IRHLF740Z4 [INFINEON]
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39); 抗辐射的逻辑电平功率MOSFET直通孔( TO- 39 )型号: | IRHLF740Z4 |
厂家: | Infineon |
描述: | RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) |
文件: | 总8页 (文件大小:150K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 94695B
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (TO-39)
IRHLF770Z4
60V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHLF770Z4 100K Rads (Si)
IRHLF730Z4 300K Rads (Si)
IRHLF740Z4 600K Rads (Si)
0.5Ω
0.5Ω
0.5Ω
1.6A*
1.6A*
1.6A*
1.6A*
IRHLF780Z4 1000K Rads (Si) 0.5Ω
T0-39
International Rectifier’s R7TM Logic Level Power
Mosfets provide simple solution to interfacing CMOS
and TTL control circuits to power devices in space
and other radiation environments. The threshold
voltage remains within accptable operating limits
over the full operating temperature and post radiation.
This is achieved while maintaining single event gate
rupture and single event burnout immunity.
Features:
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Complimentary P-Channel Available -
IRHLF7970Z4
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Pre-Irradiation
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 4.5V, T = 25°C Continuous Drain Current
1.6*
D
GS
C
A
I
D
= 4.5V, T = 100°C Continuous Drain Current
1.0*
6.4
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
DM
@ T = 25°C
P
5.0
W
W/°C
V
D
C
Linear Derating Factor
0.04
±10
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
9.0
mJ
A
AS
I
1.6
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
0.5
mJ
V/ns
AR
dv/dt
3.5
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Lead Temperature
Weight
300 (0.063in/1.6mm from case for 10s)
0.98 (Typical)
* Derated to match the Complimentary P-Channel Logic Level Power Mosfet -IRHLF7970Z4
For footnotes refer to the last page
www.irf.com
1
04/07/04
IRHLF770Z4
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
60
—
—
—
—
V
V
= 0V, I = 250µA
D
GS
Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.08
V/°C
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.50
Ω
V
= 4.5V, I = 1.0A
GS D
DS(on)
➀
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
1.0
1.1
—
—
—
—
—
2.0
—
V
V
V
= V , I = 250µA
GS(th)
fs
DS
V
GS
D
Ω
g
S ( )
= 10V, I
= 1.0A ➀
DS
DS
I
1.0
10
= 48V ,V = 0V
DSS
DS
GS
GS
µA
—
V
= 48V,
DS
= 0V, T =125°C
V
V
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
100
-100
3.6
1.5
1.8
8.0
20
V
= 10V
GSS
GSS
GS
nA
nC
V
= -10V
GS
Q
Q
Q
= 4.5V, I = 1.6A
g
gs
gd
d(on)
r
GS
D
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
V
= 30V
DS
t
t
t
t
V
DD
V
= 30V, I = 1.6A,
D
= 4.5V, R = 24Ω
GS
G
ns
20
d(off)
f
15
L
S
+ L
Total Inductance
—
Measured from Drain lead (6mm /0.25in
from package) to Source lead(6mm/0.25in
from packge)with Source wire internally
bonded from Source pin to Drain pad
D
nH
C
C
C
Input Capacitance
—
—
—
—
152
39
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
Output Capacitance
pF
oss
rss
Reverse Transfer Capacitance
1.6
14
—
R
—
Ω
f = 5.0MHz, open drain
g
Gate Resistance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
1.6*
6.4
1.2
S
A
SM
SD
V
T = 25°C, I = 1.6A, V
= 0V ➀
j
S
GS
Reverse Recovery Time
100
150
ns
nC
T = 25°C, I = 1.6A, di/dt ≤ 100A/µs
j
rr
F
Q
Reverse Recovery Charge
V
≤ 25V ➀
RR
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
* Derated to match the Complimentary P-Channel Logic Level Power Mosfet -IRHLF7970Z4
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
25
°C/W
thJC
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHLF770Z4
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀
1
Parameter
Up to 600K Rads(Si) 1000K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
60
1.0
—
—
2.0
100
-100
1.0
60
1.0
—
—
2.0
100
-100
10
V
= 0V, I = 250µA
GS D
DSS
V
V
V = V , I = 250µA
GS
DS D
GS(th)
I
V
GS
= 10V
GSS
nA
I
—
—
V
