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IRHM9150UPBF [INFINEON]

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IRHM9150UPBF
型号： IRHM9150UPBF
厂家： Infineon    Infineon
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PD - 90889D  
IRHM9150  
JANSR2N7422  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (TO-254AA)  
100V, P-CHANNEL  
REF: MIL-PRF-19500/662  
RAD Hard™ HEXFET® TECHNOLOGY  
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
QPL Part Number  
JANSR2N7422  
JANSF2N7422  
IRHM9150  
100K Rads (Si) 0.080Ω  
300K Rads (Si) 0.080Ω  
-22A  
-22A  
IRHM93150  
International Rectifier’s RADHard HEXFETTM technol-  
ogy provides high performance power MOSFETs for  
space applications. This technology has over a de-  
cade of proven performance and reliability in satellite  
applications. These devices have been character-  
ized for bothTotal Dose and Single Event Effects (SEE).  
The combination of low Rdson and low gate charge  
reduces the power losses in switching applications  
such as DC to DC converters and motor control. These  
devices retain all of the well established advantages  
of MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of elec-  
trical parameters.  
TO-254AA  
Features:  
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
LowTotal Gate Charge  
ProtonTolerant  
SimpleDriveRequirements  
EaseofParalleling  
Hermetically Sealed  
Surface Mount  
Ceramic Package  
LightWeight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= -12V, T = 25°C Continuous Drain Current  
-22  
-14  
D
D
GS  
GS  
C
A
I
= -12V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
-88  
DM  
@ T = 25°C  
P
D
150  
W
W/°C  
V
C
1.2  
V
GS  
Gate-to-SourceVoltage  
±20  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
500  
mJ  
A
AS  
I
-22  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
15  
mJ  
AR  
dv/dt  
-23  
V/ns  
T
-55 to 150  
J
oC  
g
T
STG  
StorageTemperature Range  
Lead Temperature  
Weight  
300 ( 0.063 in. (1.6mm) from case for 10s)  
9.3 (typical)  
For footnotes refer to the last page  
www.irf.com  
1
2/18/03  
IRHM9150  
Pre-Irradiation  
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)  
Parameter  
Min Typ Max Units  
Test Conditions  
BV  
DSS  
Drain-to-Source BreakdownVoltage  
-100  
—
—
—
—
V
V
= 0V, I =-1.0mA  
D
GS  
V/°C Reference to 25°C, I = -1.0mA  
∆BV  
/∆T Temperature Coefficient of Breakdown  
-0.093  
DSS  
J
D
Voltage  
R
Static Drain-to-Source On-State  
Resistance  
—
—
—
—
—
—
—
—
0.080  
0.085  
-4.0  
—
V
= -12V, I = -14A➀  
DS(on)  
GS D  
Ω
V
= -12V, I = -22A➀  
D
GS  
V
Gate Threshold Voltage  
Forward Transconductance  
Zero Gate Voltage Drain Current  
-2.0  
11  
—
V
V
V
= V , I = -1.0mA  
GS(th)  
fs  
DS  
GS  
D
Ω
g
S ( )  
>-15V, I  
= -14A ➀  
DS  
DS  
I
-25  
V
= -80V ,V =0V  
DS GS  
DSS  
µA  
—
-250  
V
= -80V,  
DS  
= 0V, T = 125°C  
V
GS  
J
I
Gate-to-Source Leakage Forward  
Gate-to-Source Leakage Reverse  
Total Gate Charge  
Gate-to-Source Charge  
Gate-to-Drain (‘Miller’) Charge  
Turn-On Delay Time  
Rise Time  
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8  
-100  
100  
200  
35  
V
= -20V  
GSS  
GS  
nA  
nC  
I
V
= 20V  
GSS  
GS  
Q
Q
V
=-12V, I = -22A  
GS D  
g
gs  
V
DS  
= -50V  
Q
48  
gd  
t
40  
V
= -50V, I = -22A,  
d(on)  
DD  
GS  
D
t
t
t
170  
190  
190  
—
V
=-12V, R = 2.35Ω  
r
G
ns  
Turn-Off Delay Time  
FallTime  
Total Inductance  
d(off)  
f
L
+ L  
Measured from drain lead (6mm/0.25in. from  
package) to source lead (6mm/0.25in. from  
package)  
S
D
nH  
C
Input Capacitance  
—
—
—
4300  
1100  
310  
—
—
—
V
= 0V,V  
= -25V  
f = 1.0MHz  
iss  
GS DS  
C
Output Capacitance  
Reverse Transfer Capacitance  
pF  
oss  
C
rss  
Source-Drain Diode Ratings and Characteristics  
Parameter  
Min Typ Max Units  
Test Conditions  
I
Continuous Source Current (Body Diode)  
—
—
—
—
-22  
-88  
S
A
I
Pulse Source Current (Body Diode) ➀  
SM  
V
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
—
—
—
—
—
—
-3.0  
300  
1.5  
V
T = 25°C, I = -22A, V  
= 0V ➀  
j
SD  
S
GS  
t
nS  
µC  
T = 25°C, I = -22A, di/dt ≤ -100A/µs  
j
rr  
F
Q
V
≤ -50V ➀  
RR  
DD  
t
Forward Turn-On Time  
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .  
