IRHLF6930Z4 [INFINEON]
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE; 抗辐射的逻辑电平功率MOSFET直通孔
| 型号： | IRHLF6930Z4 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE |
| 文件： | 总8页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94685
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (TO-39)
IRHLF6970Z4
60V, P-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHLF6970Z4 100K Rads (Si) 1.2Ω
IRHLF6930Z4 300K Rads (Si) 1.2Ω
ID
-1.6A
-1.6A
International Rectifier’s R6TM Logic Level Power
Mosfets provide simple solution to interfacing CMOS
and TTL control circuits to power devices in space
and other radiation environments. The threshold
voltage remains within accptable operating limits
over the full operating temperature and post radia-
tion. This is achieved while maintaining single event
gate rupture and single event burnout immunity.
T0-39
Features:
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
These devices are used in applications such as cur-
rent boost low signal source in PWM, voltage com-
parator and operational amplifiers.
Hermetically Sealed
Light Weight
Complimentary N-Channel Available -
IRHLF670Z4
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= -4.5V, T = 25°C Continuous Drain Current
-1.6
D
GS
C
A
I
= -4.5V, T = 100°C Continuous Drain Current
-1.0
-6.4
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
DM
@ T = 25°C
P
5.0
W
W/°C
V
D
C
0.04
±10
V
GS
E
10
mJ
A
AS
I
-1.6
AR
E
AR
dv/dt
0.5
mJ
V/ns
-4.0
T
-55 to 150
J
T
Storage Temperature Range
Lead Temperature
oC
g
STG
300 (0.063in/1.6mm from case for 10s)
0.98 ( Typical )
Weight
For footnotes refer to the last page
www.irf.com
1
07/07/03
IRHLF6970Z4
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
-60
—
—
—
—
V
V
= 0V, I = -250µA
D
DSS
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
-0.06
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
1.2
Ω
V = -4.5V, I = -1.0A
GS D
DS(on)
➀
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
-1.0
1.0
—
—
—
—
—
-2.0
—
V
V
= V , I = -250µA
GS
GS(th)
fs
DS
D
Ω
g
S ( )
V
= -10V, I
= -1.0A ➀
DS
DS
I
-1.0
-10
V
= -48V ,V =0V
GS
DSS
DS
µA
—
V
= -48V,
DS
= 0V, T =125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
-100
100
4.0
1.5
1.8
18
V
= -10V
=10V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
= -5.0V, I = -1.6A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
V
= -30V
DS
t
t
t
t
V
DD
V
= -30V, I = -1.6A,
=-5.0V, R = 24Ω
GS G
D
20
ns
Turn-Off Delay Time
Fall Time
15
d(off)
f
25
L
+ L
Total Inductance
—
Measured from Drain lead (6mm /0.25in
from package) to Source lead(6mm/0.25in
from packge)with Source wire internally
bonded from Source pin to Drain pad
S
D
nH
C
C
C
Input Capacitance
—
—
—
—
177
40
—
—
—
—
V
= 0V, V
= -25V
f = 1.0MHz
iss
GS DS
Output Capacitance
pF
oss
rss
Reverse Transfer Capacitance
8.0
28
R
Ω
f = 5.0MHz, open drain
g
Gate Resistance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
-1.6
-6.4
-5.0
50
S
A
SM
V
t
V
T = 25°C, I = -1.6A, V
= 0V ➀
j
SD
S
GS
Reverse Recovery Time
ns
nC
T = 25°C, I =-1.6A, di/dt ≤ -100A/µs
j
rr
F
Q
Reverse Recovery Charge
50
V
DD
≤ -25V ➀
RR
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
25
°C/W
thJC
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHLF6970Z4
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀
Parameter
100K Rads(Si)1 300KRads(Si)2
Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
-60
-1.0
—
—
-60
-1.0
—
—
V
= 0V, I = -250µA
DSS
GS D
V
V
-2.0
-100
100
-1.0
1.2
-2.0
