IRHLNA797064SCV [INFINEON]
Rad hard, -60V, -56A, single, P-channel MOSFET, R7 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QIRL;
| 型号： | IRHLNA797064SCV |
| 厂家： | 
Infineon |
| 描述： | Rad hard, -60V, -56A, single, P-channel MOSFET, R7 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QIRL |
| 文件： | 总9页 (文件大小：844K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-97174C
2N7622U2
IRHLNA797064
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE-MOUNT (SMD-2)
60V, P-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHLNA797064 100 kRads(Si)
-56A*
-56A*
0.017
0.017
IRHLNA793064
300 kRads(Si)
Description
IR HiRel R7 Logic Level Power MOSFETs provide simple
solution to interfacing CMOS and TTL control circuits to
power devices in space and other radiation environments.
The threshold voltage remains within acceptable operating
limits over the full operating temperature and post
radiation. This is achieved while maintaining single event
gate rupture and single event burnout immunity.
Features
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
ESD Rating: Class 3B per MIL-STD-750, Method 1020
The device is ideal when used to interface directly with
most logic gates, linear IC’s, micro-controllers, and other
device types that operate from a 3.3-5V source. It may
also be used to increase the output current of a PWM,
voltage comparator or an operational amplifier where the
logic level drive signal is available.
Absolute Maximum Ratings
Pre-Irradiation
Symbol
Value
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Units
ID1 @ VGS = 4.5V, TC = 25°C
ID2 @ VGS = 4.5V, TC = 100°C
IDM @TC = 25°C
-56*
A
-56*
-224
W
W/°C
V
PD @TC = 25°C
250
Linear Derating Factor
1.67
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
VGS
EAS
IAR
±10
1060
-56
mJ
A
mJ
V/ns
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Package Mounting Surface Temp.
Weight
EAR
dv/dt
TJ
25
-3.7
-55 to +150
TSTG
°C
g
300 (for 5s)
3.3 (Typical)
*Current is limited by package
For footnotes refer to the page 2.
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2019-04-23
International Rectifier HiRel Products, Inc.
2N7622U2
IRHLNA797064
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol
BVDSS
Parameter
Min. Typ. Max. Units
-60 ––– –––
Test Conditions
VGS = 0V, ID = -250µA
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
BVDSS/TJ
RDS(on)
––– -0.06 –––
––– ––– 0.017
-1.0 ––– -2.0
V/°C Reference to 25°C, ID = -1.0mA
VGS = -4.5V, ID2 = -56A
VDS = VGS, ID = -250µA
V
VGS(th)
VGS(th)/TJ
gfs
Gate Threshold Voltage Coefficient
Forward Transconductance
–––
65
4.1
––– –––
––– mV/°C
S
VDS = -15V, ID2 = -56A
IDSS
––– ––– -1.0
––– ––– -25
––– ––– -100
––– ––– 100
––– ––– 130
V
DS = -48V, VGS = 0V
Zero Gate Voltage Drain Current
µA
VDS = -48V,VGS = 0V,TJ =125°C
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
VGS = -10V
GS = 10V
nA
nC
V
QG
QGS
QGD
td(on)
tr
ID1 = -56A
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
––– –––
––– –––
––– –––
35
55
38
VDS = -30V
VGS = -4.5V
VDD = -30V
ID1 = -56A
––– ––– 265
––– ––– 210
ns
td(off)
tf
RG = 2.35
VGS = -4.5V
––– –––
70
Measured from center of Drain
pad to center of Source pad
Ls +LD
Total Inductance
––– 4.0
–––
nH
Ciss
Coss
Crss
RG
Input Capacitance
––– 10520 –––
––– 2780 –––
––– 310 –––
VGS = 0V
VDS = -25V
ƒ = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
pF
–––
2.3
–––
ƒ = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Min. Typ. Max. Units
Test Conditions
IS
ISM
––– ––– -56*
––– ––– -224
A
VSD
trr
––– ––– -5.0
––– ––– 150
––– ––– 430
V
TJ= 25°C,IS = -56A, VGS= 0V
TJ= 25°C ,IF = -56A, VDD -25V
di/dt = -100A/µs
Reverse Recovery Time
Reverse Recovery Charge
ns
µC
Qrr
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
* Current is limited by package
Thermal Resistance
Symbol
Parameter
Min.
–––
Typ.
–––
1.6
Max.
0.5
Units
Junction-to-Case
RJC
°C/W
Case -to-PC Board
RJ-PCB
–––
–––
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = -50V, starting TJ = 25°C, L =0.67mH, Peak IL = -56A, VGS = -10V
ISD -56A, di/dt -380A/µs, VDD -60V, TJ 150°C
Pulse width 300 µs; Duty Cycle 2%
Total Dose Irradiation with VGS Bias. -10 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with VDS Bias. -48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A.
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2019-04-13
International Rectifier HiRel Products, Inc.
2N7622U2
IRHLNA797064
Radiation Characteristics
IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total
ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and
specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Up to 300 kRads(Si) 1
Symbol
Parameter
Units
Test Conditions
Min.
-60
Max.