S D  
on  
Thermal Resistance  
Parameter  
Min Typ Max Units  
Test Conditions  
R
thJC  
R
thJA  
R
thCS  
Junction-to-Case  
Junction-to-Ambient  
Case-to-Sink  
—
—
—
—
—
0.21  
0.83  
48  
—
°C/W  
Typical socket mount  
Note: Corresponding Spice and Saber models are available on the G&S Website.  
For footnotes refer to the last page  
2
www.irf.com  
Radiation Characteristics  
IRHM9150  
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.  
The hardness assurance program at International Rectifier is comprised of two radiation environments.  
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both  
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test  
conditions in order to provide a direct comparison.  
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀  
Parameter  
Min  
Drain-to-Source Breakdown Voltage -100  
100KRads(Si)1  
300K Rads (Si)2  
Units  
Test Conditions  
Max  
Min  
Max  
BV  
—
-100  
-2.0  
—
—
V = 0V, I = -1.0mA  
GS D  
DSS  
V
V
Gate Threshold Voltage  
-2.0  
—
-4.0  
-100  
100  
-25  
-5.0  
-100  
100  
-25  
V
= V , I = -1.0mA  
GS  
GS(th)  
DS  
D
I
Gate-to-Source Leakage Forward  
Gate-to-Source Leakage Reverse  
Zero Gate Voltage Drain Current  
V
= -20V  
= 20 V  
GSS  
GS  
GS  
nA  
I
—
—
V
GSS  
I
—
—
µA  
V
=-80V, V =0V  
GS  
= -12V, I =-14A  
D
DSS  
DS  
GS  
R
DS(on)  
Static Drain-to-Source  
On-State Resistance (TO-3)  
Static Drain-to-Source  
On-State Resistance (TO-254)  
Diode Forward Voltage  
➀
—
0.080  
—
0.080  
Ω
V
V
R
DS(on)  
➀
—
—
0.080  
-3.0  
—
0.080  
-3.0  
Ω
= -12V, I =-14A  
D
GS  
V
SD  
➀
—
V
V
= 0V, I = -22A  
GS S  
1. Part number IRHM9150 (JANSR2N7422)  
2. Part number IRHM93150 (JANSF2N7422)  
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for  
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.  
