IRHF93230 [INFINEON]

RADIATION HARDENED POWER MOSFET; 抗辐射功率MOSFET


型号：	IRHF93230
厂家：	Infineon
描述：	RADIATION HARDENED POWER MOSFET 抗辐射功率MOSFET 晶体晶体管功率场效应晶体管开关脉冲
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PD - 91312E

IRHF9230

JANSR2N7390

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-39)

200V, P-CHANNEL

REF: MIL-PRF-19500/630

RAD-Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHF9230

100K Rads (Si)

0.80Ω

-4.0A

JANSR2N7390

IRHF93230 300K Rads (Si)

-4.0A

JANSF2N7390

International Rectifier’s RAD-Hard HEXFET^TMtechnol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for bothTotal Dose and Single Event Effects (SEE).

The combination of low Rds(on) and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

TO-39

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

LowTotal Gate Charge

ProtonTolerant

SimpleDriveRequirements

EaseofParalleling

Hermetically Sealed

Ceramic Package

LightWeight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= -12V, T = 25°C Continuous Drain Current

-4.0

-2.4

= -12V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

-16

@ T = 25°C

W/°C

Linear Derating Factor

0.2

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

171

-4.0

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

2.5

V/ns

dv/dt

-27

-55 to 150

^oC

Storage Temperature Range

STG

Lead Temperature

Weight

300 ( 0.063 in. (1.6mm) from case for 10s)

0.98 (typical)

For footnotes refer to the last page

www.irf.com

2/18/03

IRHF9230

Pre-Irradiation

Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

Drain-to-Source Breakdown Voltage

-200

—

= 0V, I =-1.0mA

DSS

V/°C Reference to 25°C, I = -1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

-0.25

DSS

Voltage

Static Drain-to-Source On-State

Resistance

—

0.80

0.92

-4.0

—

= -12V, I = -2.4A➀

DS(on)

Ω

= -12V, I = -4.0A➀

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

-2.0

2.5

—

= V , I = -1.0mA

GS(th)

Ω

S ( )

>-15V, I

= -4.0A ➀

-25

= -160V ,V =0V

DS GS

DSS

µA

—

-250

= -160V,

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

—

7.0

-100

100

= -20V

GSS

= 20V

GSS

=-12V, I = -4.0A

d(on)

= -100V

= -100V, I = -4.0A,

=-12V, R = 7.5Ω

GS G

Turn-Off Delay Time

FallTime

Total Inductance

d(off)

—

+ L

Measured from drain lead (6mm/0.25in. from

package) to source lead (6mm/0.25in. from

package)

Input Capacitance

—

1200

190

—

= 0V, V

= -25V

f = 1.0MHz

iss

GS DS

Output Capacitance

Reverse Transfer Capacitance

oss

rss

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

—

-4.0

-16

Pulse Source Current (Body Diode) ➀

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

-5.0

400

1.6

T = 25°C, I = -4.0A, V

= 0V ➀

µC

T = 25°C, I = -4.0A, di/dt ≤ -100A/µs

≤ -100V ➀

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

Junction-to-Case

Junction-to-Ambient

—

5.0

175

thJC

thJA

°C/W

Typical socket mount

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

www.irf.com

Radiation Characteristics

Pre-Irradiation

IRHF9230

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀

Parameter

100KRads(Si)¹

300K Rads (Si)²

Units

Test Conditions

Min

Max

Min

Max

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

-200

-2.0

—

-4.0

-100

100

-25

-200

-2.0

—

-5.0

-100

100

-25

= 0V, I = -1.0mA

DSS

GS D

= V , I = -1.0mA

DS D

GS(th)

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

= -20V

= 20 V

GSS

—

GSS

—

µA

=-160V, V =0V

= -12V, I =-2.4A

DSS

DS(on)

Static Drain-to-Source

On-State Resistance (TO-3)

Static Drain-to-Source

On-State Resistance (TO-39)

Diode Forward Voltage

➀

—

0.8

—

0.8

Ω

DS(on)

➀

—

0.8

—

0.8

Ω

= -12V, I =-2.4A

➀

-5.0

= 0V, I = -4.0A

GS S

1. Part number IRHF9230 (JANSR2N7390)

2. Part number IRHF93230 (JANSF2N7390)

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Single Event Effect Safe Operating Area

VDS(V)

LET

MeV/(mg/cm²))

Energy Range

Ion

(MeV)

(µm)

