40
0.80
-5.00
0.00
5.00
10.00
Time (uS)
time (µS)
Fig. WF3 - Typ. Diode Recovery Waveform
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 150°C using Fig. CT.3
9
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IRGP4750DPbF/IRGP4750D-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
IRFPE30
135H
57
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
56
DATE CODE
YEAR 1 = 2001
WEEK 35
ASSEMBLY
LOT CODE
Note: "P" in assembly line position
indicates "Lead-Free"
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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November 13, 2014
IRGP4750DPbF/IRGP4750D-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D -E
W IT H A S S E M B L Y
P A R T N U M B E R
IN T E R N A T IO N A L
L O T C O D E 5 6 5 7
R E C T IF IE R
L O G O
A S S E M B L E D O N W W 3 5 , 2 0 0 0
IN T H E A S S E M B L Y L IN E "H "
0 3 5 H
5 7
5 6
D A T E C O D E
Y E A R
W E E K 3 5
L IN E
0
=
2 0 0 0
A S S E M B L Y
L O T C O D E
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d -F re e "
H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
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November 13, 2014
IRGP4750DPbF/IRGP4750D-EPbF
Qualification Information†
Qualification Level
Industrial
TO-247AC
TO-247AD
N/A
Yes
Moisture Sensitivity Level
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
Added IFM Diode Maximum Forward Current = 140A with the note on page 1.
Removed note from switching losses test condition on page 2.
11/13/2014
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
12
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November 13, 2014
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