IRH9130 [INFINEON]

RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AA); 抗辐射功率MOSFET直通孔( T0-204AA )
IRH9130
型号: IRH9130
厂家: Infineon    Infineon
描述:

RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AA)
抗辐射功率MOSFET直通孔( T0-204AA )

文件: 总8页 (文件大小:121K)
中文:  中文翻译
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PD - 90880C  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (T0-204AA)  
IRH9130  
100V, P-CHANNEL  
RADHard HEXFET TECHNOLOGY  
®
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRH9130  
IRH93130  
100K Rads (Si)  
300K Rads (Si)  
0.3Ω  
0.3Ω  
-11A  
-11A  
International Rectifier’s RADHard HEXFET® technol-  
ogy provides high performance power MOSFETs for  
space applications. This technology has over a de-  
cade of proven performance and reliability in satellite  
applications. These devices have been character-  
ized for bothTotal Dose and Single Event Effects (SEE).  
The combination of low Rdson and low gate charge  
reduces the power losses in switching applications  
such as DC to DC converters and motor control. These  
devices retain all of the well established advantages  
of MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of elec-  
trical parameters.  
TO-204AA  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= -12V, T = 25°C Continuous Drain Current  
-11  
D
D
GS  
GS  
C
A
I
= -12V, T = 100°C Continuous Drain Current  
-7.0  
-44  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
75  
W
W/°C  
V
D
C
0.6  
V
Gate-to-Source Voltage  
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
190  
mJ  
A
AS  
I
-11  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
-10  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
300 ( 0.063 in.(1.6mm) from case for 10s)  
11.5 (Typical )  
Lead Temperature  
Weight  
For footnotes refer to the last page  
www.irf.com  
1
02/18/03  
IRH9130  
Pre-Irradiation  
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)  
Parameter  
Min Typ Max Units  
Test Conditions  
BV  
Drain-to-Source Breakdown Voltage  
-100  
V
V
= 0V, I = -1.0mA  
D
DSS  
GS  
V/°C Reference to 25°C, I = -1.0mA  
BV  
/T Temperature Coefficient of Breakdown  
-0.1  
DSS  
J
D
Voltage  
R
V
Static Drain-to-Source On-State  
Resistance  
0.3  
0.325  
-4.0  
V
= -12V, I = -7.0A  
GS D  
DS(on)  
V
= -12V, I = -11A  
GS  
D
Gate Threshold Voltage  
Forward Transconductance  
Zero Gate Voltage Drain Current  
-2.0  
2.5  
V
V
DS  
= V , I = -1.0mA  
GS(th)  
fs  
GS  
D
g
S ( )  
V
> -15V, I  
= -7.0A ➀  
DS  
V
DS  
I
-25  
= -80V ,V =0V  
GS  
DSS  
DS  
GS  
µA  
-250  
V
= -80V,  
DS  
= 0V, T = 125°C  
V
J
I
I
Gate-to-Source Leakage Forward  
Gate-to-Source Leakage Reverse  
Total Gate Charge  
10  
-100  
100  
45  
V
= -20V  
GSS  
GSS  
GS  
nA  
nC  
V
= 20V  
GS  
Q
Q
Q
V
=-12V, I = -11A  
g
gs  
gd  
d(on)  
r
GS  
D
Gate-to-Source Charge  
Gate-to-Drain (‘Miller’) Charge  
Turn-On Delay Time  
Rise Time  
10  
V
= -50V  
DS  
25  
30  
t
t
t
t
V
=-50V, I = -11A  
DD D  
V =-12V, R = 7.5Ω  
GS  
50  
G
ns  
Turn-Off Delay Time  
Fall Time  
70  
d(off)  
f
70  
L
+ L  
Total Inductance  
Measured from Drain lead (6mm /0.25in from  
package) to Source lead (6mm /0.25in. from  
Package) with Source wires internally  
bonded from Source Pin to Drain Pad  
S
D
nH  
C
Input Capacitance  
1200  
300  
74  
V
= 0V, V  
= -25V  
f = 1.0MHz  
iss  
GS DS  
C
Output Capacitance  
pF  
oss  
rss  
C
Reverse Transfer Capacitance  
Source-Drain Diode Ratings and Characteristics  
Parameter  
Min Typ Max Units  
Test Conditions  
I
I
Continuous Source Current (Body Diode)  
Pulse Source Current (Body Diode) ➀  
Diode Forward Voltage  
-11  
-44  
-3.0  
250  
S
A
SM  
V
V
T = 25°C, I = -11A, V  
= 0V ➀  
j
SD  
S
GS  
t
Q
Reverse Recovery Time  
Reverse Recovery Charge  
nS  
T = 25°C, I = -11A, di/dt -100A/µs  
j
rr  
RR  
F
0.84 µC  
V
DD  
-50V ➀  
t
on  
Forward Turn-On Time  
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .  