–––
BVDSS
VGS(th)
IGSS
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
VGS = 0V, ID = -250µA
VDS = VGS, ID = -250µA
VGS = -10V
V
V
-1.0
-2.0
Gate-to-Source Leakage Forward
–––
–––
–––
-100
100
-1.0
nA
nA
µA
IGSS
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source On-State
Resistance (TO-3)
Static Drain-to-Source On-State
Resistance (SMD-2)
VGS = 10V
IDSS
VDS = -48V, VGS = 0V
RDS(on)
V
GS = -4.5V, ID2 = -56A
GS = -4.5V, ID2 = -56A
–––
0.019
RDS(on)
VSD
V
–––
–––
0.017
-5.0
Diode Forward Voltage
VGS = 0V, IS = -56A
V
1. Part numbers IRHLNA797064 and IRHLNA793064
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
VDS (V)
LET
Energy
(MeV)
Range
(µm)
(MeV/(mg/cm2))
@VGS=0V @VGS=2V @VGS=3V @VGS=4V @VGS=5V @VGS=6V
32.4
61.7
92.3
679
584
83.3
48.7
65.1
-60
-60
-40
-60
-60
–––
-60
-60
–––
-60
-60
–––
-60
–––
–––
-60
–––
–––
1156
-70
-60
-50
-40
-30
-20
-10
0
LET = 32.4
LET = 61.7
LET = 92.3
0
1
2
3
4
5
6
Bias VGS (V)
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the page 2.
3
2019-04-13
International Rectifier HiRel Products, Inc.
2N7622U2
IRHLNA797064
Pre-Irradiation
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
100
10
1.5
1.0
0.5
I
= -56A
D
T
= 25°C
J
T
J
= 150°C
V
= -25V
DS
60s PULSE WIDTH
V
= -4.5V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
2
2.5
3
3.5
4
-V , Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
30
25
20
15
10
5
18
T
= 150°C
I
= -56A
J
D
16
14
12
10
8
T
T
= 150°C
J
= 25°C
T
= 25°C
J
J
Vgs = -4.5V
80
0
2
4
6
8
10
12
0
20
40
60
100
-I , Drain Current (A)
D
-V
Gate -to -Source Voltage (V)
GS,
Fig 6. Typical On-Resistance Vs Drain Current
2019-04-13
Fig 5. Typical On-Resistance Vs Gate Voltage
4
International Rectifier HiRel Products, Inc.
2N7622U2
IRHLNA797064
Pre-Irradiation
75
70
65
60
55
50
2.0
1.5
1.0
0.5
0.0
I
= -1.0mA
D
I
I
I
I
= -50µA
D
D
D
D
= -250µA
= -1.0mA
= -150mA
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
T
J
T
J
Fig 8. Typical Threshold Voltage Vs
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
Temperature
16000
14000
12000
10000
8000
6000
4000
2000
0
12
8
V
= 0V,
f = 1 MHz
GS
V
V
= -48V
= -30V
I
= -56A
DS
DS
C
C
C
= C + C , C
SHORTED
ds
D
iss
rss
oss
gs
gd
gd
= C
VDS= -12V
= C + C
ds
gd
C
iss
C
oss
rss
4
FOR TEST CIRCUIT
SEE FIGURE 17
C
0
1
10
100
0
50
Q
100
150
200
250
300
-V , Drain-to-Source Voltage (V)
DS
Total Gate Charge (nC)
G,
Fig 10. Typical Gate Charge Vs.
Fig 9. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
T
= 150°C
J
T
= 25°C
J
1
V
= 0V
GS
0.1
0
1
2
3
4
5
-V
, Source-to-Drain Voltage (V)
SD
Fig 11. Typical Source-Drain Diode Forward Voltage
Fig 12. Maximum Drain Current Vs.Case Temperature
2019-04-13
5
International Rectifier HiRel Products, Inc.
2N7622U2
IRHLNA797064
Pre-Irradiation
2400
2000
1600
1200
800
400
0
I
D
TOP
-25A
-35.4A
BOTTOM -56A
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
1
D = 0.50
0.20
0.10
0.1
0.01
P
DM
t
1
0.05
SINGLE PULSE
( THERMAL RESPONSE )
t
2
0.02
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
2019-04-13
International Rectifier HiRel Products, Inc.
2N7622U2
IRHLNA797064
Pre-Irradiation
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
Fig 17b. Gate Charge Test Circuit
Fig 17a. Gate Charge Waveform
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
7
2019-04-13
International Rectifier HiRel Products, Inc.
2N7622U2
IRHLNA797064
Pre-Irradiation
Case Outline and Dimensions - SMD-2
www.infineon.com/irhirel
Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555
Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776
San Jose, California 95134, USA Tel: +1 (408) 434-5000
Data and specifications subject to change without notice.
8
2019-04-13
International Rectifier HiRel Products, Inc.
2N7622U2
IRHLNA797064
IMPORTANT NOTICE
The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The
data contained herein is a characterization of the component based on internal standards and is intended to
demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and
analysis to determine suitability in the application environment to confirm compliance to your system requirements.
With respect to any example hints or any typical values stated herein and/or any information regarding the application of
the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without
limitation warranties on non- infringement of intellectual property rights and any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s product and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any
customer’s technical departments to evaluate the suitability of the product for the intended applications and the
completeness of the product information given in this document with respect to applications.
For further information on the product, technology, delivery terms and conditions and prices, please contact your local
sales representative or go to (www.infineon.com/hirel).
WARNING
Due to technical requirements products may contain dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies office.
9
2019-04-13
International Rectifier HiRel Products, Inc.
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