IRHM9150SCS [INFINEON]

Power Field-Effect Transistor, 22A I(D), 100V, 0.085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA;


型号：	IRHM9150SCS
厂家：	Infineon
描述：	Power Field-Effect Transistor, 22A I(D), 100V, 0.085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA 局域网开关脉冲晶体管
文件：	总8页 (文件大小：125K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 90889B

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTOR

IRHM9150

IRHM93150

P-CHANNEL

RAD HARD

Product Summary

-100 Volt, 0.073Ω, RAD HARD HEXFET

International Rectifier’s P-Channel RAD HARD technology

HEXFETs demonstrate excellent threshold voltage stability

and breakdown voltage stability at total radiation doses as

high as 3 X 10⁵Rads (Si). Under identical pre- and post-

radiation test conditions, International Rectifier’s P-Channel

RAD HARD HEXFETs retain identical electrical specifica-

tions up to 1 x 10⁵Rads (Si) total dose. No compensation in

gate drive circuitry is required. These devices are also ca-

pable of surviving transient ionization pulses as high as 1 x

10¹²Rads (Si)/Sec, and return to normal operation within a

few microseconds. Single Event Effect (SEE) testing of In-

ternational Rectifier P-Channel RAD HARD HEXFETs has

demonstrated virtual immunity to SEE failure. Since the P-

Channel RAD HARD process utilizes InternationalRectifier’s

patented HEXFET technology, the user can expect the high-

est quality and reliability in the industry.

Part Number

IRHM9150

BVDSS

-100V

RDS(on)

0.080Ω

-22A

IRHM93150

Features:

n Radiation Hardened up to 3 x 10⁵Rads (Si)

n Single Event Burnout (SEB) Hardened

n Single Event Gate Rupture (SEGR) Hardened

n Gamma Dot (Flash X-Ray) Hardened

n Neutron Tolerant

n Identical Pre- and Post-Electrical Test Conditions

n Repetitive Avalanche Rating

n Dynamic dv/dt Rating

n Simple Drive Requirements

n Ease of Paralleling

P-Channel RAD HARD HEXFET transistors also feature

all of the well-established advantages of MOSFETs, such

as voltage control, very fast switching, ease of paralleling

and temperature stability of the electrical parameters.They

are well-suited for applications such as switching power sup-

plies, motor controls, inverters, choppers, audio amplifiers

and high-energy pulse circuits in space and weapons

environments.

n Hermetically Sealed

n Electrically Isolated

n Ceramic Eyelets

Pre-Irradiation

Absolute Maximum Ratings

Parameter

IRHM9150, IRHM93150

Units

@ V

= -12V, T = 25°C Continuous Drain Current

-22

@ V

= -12V, T = 100°C Continuous Drain Current

-14

Pulsed Drain Current

Max. Power Dissipation

- 88

@ T = 25°C

150

W/°C

Linear Derating Factor

1.2

± 20

500

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

-22

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

V/ns

dv/dt

-23

-55 to 150

Storage Temperature Range

STG

^oC

300 (0.063 in. (1.6mm) from case for 10s

9.3 (typical)

Lead Temperature

Weight

www.irf.com

10/23/98

IRHM9150, IRHM93150 Devices

Pre-Irradiation

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

Drain-to-Source Breakdown Voltage

-100

—

= 0V, I = -1.0mA

DSS

V/°C Reference to 25°C, I = -1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

-0.093

DSS

Voltage

Static Drain-to-Source

On-State Resistance

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

—

-2.0

—

0.080

0.085

-4.0

—

= -12V, I = -14A

DS(on)

Ω

= -12V, I = -22A

= V , I = -1.0mA

GS(th)

Ω

S ( )

> -15V, I

= -14A

-25

-250

= 0.8 x Max Rating,V =0V

DSS

DS GS

µ A

—

= 0.8 x Max Rating

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

—

8.7

-100

100

200

= -20V

= 20V

GSS

=-12V, I = -22A

V = Max Rating x 0.5

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

d(on)

= -50V, I =-22A,

DD D

Rise Time

Turn-Off Delay Time

170

190

—

= 2.35Ω

d(off)

Fall Time

symbol show-

Measured from drainlead,

6mm (0.25 in) from package

tocenterofdie.

Measured from source lead,

6mm (0.25 in) from package

to source bonding pad.

Modified MOSFET

ingtheinternal inductances.

Internal Drain Inductance

Internal Source Inductance

—

8.7

—

Input Capacitance

—

4300

1100

310

—

= 0V, V

= -25V

f = 1.0MHz

iss

GS DS

Output Capacitance

Reverse Transfer Capacitance

oss

rss

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode)

—

-22

-88

Modified MOSFET symbol showingtheintegral

reversep-njunctionrectifier.