@VGS=0V

-200

@VGS=5V @VGS=10V @VGS=15V @VGS=20V

28.0

36.8

285

305

43.0

39.0

-200

-125

-200

-75

—

-200

-250

-200

-150

-100

-50

VGS

Fig a. Single Event Effect, Safe Operating Area

For footnotes refer to the last page

www.irf.com

IRHF9230

Pre-Irradiation

100

VGS

-15V

-12V

-10V

-9.0V

-8.0V

-7.0V

-6.0V

VGS

-15V

-12V

-10V

-9.0V

-8.0V

-7.0V

-6.0V

TOP

BOTTOM -5.0V

-5.0V

20µs PULSE WIDTH

T = 25 C

20µs PULSE WIDTH

T = 150 C

100

-V , Drain-to-Source Voltage (V)

Fig1. TypicalOutputCharacteristics

Fig2. TypicalOutputCharacteristics

100

2.5

-4.0A

2.0

1.5

1.0

0.5

0.0

T = 25 C

T = 150 C

= -50V

20µs PULSE WIDTH

=-12V

5.0

5.5

6.0

6.5

7.0 7.5

8.0

-60 -40 -20

20 40 60 80 100 120 140 160

-V , Gate-to-Source Voltage (V)

T , Junction Temperature( C)

Fig3. TypicalTransferCharacteristics

Fig4. NormalizedOn-Resistance

Vs.Temperature

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Pre-Irradiation

IRHF9230

2000

= 0V,

f = 1MHz

= -4.0A

= C + C

SHORTED

iss

gd ,

=-160V

=-100V

=-40V

= C

rss

= C + C

1600

1200

800

400

oss ds

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 13

100

-V , Drain-to-Source Voltage (V)

Q , Total Gate Charge (nC)

Fig6. TypicalGateChargeVs.

Fig5. TypicalCapacitanceVs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

10us

100us

T = 150 C

1ms

10ms

T = 25 C

T = 150 C

Single Pulse

= 0 V

0.1

0.5

100

1000

1.0

1.5

2.0

2.5

3.0

3.5

4.0

, Drain-to-Source Voltage (V)

-V ,Source-to-Drain Voltage (V)

Fig8. MaximumSafeOperatingArea

Fig7. TypicalSource-DrainDiode

ForwardVoltage

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IRHF9230

Pre-Irradiation

R_D

4.0

3.0

2.0

1.0

V_DS

V_GS

D.U.T.

R_G

V_DD

V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig10a. SwitchingTimeTestCircuit

d(on)

d(off)

10%

0.0

100

125

150

, Case Temperature ( C)

90%

Fig9. MaximumDrainCurrentVs.

CaseTemperature

Fig10b. SwitchingTimeWaveforms

0.50

0.20

0.10

0.05

0.02

0.01

0.1

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D =

t / t

1 2

2. Peak T =P

x Z

+ T

thJC

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case

www.irf.com

Pre-Irradiation

IRHF9230

D S

400

300

200

100

TOP

-1.8A

-2.5A

BOTTOM -4.0A

D .U .T

D D

A S

D R IV E R

-V20_GV_S

0.01

Ω

15V

Fig12a. UnclampedInductiveTestCircuit

100

125

150

Starting T , Junction Temperature ( C)

Fig12c. MaximumAvalancheEnergy

Vs.DrainCurrent

(BR)DSS

Fig12b. UnclampedInductiveWaveforms

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

-12V

12V

.3µF

-12V

D.U.T.

-3mA

Charge

Current Sampling Resistors

Fig13b. GateChargeTestCircuit

Fig13a. BasicGateChargeWaveform

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IRHF9230

Pre-Irradiation

Foot Notes:

➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

➀ Total Dose Irradiation with V Bias.

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

= 0 during

-12 volt V

applied and V

➀ V

= -50V, starting T = 25°C, L=21.4mH

irradiation per MIL-STD-750, method 1019, condition A.

Peak I = -4.0A, V

=-12V

➀ I

≤ -4.0A, di/dt ≤ -150A/µs,

➀ Total Dose Irradiation with V

Bias.

≤ -200V, T ≤ 150°C

-160 volt V

applied and V

= 0 during

irradiation per MlL-STD-750, method 1019, condition A.

Case Outline and Dimensions —TO-205AF(ModifiedTO-39)

LEGEND

1- SOURCE

2- GATE

3- DRAIN

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 02/03

www.irf.com

IRHF93230 [INFINEON]

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