Table 2. Single Event Effect Safe Operating Area  
VDS(V)  
LET  
MeV/(mg/cm²))  
Energy Range  
Ion  
(MeV)  
(µm)  
@VGS=0V  
-100  
@VGS=5V @VGS=10V @VGS=15V @VGS=20V  
Cu  
Br  
I
28  
285  
305  
345  
43  
39  
-100  
-100  
—
-100  
-70  
—
-70  
-50  
—
-60  
-40  
—
36.8  
59.9  
-100  
32.8  
-60  
-120  
-100  
-80  
-60  
-40  
-20  
0
Cu  
Br  
I
0
5
10  
VGS  
15  
20  
Fig a. Single Event Effect, Safe Operating Area  
For footnotes refer to the last page  
www.irf.com  
3
IRHM9150  
Pre-Irradiation  
100  
100  
VGS  
-15V  
-12V  
-10V  
-9.0V  
-8.0V  
-7.0V  
-6.0V  
VGS  
-15V  
-12V  
-10V  
-9.0V  
-8.0V  
-7.0V  
-6.0V  
TOP  
TOP  
BOTTOM -5.0V  
BOTTOM -5.0V  
-5.0V  
10  
-5.0V  
20µs PULSE WIDTH  
°
20µs PULSE WIDTH  
°
T = 150 C  
T = 25 C  
J
J
10  
10  
1
10  
100  
1
100  
-V , Drain-to-Source Voltage (V)  
DS  
-V , Drain-to-Source Voltage (V)  
DS  
Fig1. TypicalOutputCharacteristics  
Fig2. TypicalOutputCharacteristics  
3.0  
100  
-22A  
=
I
D
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
°
T = 25 C  
J
°
T = 150 C  
J
V
= -50V  
DS  
V
= -12V  
20µs PULSE WIDTH  
GS  
10  
5
6
7
8
9
10  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
°
-
V
, Gate-to-Source Voltage (V)  
T , Junction Temperature ( C)  
J
GS  
Fig3. TypicalTransferCharacteristics  
Fig4. NormalizedOn-Resistance  
Vs.Temperature  
4
www.irf.com  
Pre-Irradiation  
IRHM9150  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
20  
16  
12  
8
V
= 0V,  
f = 1MHz  
C
I
D
= -22A  
GS  
C
= C + C  
SHORTED  
ds  
iss  
gs  
gd ,  
gd  
V
V
V
=-80V  
=-50V  
=-20V  
C
= C  
gd  
DS  
DS  
DS  
rss  
C
= C + C  
oss  
ds  
C
iss  
C
oss  
4
C
rss  
FOR TEST CIRCUIT  
SEE FIGURE 13  
0
0
1
0
40  
80  
120  
160  
200  
10  
100  
Q
, Total Gate Charge (nC)  
-V , Drain-to-Source Voltage (V)  
DS  
G
Fig6. TypicalGateChargeVs.  
Fig5. TypicalCapacitanceVs.  
Gate-to-SourceVoltage  
Drain-to-SourceVoltage  
1000  
100  
10  
100  
10  
1
OPERATION IN THIS AREA LIMITED  
BY R  
DS(on)  
°
T = 150 C  
100us  
J
1ms  
°
T = 25 C  
J
10ms  
°
= 25 C  
°
= 150 C  
T
C
T
J
V
= 0 V  
Single Pulse  
GS  
1
1
10  
100  
1000  
0.0  
1.0  
2.0  
3.0  
4.0  
-V , Drain-to-Source Voltage (V)  
DS  
-V ,Source-to-Drain Voltage (V)  
SD  
Fig8. MaximumSafeOperatingArea  
Fig7. TypicalSource-DrainDiode  
ForwardVoltage  
www.irf.com  
5
IRHM9150  
Pre-Irradiation  
RD  
24  
20  
16  
12  
8
VDS  
VGS  
D.U.T.  
RG  
-
+
VDD  
VGS  
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1 %  
Fig10a. SwitchingTimeTestCircuit  
t
t
r
t
t
f
4
d(on)  
d(off)  
V
GS  
10%  
0
25  
50  
T
75  
100  
125  
°
150  
, Case Temperature ( C)  
C
90%  
V
DS  
Fig9. MaximumDrainCurrentVs.  