S D  
Thermal Resistance  
Parameter  
Min Typ Max Units  
Test Conditions  
R
thJC  
R
thJA  
R
thCS  
Junction-to-Case  
Junction-to-Ambient  
Case-to-Sink  
1.67  
30  
°C/W  
Typical socket mount  
0.12  
Note: Corresponding Spice and Saber models are available on the G&S Website.  
For footnotes refer to the last page  
2
www.irf.com  
Radiation Characteristics  
IRH9130  
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.  
The hardness assurance program at International Rectifier is comprised of two radiation environments.  
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both  
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test  
conditions in order to provide a direct comparison.  
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀  
Parameter  
100KRads(Si)1  
300K Rads (Si)2  
Units  
Test Conditions  
Min  
Max  
Min  
Max  
BV  
Drain-to-Source Breakdown Voltage  
Gate Threshold Voltage  
-100  
-2.0  
-100  
-2.0  
V
= 0V, I = -1.0mA  
GS D  
DSS  
V
V
-4.0  
-100  
100  
-25  
-5.0  
-100  
100  
-25  
V
= V , I = -1.0mA  
GS  
DS D  
GS(th)  
I
I
I
Gate-to-Source Leakage Forward  
Gate-to-Source Leakage Reverse  
Zero Gate Voltage Drain Current  
V
= -20V  
= 20 V  
GSS  
GSS  
DSS  
GS  
GS  
nA  
V
µA  
V
=-80V, V =0V  
DS GS  
R
Static Drain-to-Source  
On-State Resistance  
Diode Forward Voltage  
0.3  
0.3  
V
= -12V, I =-7A  
D
GS  
GS  
DS(on)  
V
SD  
-3.0  
-3.0  
V
V
= 0V, I = -11A  
S
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for  
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.  
Table 2. Single Event Effect Safe Operating Area  
VDS(V)  
LET  
MeV/(mg/cm²))  
Energy Range  
Ion  
(MeV)  
(µm)  
@VGS=0V  
-100  
@VGS=5V @VGS=10V @VGS=15V @VGS=20V  
Cu  
Br  
I
28  
285  
305  
345  
43  
39  
-100  
-100  
-100  
-70  
-70  
-50  
-60  
-40  
36.8  
59.9  
-100  
32.8  
-60  
-120  
-100  
-80  
-60  
-40  
-20  
0
Cu  
Br  
I
0
5
10  
15  
20  
VGS  
Fig a. Single Event Effect, Safe Operating Area  
For footnotes refer to the last page  
www.irf.com  
3
IRH9130  
Pre-Irradiation  
100  
10  
1
100  
VGS  
-15V  
-12V  
-10V  
-9.0V  
-8.0V  
-7.0V  
-6.0V  
VGS  
-15V  
-12V  
-10V  
-9.0V  
-8.0V  
-7.0V  
-6.0V  
TOP  
TOP  
BOTTOM -5.0V  
BOTTOM -5.0V  
10  
-5.0V  
-5.0V  
20µs PULSE WIDTH  
20µs PULSE WIDTH  
°
°
T = 150 C  
J
T = 25 C  
J
1
0.1  
0.1  
1
10  
100  
1
10  
100  
-V , Drain-to-Source Voltage (V)  
DS  
-V , Drain-to-Source Voltage (V)  
DS  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
2.5  
100  
10  
1
-11A  
=
I
D
2.0  
°
T = 25 C  
J
°
T = 150 C  
J
1.5  
1.0  
0.5  
0.0  
V
= -50V  
DS  
20µs PULSE WIDTH  
V
= -12V  
GS  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
°
5
6
7
8
9
10 11 12  
13  
T , Junction Temperature ( C)  
J
-V , Gate-to-Source Voltage (V)  
GS  
Fig 3. Typical Transfer Characteristics  
Fig 4. Normalized On-Resistance  
Vs.Temperature  
4
www.irf.com  
Pre-Irradiation  
IRH9130  
20  
16  
12  
8
2000  
1600  
1200  
800  
I = -11A  
D
V
= 0V,  
f = 1MHz  
C
GS  
V
V
V
= 80V  
= 50V  
= 20V  
DS  
DS  
DS  
C
= C + C  
SHORTED  
ds  
iss  
gs  
gd ,  
gd  
C
= C  
gd  
rss  
C
= C + C  
ds  
oss  
C
iss  
C
oss  
400  
4
C
FOR TEST CIRCUIT  
SEE FIGURE 13  
rss  
0
1
0
10  
100  
0
10  
20  
30  
40  
50  
60  
-V , Drain-to-Source Voltage (V)  
DS  
Q
, Total Gate Charge (nC)  
G
Fig 6. Typical Gate Charge Vs.  
