IRGP6650DPBF [INFINEON]
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode;
| 型号： | IRGP6650DPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode 栅 |
| 文件： | 总13页 (文件大小：681K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRGP6650DPbF
IRGP6650D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V
C
IC = 50A, TC =100°C
tSC 5µs, TJ(max) = 175°C
CE(ON) typ. = 1.65V @ IC = 35A
G
E
V
IRGP6650DPbF
IRGP6650D‐EPbF
TO‐247AD
n-channel
TO‐247AC
Applications
G
Gate
C
E
Welding
H Bridge Converters
Collector
Emitter
Features
Low VCE(ON) and Switching Losses
Benefits
High Efficiency in a Wide Range of Applications
Optimized Diode for Full Bridge Hard Switch Converters
Square RBSOA and Maximum Temperature of 175°C
Optimized for Welding and H Bridge Converters
Improved Reliability due to Rugged Hard Switching
Performance and High Power Capability
Enables Short Circuit Protection Operation
Excellent Current Sharing in Parallel Operation
Environmentally friendly
5µs Short Circuit
Positive VCE (ON) Temperature Co-efficient
Lead-free, RoHS compliant
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Tube
Tube
Quantity
IRGP6650DPbF
IRGP6650D-EPbF
TO-247AC
TO-247AD
25
25
IRGP6650DPbF
IRGP6650D-EPbF
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V
600
80
50
105
140
V
A
Clamped Inductive Load Current, VGE = 20V
IFRM @ TC = 100°C Diode Repetitive Peak Forward Current
25
IFM
Diode Maximum Forward Current
140
±20
VGE
Continuous Gate-to-Emitter Voltage
V
PD @ TC = 25°C
PD @ TC = 100°C
TJ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
306
153
-40 to +175
W
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.49
3.35
–––
40
Units
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
RJC (IGBT)
RJC (Diode)
RCS
°C/W
RJA
1
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
November 14, 2014
IRGP6650DPbF/IRGP6650D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V(BR)CES
V(BR)CES/TJ
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
600
—
—
0.45
—
—
V
VGE = 0V, IC = 100µA
V/°C VGE = 0V, IC = 1.0mA (25°C-175°C)
—
—
—
1.65
2.05
2.10
—
1.95
—
—
IC = 35A, VGE = 15V, TJ = 25°C
VCE(on)
VGE(th)
Collector-to-Emitter Saturation Voltage
V
V
IC = 35A, VGE = 15V, TJ = 150°C
IC = 35A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 1.0mA
Gate Threshold Voltage
4.0
6.5
Threshold Voltage Temperature Coeff.
Forward Transconductance
—
-18
—
mV/°C VCE = VGE, IC = 1.0mA (25°C-175°C)
VGE(th)/TJ
gfe
—
—
—
—
—
—
22
1.0
600
—
1.80
1.30
—
50
—
±100
2.80
—
S
µA
nA
V
V
V
CE = 50V, IC = 35A, PW = 20µs
GE = 0V, VCE = 600V
ICES
IGES
VF
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
VGE = 0V, VCE = 600V, TJ = 175°C
VGE = ±20V
IF = 8A
IF = 8A, TJ = 175°C
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
75
20
Max Units
Conditions
Qg
—
IC = 35A
VGE = 15V
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
nC
µJ
VCC = 400V
30
300
630
930
40
30
105
20
640
930
1570
40
30
120
60
IC = 35A, VCC = 400V, VGE=15V
RG = 10, L=210µH, TJ = 25°C
Energy losses include tail & diode
reverse recovery
ns
µJ
ns
pF
td(off)
tf
Turn-Off delay time
Fall time
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
IC = 35A, VCC = 400V, VGE=15V
RG = 10, L=210µH, TJ = 175°C
Energy losses include tail & diode
reverse recovery
2220
130
65
VGE = 0V
VCC = 30V
Output Capacitance
Reverse Transfer Capacitance
f = 1.0MHz
TJ = 175°C, IC = 140A
VCC = 480V, Vp ≤ 600V
FULL SQUARE
RBSOA
Reverse Bias Safe Operating Area
VGE = +20V to 0V
TJ = 150°C,VCC = 400V, Vp ≤ 600V
VGE = +15V to 0V
SCSOA
Short Circuit Safe Operating Area
5
—
—
µs
Erec
trr
Irr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
—
—
—
165
50
14
—
—
—
µJ TJ = 175°C
VCC = 400V, IF = 8A, VGE = 15V
ns
A
Rg = 22L=1.0mH, Ls=150nH
Notes:
VCC = 80% (VCES), VGE = 20V, Rg = 10L=210µH.
R is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
fsw =40KHz, refer to figure 26.