-100
100
-10
V
GS
= V , I = -250µA
GS(th)
DS
D
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
V
=-10V
= 10 V
GSS
GS
nA
—
—
V
GS
GSS
I
—
—
µA
V
=-48V, V =0V
DS GS
= -4.5V, I =-1.0A
GS
D
DSS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-39)
Diode Forward Voltage
➀
—
—
1.2
Ω
V
V
SD
➀
—
-5.0
—
-5.0
V
V
= 0V, I = -1.6A
GS S
1. Part number IRHLF6970Z4
2. Part number IRHLF6930Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy Range
VDS (V)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
(MeV/(mg/cm2)) (MeV)
(µm)
0V
-60
-60
-60
2V
-60
-60
-60
4V
-60
-60
-60
5V
-60
-60
-60
6V
-60
-60
-
7V
-50
-20
-
8V
-35
-
10V
Br
I
37.9
59.9
82.3
285
345
357
36.8
32.7
28.5
-25
-
-
Au
-
-70
-60
-50
-40
-30
-20
-10
0
Br
I
Au
0
2
4
6
8
10
12
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHLF6970Z4
Pre-Irradiation
10
10
VGS
-10V
VGS
-10V
TOP
TOP
-7.5V
-5.0V
-4.0V
-3.5V
-3.0V
-2.5V
-7.5V
-5.0V
-4.0V
-3.5V
-3.0V
-2.5V
BOTTOM -2.25V
BOTTOM -2.25V
1
1
2.25V
-
2.25V
-
µ
60 s PULSE WIDTH
Tj = 150°C
µ
60 s PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
-V
, Drain-to-Source Voltage (V)
-V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
10
-1.6A
=
I
D
T
= 25°C
J
T
= 150°C
J
1
V
= -25V
DS
µ
60 s PULSE WIDTH
V
= -4.5V
GS
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
1
2
3
4
5
6
7
8
T , Junction Temperature ( C)
J
-V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHLF6970Z4
250
12
10
8
V
= 0V,
f = 1MHz
C
GS
I
D
= -1.6A
V
V
V
=-48V
=-30V
=-12V
DS
DS
DS
C
= C + C
SHORTED
ds
iss
gs
gd ,
gd
C
= C
gd
rss
C
= C + C
200
150
100
50
oss ds
C
iss
6
4
C
oss
2
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
0
0
1
2
3
4
5
1
10
100
Q , Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
10
10
OPERATION IN THIS AREA LIMITED
BY RDS(on)
T
= 150°C
J
00µ
1
s
T
= 25°C
J
1
1
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
100
V
5
= 0V
GS
0.1
0.1
1
10
1000
0
1
2
3
4
6
7
-V
, Source-to-Drain Voltage (V)
-V
, Drain-to-Source Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
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5
IRHLF6970Z4
Pre-Irradiation
RD
1.6
1.3
1.0
0.6
0.3
0.0
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
t
t
f
d(on)
r
d(off)
V
GS
10%
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
90%
V
DS
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10
0.10
0.05
P
DM
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.1
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHLF6970Z4
L
25
20
15
10
5
V
D S
I
D
TOP
-0.7A
-1.0A
BOTTOM -1.6A
-
D .U .T
R
G
VDD
+
I
A
A S
D R IV E R
V
-20V
GS
0.01
Ω
t
p
15V
Fig 12a. Unclamped Inductive Test Circuit
0
I
AS
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
Q
G
.2µF
-12V
1
.3µF
-5.0V
-
Q
V
GS
GD
+
DS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHLF6970Z4
Footnotes:
Pre-Irradiation
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀ Total Dose Irradiation with V Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
-10 volt V
applied and V
➀ V
= - 25V, starting T = 25°C, L= 8.0mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = -1.6A, V
= -12V
L
GS
➀ Total Dose Irradiation with V
Bias.
➀ I
≤ -1.6A, di/dt ≤ -170A/µs,
DS
applied and V = 0 during
GS
SD
DD
-48 volt V
V
≤ - 60V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
J
Case Outline and Dimensions —TO-205AF (ModifiedTO-39)
LEGEND
1- SOURCE
2- GATE
3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 07/03
8
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