Fig 5. Typical Capacitance Vs.  
Gate-to-SourceVoltage  
Drain-to-SourceVoltage  
100  
10  
1
1000  
100  
10  
OPERATION IN THIS AREA LIMITED  
BY R  
DS(on)  
°
T = 150 C  
J
°
T = 25 C  
J
100us  
1ms  
°
T = 25 C  
C
°
T = 150 C  
Single Pulse  
J
V
= 0 V  
10ms  
100  
GS  
4.0  
0.1  
0.0  
1
1.0  
2.0  
3.0  
5.0  
1
10  
1000  
-V ,Source-to-Drain Voltage (V)  
SD  
-V , Drain-to-Source Voltage (V)  
DS  
Fig 8. Maximum Safe Operating Area  
Fig 7. Typical Source-Drain Diode  
ForwardVoltage  
www.irf.com  
5
IRH9130  
Pre-Irradiation  
12  
10  
8
RD  
VDS  
VGS  
D.U.T.  
RG  
-
+
VDD  
VGS  
6
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1 %  
4
Fig 10a. Switching Time Test Circuit  
2
t
t
r
t
t
f
d(on)  
d(off)  
V
GS  
10%  
0
25  
50  
T
75  
100  
125  
°
150  
, Case Temperature ( C)  
C
90%  
V
DS  
Fig 9. Maximum Drain Current Vs.  
CaseTemperature  
Fig 10b. Switching Time Waveforms  
10  
1
D = 0.50  
0.20  
0.10  
0.05  
0.02  
P
DM  
0.1  
t
1
SINGLE PULSE  
0.01  
t
(THERMAL RESPONSE)  
2
Notes:  
1. Duty factor D =t / t  
1
2
2. Peak T =P  
x Z + T  
thJC C  
J
DM  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t , Rectangular Pulse Duration (sec)  
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case  
6
www.irf.com  
Pre-Irradiation  
IRH9130  
400  
300  
200  
100  
0
L
I
V
D
D S  
TOP  
-4.9A  
-7.0A  
BOTTOM -11A  
D .U .T  
R
G
V
D D  
A
I
A S  
D R IV E R  
-
VGS
0.01  
t
p
15V  
Fig 12a. Unclamped Inductive Test Circuit  
25  
50  
75  
100  
125  
150  
I
°
AS  
Starting T , Junction Temperature ( C)  
J
Fig 12c. Maximum Avalanche Energy  
Vs. DrainCurrent  
t
p
V
(BR)DSS  
Fig12b. UnclampedInductiveWaveforms  
Current Regulator  
Same Type as D.U.T.  
50KΩ  
Q
G
.2µF  
12V  
.3µF  
-12 V  
-
Q
Q
GD  
GS  
V
+
DS  
D.U.T.  
V
GS  
V
G
-3mA  
I
I
D
G
Charge  
Current Sampling Resistors  
Fig 13b. Gate Charge Test Circuit  
Fig 13a. Basic Gate Charge Waveform  
www.irf.com  
7
IRH9130  
Pre-Irradiation  
Foot Notes:  
Pulse width 300 µs; Duty Cycle 2%  
Total Dose Irradiation with V Bias.  
Repetitive Rating; Pulse width limited by  
maximum junction temperature.  
GS  
= 0 during  
-12 volt V  
applied and V  
V  
= -25V, starting T = 25°C, L=3.1mH  
GS  
irradiation per MIL-STD-750, method 1019, condition A.  
DS  
DD  
J
Peak I = -11A, V  
=-12V  
GS  
L
Total Dose Irradiation with V Bias.  
I  
-11A, di/dt -480A/µs,  
DS  
= 0 during  
SD  
DD  
-80 volt V  
applied and V  
V
-100V, T 150°C  
DS  
irradiation per MlL-STD-750, method 1019, condition A.  
GS  
J
Case Outline and Dimensions — TO-204AA  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information.  
Data and specifications subject to change without notice. 02/03  
8
www.irf.com  

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