2
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
November 14, 2014
IRGP6650DPbF/IRGP6650D-EPbF
90
80
70
60
50
40
30
20
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 153W
Square Wave:
VCC
I
Diode as specified
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
350
300
250
200
150
100
50
100
80
60
40
20
0
0
25
50
75
100
(°C)
125
150
175
25
50
75
100
(°C)
125
150
175
T
T
C
C
Fig. 3 - Power Dissipation vs.
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
Case Temperature
1000
1000
100
10
100
10µsec
100µsec
10
DC 1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
1000
1
10
100
1000
V
(V)
V
(V)
CE
CE
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE = 20V
Fig. 4 - Forward SOA
TC = 25°C; TJ ≤ 175°C; VGE = 15V
3
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
November 14, 2014
IRGP6650DPbF/IRGP6650D-EPbF
140
140
120
100
80
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
120
100
80
60
40
20
0
60
40
20
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
Fig. 7 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
TJ = 25°C; tp = 20µs
140
140
120
100
80
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
-40°C
25°C
175°C
GE
GE
GE
GE
GE
120
100
80
60
40
20
0
60
40
20
0
0.0
1.0
2.0
3.0
(V)
4.0
5.0
6.0
0
2
4
6
8
10
V
V
(V)
F
CE
Fig. 9 - Typ. Diode Forward Voltage Drop
Fig. 8 - Typ. IGBT Output Characteristics
Characteristics
TJ = 175°C; tp = 20µs
8
8
6
I
= 18A
= 35A
= 70A
CE
6
4
2
0
I
I
= 18A
= 35A
= 70A
CE
CE
I
I
CE
CE
I
CE
4
2
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 11 - Typical VCE vs. VGE
TJ = -40°C
TJ = 25°C
4
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
November 14, 2014
IRGP6650DPbF/IRGP6650D-EPbF
8
6
4
2
0
140
T = 25°C
J
120
100
80
60
40
20
0
T = 175°C
J
I
= 18A
= 35A
= 70A
CE
I
CE
I
CE
5
10
15
20
2
4
6
8
10
12
14
16
V
(V)
V
(V)
GE
GE
Fig. 13 - Typ. Transfer Characteristics
Fig. 12 - Typical VCE vs. VGE
VCE = 50V; tp = 20µs
TJ = 175°C
4000
3000
2000
1000
0
1000
100
10
td
OFF
t
F
td
ON
t
R
E
OFF
E
ON
1
0
10
20
30
I
40
(A)
50
60
70
0
10
20
30
I
40
(A)
50
60
70
C
C
Fig. 14 - Typ. Energy Loss vs. IC
Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; ; VCE = 400V, RG = 10; VGE = 15V
TJ = 175°C; VCE = 400V, RG = 10; VGE = 15V
1000
3000
2500
2000
1500
td
OFF
td
ON
100
t
F
E
t
OFF
R
1000
E
ON
10
500
0
20
40
60
( )
80
100
0
20
40
60
80
100
R
Rg ( )
G
Fig. 17 - Typ. Switching Time vs. RG
TJ = 175°C; VCE = 400V, ICE = 35A; VGE = 15V
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 175°C; VCE = 400V, ICE = 35A; VGE = 15V
5
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
November 14, 2014
IRGP6650DPbF/IRGP6650D-EPbF
16
20
15
10
5
R
10
12
8
G =
R
22
G =
R
47
G =
4
R
100
G =
0
0
0
20
40
60
(
80
100
2
4
6
8
10
(A)
12
14
16
I
R
G
F
Fig. 19 - Typ. Diode IRR vs. RG
Fig. 18 - Typ. Diode IRR vs. IF
TJ = 175°C
TJ = 175°C
16
14
12
10
8
1000
16A
800
22
10
47
600
400
200
100
8A
6
4A
4
0
200
400
600
800
0
200
400
600
800
1000
di /dt (A/µs)
F
di /dt (A/µs)
Fig. 21 - Typ. DiodeFQRR vs. diF/dt
Fig. 20 - Typ. Diode IRR vs. diF/dt
CC = 400V; VGE = 15V; IF = 8A; TJ = 175°C
V
VCC = 400V; VGE = 15V; TJ = 175°C
250
200
150
100
50
20
16
12
8
250
200
150
100
50
R
= 10
G
R
= 22
= 47
G
R
I
G
sc
R
= 100
G
T
sc
4
0
0
0
9
10
11
12
V
13
14
15
16
2
4
6
8
10
(A)
12
14
16
(V)
I
GE
F
Fig. 23 - VGE vs. Short Circuit Time
CC = 400V; TC = 150°C
Fig. 22 - Typ. Diode ERR vs. IF
V
TJ = 175°C
6
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
November 14, 2014
IRGP6650DPbF/IRGP6650D-EPbF
16
10000
1000
100
10
14
12
10
8
V
V
= 400V
= 300V
CES
CES
Cies
Coes
Cres
6
4
2
0
1
0
20
40
60
80
0
100
200
300
400
500
600
Q
, Total Gate Charge (nC)
V
(V)
G
CE
Fig. 25 - Typical Gate Charge vs. VGE
CE = 35A