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

-3.0

300

1.5

T = 25°C, I = -22A, V

= 0V

T = 25°C, I = -22A, di/dt ≤ -100A/µs

µC

≤ -50V

Forward Turn-On Time

Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

thJC

thCS

thJA

Junction-to-Case

Case-to-Sink

—

0.21

—

0.83

—

°C/W

Junction-to-Ambient

Typical socket mount

www.irf.com

Radiation Characteristics

IRHM9150, IRHM93150 Devices

Radiation Performance of Rad Hard HEXFETs

post-irradiation performance are tested and specified

using the same drive circuitry and test conditions in

order to provide a direct comparison. It should be

noted that at a radiation level of 3 x 10⁵Rads (Si) the

only parametric limit change is V_GS(th)maximum.

IInternational Rectifier Radiation Hardened HEXFETs

are tested to verify their hardness capability. The hard-

ness assurance program at International Rectifier com

prises three radiation environments.

Every manufacturing lot is tested in a low dose rate

(total dose) environment per MIL-STD-750, test

method 1019 condition A. International Rectifier has

imposed a standard gate condition of -12 volts per

note 5 and a V_DSbias condition equal to 80% of the

device rated voltage per note 6. Pre- and post- irradia-

tion limits of the devices irradiated to 1 x 10⁵Rads (Si)

are identical and are presented inTable1, column1.Post-

irradiation limits of the devices irradiated to 3 x 10⁵

Rads (Si) are presented in Table 1, column 2. The val-

ues in Table 1 will be met for either of the two low

dose rate test circuits that are used. Both pre- and

High dose rate testing may be done on a special re-

quest basis using a dose rate up to 1 x 10¹²Rads

(Si)/Sec (See Table 2). International Rectifier radia-

tion hardened P-Channel HEXFETs are considered

to be neutron-tolerant, as stated in MIL-PRF-19500

Group D.

International Rectifier radiation hardened P-Channel

HEXFETs have been characterized in heavy ion

Single Event Effects (SEE) environments. Single

Event Effects characterization is shown in Table 3.

Table 1. Low Dose Rate ꢀ

IRHM9150 IRHM93150

Parameter

100K Rads (Si) 300K Rads (Si) Units

Test Conditions

= 0V, I = -1.0mA

Min Max

Min

Max

Drain-to-Source Breakdown Voltage -100

—

-100

-2.0

—

-5.0

-100

100

DSS

Gate Threshold Voltage

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

Static Drain-to-Source

-2.0 -4.0

= V , I = -1.0mA

GS(th)

—

-100

100

-25

= -20V

GSS

DSS

—

= 20 V

-25

µA

=0.8 x Max Rating, V =0V

DS GS

0.080

—

0.080

Ω

= -12V, I = -14A

DS(on)1

On-State Resistance One

Diode Forward Voltage

—

-3.0

—

-3.0

= 25°C, I = -22A,V

= 0V

Table 2. High Dose Rate

10¹¹Rads (Si)/sec 10¹²Rads (Si)/sec

Min Typ Max Min Typ Max Units

Parameter

Test Conditions

Drain-to-Source Voltage

—

-80

—

-80

Applied drain-to-source voltage during

gamma-dot

DSS

—

0.1

-100

—

-800

—

0.5

100

—

Peak radiation induced photo-current

di/dt

-160 A/µsec Rate of rise of photo-current

µH Circuit inductance required to limit di/dt

—

Table 3. Single Event Effects

LET (Si)

Fluence

Range

(µm)

Bias

(V)

Bias

(V)

Ion

(MeV/mg/cm²)

(ions/cm²)

1x 10⁵

~41

-100

www.irf.com

IRHM9150, IRHM93150 Devices

Pre-Irradiation

100

VGS

-15V

-12V

-10V

-9.0V

-8.0V

-7.0V

-6.0V

TOP

-15V

-12V

-10V

-9.0V

-8.0V

-7.0V

-6.0V

TOP

BOTTOM -5.0V

-5.0V

20µs PULSE WIDTH

T = 150 C

20µs PULSE WIDTH

T = 25 C

100

-V , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

3.0

100

-22A

2.5

2.0

1.5

1.0

0.5

0.0

T = 25 C

T = 150 C

= -50V

=-12V

20µs PULSE WIDTH

-60 -40 -20

20 40 60 80 100 120 140 160

T , Junction Temperature( C)

, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

www.irf.com

Pre-Irradiation

IRHM9150, IRHM93150 Devices

7000

= 0V,

f = 1MHz

C SHORTED

= -22A

= C + C

iss

gd ,

=-80V

=-50V

=-20V

= C

6000

5000

4000

3000

2000

1000

rss

= C + C

oss

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 13

120

160

200

100

, Total Gate Charge (nC)

-V , Drain-to-Source Voltage (V)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

100

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

100

T = 150 C

100us

1ms

T = 25 C

10ms

T = 25 C

T = 150 C

= 0 V

Single Pulse

100

1000

0.0

1.0

2.0

3.0

4.0

-V ,Source-to-Drain Voltage (V)

-V , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

www.irf.com

IRHM9150, IRHM93150 Devices

Pre-Irradiation

R_D

V_DS

V_GS

D.U.T.

R_G

V_DD

-12V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

d(on)

d(off)

10%

100

125

150

, Case Temperature ( C)

90%

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

0.01

Notes:

1. Duty factor D = t / t

2. Peak T = P

x Z

+ T

thJC

0.001

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

Pre-Irradiation

IRHM9150, IRHM93150 Devices

1200

1000

800

600

400

200

TOP

-9.8A

-14A

BOTTOM -22A

D.U.T

DRIVER

--1220VV

0.01

Ω

15V

Fig 12a. Unclamped Inductive Test Circuit

100

125

150

Starting T , Junction Temperature( C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

(BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

-12V

12V

.3µF

-12V

D.U.T.

-3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

www.irf.com

IRHM9150, IRHM93150 Devices

Pre-Irradiation

Repetitive Rating; Pulse width limited by

maximum junction temperature.

ꢀTotal Dose Irradiation with V

Bias.

= 0 during

12 volt V

applied and V

irradiation per MIL-STD-750, method 1019, condition A.

Refer to current HEXFET reliability report.

@ V

= -25V, Starting T = 25°C,

= [0.5

Total Dose Irradiation with V Bias.

(pre-Irrradiation)

(I ²) ]

* L

= 0.8 rated BV

applied and V

DSS

Peak I = -22A, V

= -12V, 25 ≤ R ≤ 200Ω

= 0 during irradiation per

MlL-STD-750, method 1019, condition A.

≤ -22A, di/dt ≤ -450A/µs,

This test is performed using a flash x-ray

source operated in the e-beam mode (energy

~2.5 MeV), 30 nsec pulse.

≤ BV , T ≤ 150°C

DSS

Suggested RG = 2.35Ω

Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

irradiation per MIL-STD-750, method 1019, condition A.

All Pre-Irradiation and Post-Irradiation test

conditions are identical to facilitate direct

comparison for circuit applications.

Case Outline and Dimensions — TO-254AA

.12

( .005 )

13.84

13.59

(

.545

.535

)

-B-

6.60

6.32

(

.260

.249

)

3.78

3.53

(

.149

.139

)

1.27

1.02

(

.050

.040

)

-A-

20.32

20.07

(

.800

.790

)

17.40

16.89

(

.685

.665

)

13.84

13.59

(

.545

.535

)

LEG END

2 3

CO LLEC TOR

EM ITTER

G ATE

31.40

30.39

(

1.235

1.199

)

-C-

1.14

0.89

(

.045

.035

)

3.81

(

.150

)

3.81

( .150 )

.50

.25

(

.020

.010

)

LEGEND

1- DRAIN

2- SOURCE

3- GATE

LEGEND

1- DRAIN

2- SOURCE

3- GATE

NOTE S:

1. D IM EN SION IN G

TO LERANC IN G PER AN SI Y14.5M , 1982.

IN M ILLIM ETERS INCH ES ).

2. ALL DIM ENSIO NS AR E SHO W

(

Conforms to JEDEC Outline TO-254AA

Dimensions in Millimeters and ( Inches )

CAUTION

BERYLLIA WARNING PER MIL-PRF-19500

Package containing beryllia shall not be ground, sandblasted,

machined, or have other operations performed on them which

will produce beryllia or beryllium dust. Furthermore, beryllium

oxide packages shall not be placed in acids that will produce

fumes containing beryllium.

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936

http://www.irf.com/

Data and specifications subject to change without notice.

10/98

www.irf.com

IRHM9150SCS [INFINEON]

相关型号：

IRHM9150U

IRHM9150UPBF

IRHM9160

IRHM9230

IRHM9230D

IRHM9230DPBF

IRHM9230U

IRHM9230UPBF

IRHM9250

IRHM9250DPBF

IRHM9250SCSPBF

IRHM9250U