IRGPC40F-EPBF [INFINEON]
Insulated Gate Bipolar Transistor, 49A I(C), 600V V(BR)CES, N-Channel, TO-247AD;
| 型号： | IRGPC40F-EPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 49A I(C), 600V V(BR)CES, N-Channel, TO-247AD 晶体 晶体管 双极性晶体管 栅 局域网 |
| 文件： | 总6页 (文件大小：221K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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PD - 9.693A
IRGPC40F
Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
VCES = 600V
V
CE(sat) ≤ 2.0V
G
@VGE = 15V, IC = 27A
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
600
V
IC @ TC = 25°C
49
27
IC @ TC = 100°C
A
ICM
200
ILM
Clamped Inductive Load Current
Gate-to-Emitter Voltage
200
VGE
±20
V
mJ
W
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
15
PD @ TC = 25°C
160
PD @ TC = 100°C Maximum Power Dissipation
65
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Min.
—
Typ.
—
Max.
0.77
—
Units
°C/W
RθJC
RθCS
RθJA
Wt
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
—
0.24
—
—
40
—
6 (0.21)
—
g (oz)
Revision 0
C-81
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IRGPC40F
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
600
20
—
—
—
—
—
—
V
V
∆V(BR)CES/∆TJ Temp. Coeff. of Breakdown Voltage
0.70
V/°C VGE = 0V, IC = 1.0mA
IC = 27A
VCE(on)
Collector-to-Emitter Saturation Voltage
—
1.7 2.0
VGE = 15V
—
2.2
1.9
—
—
—
V
IC = 49A
See Fig. 2, 5
—
IC = 27A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
3.0
—
5.5
—
∆VGE(th)/∆TJ Temp. Coeff. of Threshold Voltage
-12
12
—
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
9.2
—
—
S
VCE = 100V, IC = 27A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
250
1000
µA
—
—
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
IGES
Gate-to-Emitter Leakage Current
—
—
±100 nA
Switching Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Min. Typ. Max. Units
Conditions
Qg
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
59
8.6
25
25
37
80
10
42
—
—
IC = 27A
Qge
Qgc
td(on)
tr
nC
ns
VCC = 400V
VGE = 15V
TJ = 25°C
See Fig. 8
IC = 27A, VCC = 480V
VGE = 15V, RG = 10Ω
Energy losses include "tail"
td(off)
tf
Turn-Off Delay Time
Fall Time
240 410
230 420
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.65
3.0
—
—
mJ See Fig. 9, 10, 11, 14
TJ = 150°C,
3.65 6.0
td(on)
tr
td(off)
tf
28
37
—
—
—
—
—
—
—
—
—
ns
IC = 27A, VCC = 480V
VGE = 15V, RG = 10Ω
Energy losses include "tail"
Turn-Off Delay Time
Fall Time
380
460
6.0
13
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ See Fig. 10, 14
LE
nH
Measured 5mm from package
Cies
Coes
Cres
1500
190
20
VGE = 0V
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Notes:
Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
Pulse width 5.0µs,
single shot.
Repetitive rating; pulse width limited
by maximum junction temperature.
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 10Ω, ( See fig. 13a )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-82
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IRGPC40F
60
For both:
Triangular wave:
Duty cycle: 50%
T
T
= 125°C
J
= 90°C
sin k
G ate drive as specified
Power Dissipation = 35W
Clam p voltage:
80% of rated
40
Sq uare wave:
60% of rated
voltage
20
Id eal diodes
0
0.1
1
10
100
f, Frequency (kH z)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK
)
1000
100
10
1000
100
T
= 25°C
J
T
= 150°C
J
10
1
T
= 150°C
J
T
= 25°C
J
0.1
0.01
V
= 15V
V
= 100V
CC
G E
20µs PULSE W IDTH
5µs PULSE W IDTH
1
0.1
1
10
5
10
15 20
V
, G ate-to-E m itter Voltage (V )
VC E , Collector-to-Emitter Voltage (V)
GE
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-83
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IRGPC40F
3.0
2.5
2.0
1.5
1.0
50
40
30
20
10
0
V
= 15V
V
= 15V
G E
G E
80µs P ULSE W IDTH
I
= 54A
C
I
= 27A
= 14A
C
C
I
-60 -40 -20
0
20
40
60
8 0 1 00 120 140 160
25
50
75
100
125
150
TC , Case Temperature (°C)
TC , Case Temperature (°C)
Fig. 5 - Collector-to-Emitter Voltage vs.
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Case Temperature
1
D = 0.50
0.20
0.1
0.10
P
DM
0.05
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
0.02
0.01
N otes:
1 . D uty factor D
=
t
/ t
2
1
2. Pea k T = P
x Z
+ T
C
D M
J
thJC
1
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
C-84
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IRGPC40F
3000
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
V
I
= 400V
= 27A
GE
ies
res
oes
CE
C
= C + C
,
C
SHORTED
ge
gc
gc
ce
= C
2500
2000
1500
1000
500
= C + C
ce
gc
C
ies
C
oes
4
C
res
0
0
1
10
100
0
10
20
30
40
50
60
VC E , Collector-to-Emitter Voltage (V)
Q g , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
100
4.8
4.7
4.6
4.5
4.4
4.3
R
V
V
= 10 Ω
= 15V
= 480V
V
V
T
I
= 480V
= 15V
= 25°C
= 27A
G
GE
CC
CC
G E
C
C
I
= 54A
= 27A
C
C
10
I
I
= 14A
C
1
0
10
20
30
40
50
60
-60 -40 -20
0
20
40
60
80 100 120 140 160
T , Case Temperature (°C)
R G , Gate Resistance (
Ω )
C
W
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Case Temperature
C-85
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IRGPC40F
20
1000
100
10
Ω
= 10
R
T
V
V
G
V
T
= 20V
= 125°C
G E
J
= 150°C
= 480V
= 15V
C
CC
G E
16
12
8
SAFE OPE RA TING ARE A
4
0
1
0
20
40
60
1
10
100
1000
I
, Collector-to-E mitter Current (A)
V
, Collector-to-Em itter Voltage (V)
C E
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
Refer to Section D for the following:
Appendix C: Section D - page D-5
Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform
Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) Section D - page D-13
C-86
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