Fig. 24 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
I
70
60
50
40
30
20
10
D=0.1
D=0.2
D=0.4
0
100
125
150
175
Case Temperature (°C)
Fig 26. Maximum Diode Repetitive Forward Peak Current vs. Case Temperature
1
0.1
D = 0.50
0.20
0.10
0.05
Ri (°C/W)
0.03980
0.10562
0.20665
0.13624
i (sec)
0.000061
0.000090
0.002600
0.015477
R1
R1
R2
R2
R3
R3
R4
R4
0.02
0.01
0.01
J J
CC
1 1
2 2
3 3
4 4
Ci= iRi
Ci= iRi
0.001
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
( THERMAL RESPONSE )
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
© 2014 International Rectifier Submit Datasheet Feedback
7
www.irf.com
November 14, 2014
IRGP6650DPbF/IRGP6650D-EPbF
10
1
D = 0.50
0.20
0.10
0.05
Ri (°C/W)
0.11659
1.13634
1.43445
0.66410
i (sec)
0.000047
0.000298
0.002865
0.026578
R1
R1
R2
R2
R3
R3
R4
R4
0.1
0.02
0.01
J J
CC
1 1
2 2
3 3
4 4
Ci= iRi
Ci= iRi
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 28 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
8
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
November 14, 2014
IRGP6650DPbF/IRGP6650D-EPbF
L
L
80 V
+
-
VCC
DUT
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
DUT
VCC
-5V
DUT /
VCC
DRIVER
Rg
RSH
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
100K
R = VCC
ICM
D1 22K
C sense
VCC
DUT
DUT
G force
0.0075µF
Rg
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
www.irf.com © 2014 International Rectifier
Fig.C.T.6 - BVCES Filter Circuit
Submit Datasheet Feedback November 14, 2014
9
IRGP6650DPbF/IRGP6650D-EPbF
600
500
400
300
200
100
0
60
50
40
30
20
10
0
600
500
400
300
200
100
0
60
50
40
30
20
10
0
tf
tr
TEST
CURRENT
90% ICE
90% ICE
10% VCE
10% ICE
10%ICE
10% VCE
Eon Loss
0.4
Eoff Loss
-100
-10
-100
-10
-0.2
0
0.2
0.6
0.8
-0.2
0
0.2
0.4
0.6
0.8
time (µs)
time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 175°C using Fig. CT.4
15
500
250
QRR
VCE
10
tRR
400
300
200
100
0
200
150
100
50
5
0
ICE
-5
Peak
IRR
-10
-15
-20
0
-100
-50
-0.20
0.00
0.20
0.40
0.60
-10.0 -7.5 -5.0 -2.5 0.0 2.5 5.0
time (µS)
Time (uS)
Fig. WF3 - Typ. Diode Recovery Waveform
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 150°C using Fig. CT.3
10
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
November 14, 2014
IRGP6650DPbF/IRGP6650D-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
IRFPE30
135H
57
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
56
DATE CODE
YEAR 1 = 2001
WEEK 35
ASSEMBLY
LOT CODE
Note: "P" in assembly line position
indicates "Lead-Free"
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
November 14, 2014
IRGP6650DPbF/IRGP6650D-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D -E
W IT H A S S E M B L Y
P A R T N U M B E R
IN T E R N A T IO N A L
L O T C O D E 5 6 5 7
R E C T IF IE R
L O G O
A S S E M B L E D O N W W 3 5 , 2 0 0 0
IN T H E A S S E M B L Y L IN E "H "
0 3 5 H
5 7
5 6
D A T E C O D E
Y E A R
W E E K 3 5
L IN E
0
=
2 0 0 0
A S S E M B L Y
L O T C O D E
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d -F re e "
H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
November 14, 2014
IRGP6650DPbF/IRGP6650D-EPbF
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F)††
TO-247AC
TO-247AD
N/A
Yes
Moisture Sensitivity Level
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
Added IFM Diode Maximum Forward Current = 140A with the note on page 1.
Removed note from switching losses test condition on page 2.
11/14/2014
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
13
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
November 14, 2014
相关型号：
IRGP8B120KD-E
Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
INFINEON
IRGPC20K-E
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
INFINEON
IRGPC20KD2-E
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明