CaseTemperature  
Fig10b. SwitchingTimeWaveforms  
1
D = 0.50  
0.20  
0.10  
0.05  
0.1  
0.02  
0.01  
SINGLE PULSE  
(THERMAL RESPONSE)  
P
DM  
0.01  
0.001  
t
1
t
2
Notes:  
1. Duty factor D =  
t / t  
1 2  
2. Peak T = P  
x Z  
+ T  
C
J
DM  
thJC  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t , Rectangular Pulse Duration (sec)  
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case  
6
www.irf.com  
Pre-Irradiation  
IRHM9150  
L
V
D S  
1200  
1000  
800  
600  
400  
200  
0
I
D
TOP  
-9.8A  
D .U .T  
R
G
-14A  
BOTTOM -22A  
V
D D  
A
I
A S  
D R IV E R  
-
VGS  
0.01  
Ω
t
p
15V  
Fig12a. UnclampedInductiveTestCircuit  
I
AS  
25  
50  
75  
100  
125  
150  
°
Starting T , Junction Temperature ( C)  
J
Fig12c. MaximumAvalancheEnergy  
Vs.DrainCurrent  
t
p
V
(BR)DSS  
Fig12b. UnclampedInductiveWaveforms  
Current Regulator  
Same Type as D.U.T.  
50KΩ  
.2µF  
Q
G
-12V  
.3µF  
-12V  
-
V
+
DS  
Q
Q
GD  
GS  
D.U.T.  
V
GS  
V
G
-3mA  
I
I
D
G
Charge  
Current Sampling Resistors  
Fig13b. GateChargeTestCircuit  
Fig13a. BasicGateChargeWaveform  
www.irf.com  
7
IRHM9150  
Pre-Irradiation  
Foot Notes:  
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%  
➀ Total Dose Irradiation with V Bias.  
➀ Repetitive Rating; Pulse width limited by  
maximum junction temperature.  
GS  
= 0 during  
➀ V  
= -25V, starting T = 25°C, L=2.1mH  
-12 volt V  
applied and V  
DD  
Peak I = -22A, V  
J
GS  
irradiation per MIL-STD-750, method 1019, condition A.  
DS  
=-12V  
L
GS  
➀ Total Dose Irradiation with V Bias.  
➀ I  
V
≤ -22A, di/dt ≤ -450A/µs,  
SD  
DS  
= 0 during  
-80 volt V  
applied and V  
≤ -100V, T ≤ 150°C  
DS  
GS  
DD  
J
irradiation per MlL-STD-750, method 1019, condition A.  
Case Outline and Dimensions —TO-254AA  
0.12 [.005]  
0.12 [.005]  
6.60 [.260]  
6.32 [.249]  
13.84 [.545]  
13.59 [.535]  
6.60 [.260]  
6.32 [.249]  
13.84 [.545]  
13.59 [.535]  
3.78 [.149]  
3.53 [.139]  
3.78 [.149]  
3.53 [.139]  
1.27 [.050]  
1.02 [.040]  
1.27 [.050]  
1.02 [.040]  
A
A
20.32 [.800]  
20.07 [.790]  
20.32 [.800]  
20.07 [.790]  
17.40 [.685]  
16.89 [.665]  
17.40 [.685]  
16.89 [.665]  
13.84 [.545]  
13.59 [.535]  
B
22.73 [.895]  
21.21 [.835]  
B
13.84 [.545]  
13.59 [.535]  
R 1.52 [.060]  
1
2
3
1
2
3
4.06 [.160]  
3.56 [.140]  
C
17.40 [.685]  
16.89 [.665]  
0.84 [.033]  
MAX.  
4.82 [.190]  
3.81 [.150]  
1.14 [.045]  
0.89 [.035]  
3X  
3.81 [.150]  
2X  
1.14 [.045]  
0.89 [.035]  
0.36 [.014]  
B
A
3X  
3.81 [.150]  
3.81 [.150]  
2X  
0.36 [.014]  
B A  
NOTES :  
PIN ASSIGNMENTS  
1. DIMENSIONING& TOLERANCINGPER ASME Y14.5M-1994.  
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].  
3. CONTROLLINGDIMENSION: INCH.  
1
2
3
=
=
=
DRAIN  
SOURCE  
GATE  
4. CONFORMS TOJEDECOUTLINE TO-254AA.  
CAUTION  
BERYLLIA WARNING PER MIL-PRF-19500  
Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them  
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that  
will produce fumes containing beryllium.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information.  
Data and specifications subject to change without notice. 02/03  
8
www.irf.com  

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