= -10 V
GS
GSS
I
—
—
µA
V
= 48V, V =0V
DS GS
DSS
R
Static Drain-to-Source
On-State Resistance (TO-39)
Diode Forward Voltage
➀
—
0.5
—
0.5
Ω
V
= 4.5V, I = 1.0A
D
GS
DS(on)
V
➀
—
1.2
—
1.2
V
V
= 0V, I = 1.6A
S
SD
GS
1. Part numbers IRHLF770Z4, IRHLF730Z4 and IRHLF740Z4
2. Part number IRHLF780Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2.Single Event Effect Safe Operating Area
Ion
LET
Energy Range
VDS (V)
(MeV/(mg/cm2)) (MeV)
(µm) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V
60
60
60
-2V
60
60
60
-4V
60
60
60
-5V
60
60
60
-6V
60
60
-
-7V
35
20
-
-8V
30
15
-
-10V
Br
I
37.3
59.9
82.3
285
345
357
36.8
32.7
357
20
-
Au
-
70
60
50
40
30
20
10
0
Br
I
Au
0
-2
-4
-6
VGS
-8
-10
-12
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHLF770Z4
Pre-Irradiation
10
10
VGS
VGS
7.5V
TOP
7.5V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
TOP
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.25V
BOTTOM 2.25V
1
1
2.25V
2.25V
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
10
1.6A
=
I
D
T
= 150°C
J
T
= 25°C
J
1
V
= 25V
DS
60µs PULSE WIDTH
V
= 4.5V
GS
0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
2
2.5
3
3.5
4
4.5
5
T , Junction Temperature( C)
J
V
GS
, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
www.irf.com
Pre-Irradiation
IRHLF770Z4
12
10
8
250
I
D
= 1.6A
V
= 0V,
f = 1MHz
gd , ds
V
V
V
= 48V
= 30V
= 12V
GS
DS
DS
DS
C
= C + C
C
SHORTED
iss
gs
C
= C
gd
rss
C
= C + C
200
150
100
50
oss
ds
gd
C
iss
C
oss
6
4
2
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
0
1
2
3
4
5
1
10
100
Q
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
10
10
OPERATION IN THIS AREA LIMITED
BY RDS(on)
T
= 150°C
100µs
= 25°C
T
J
J
1
1
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
V
GS
= 0V
10ms
0.1
0.1
1.0
10
100
1000
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
, Source-to-Drain Voltage (V)
SD
V
DS
, Drain-toSource Voltage (V)
V
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
www.irf.com
5
IRHLF770Z4
Pre-Irradiation
RD
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
10
0.20
0.10
0.05
0.02
P
DM
1
SINGLE PULSE
(THERMAL RESPONSE)
0.01
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x
Z
+ T
C
J
DM
thJC
0.1
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
www.irf.com
Pre-Irradiation
IRHLF770Z4
20
16
12
8
I
D
TOP
0.7A
1.0A
BOTTOM 1.6A
15V
DRIVER
L
V
D S
D.U.T
.
R
G
+
V
D
-
I
AS
2VGS
0.01
Ω
t
p
4
Fig 12a. Unclamped Inductive Test Circuit
0
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
V
(BR )D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
4.5V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
www.irf.com
7
IRHLF770Z4
Footnotes:
Pre-Irradiation
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀ Total Dose Irradiation with V Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
10 volt V
applied and V
➀ V
= 25V, starting T = 25°C, L= 7.0 mH
GS
DS
DD
J
irradiation per MIL-STD-750, method 1019, condition A.
Peak I = 1.6A, V
= 10V
GS
L
➀ Total Dose Irradiation with V Bias.
➀ I
≤ 1.6A, di/dt ≤ 92A/µs,
DS
= 0 during
SD
DD
48 volt V
applied and V
GS
V
≤ 60V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
J
Case Outline and Dimensions —TO-205AF (ModifiedTO-39)
LEGEND
1- SOURCE
2- GATE
3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/2004
8
www.irf.com
相关型号:
IRHLF770Z4SCS
Rad hard, 60V, 1.6A, single, N-channel MOSFET, R7 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, QIRL
INFINEON
IRHLF7930Z4SCS
Small Signal Field-Effect Transistor, 1.5A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, MODIFIED TO-39, 3 PIN
INFINEON
IRHLF7970Z4PBF
Small Signal Field-Effect Transistor, 1.5A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN
INFINEON
IRHLF7970Z4SCS
Rad hard, -60V, -1.6A, single, P-channel MOSFET, R7 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, QIRL
INFINEON
©2020 ICPDF网 联系我们和版权申明