IRHNA7160PBF [INFINEON]
Power Field-Effect Transistor, 51A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD2, 3 PIN;
| 型号： | IRHNA7160PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 51A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD2, 3 PIN 晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网 |
| 文件： | 总8页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91396C
IRHNA7160
100V, N-CHANNEL
REF: MIL-PRF-19500/664
RAD-Hard™ HEXFET®
MOSFETTECHNOLOGY
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level RDS(on)
ID
QPL Part Number
IRHNA7160 100K Rads (Si)
IRHNA3160 300K Rads (Si)
IRHNA4160 600K Rads (Si)
0.04Ω
0.04Ω
0.04Ω
51A JANSR2N7432U
51A JANSF2N7432U
51A JANSG2N7432U
51A JANSH2N7432U
IRHNA8160 1000K Rads (Si) 0.04Ω
SMD - 2
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for bothTotal Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
51
D
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
32.5
204
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
DM
@ T = 25°C
P
300
W
W/°C
V
D
C
Linear Derating Factor
2.4
V
Gate-to-Source Voltage
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
500
mJ
A
AS
I
51
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
30
mJ
V/ns
AR
dv/dt
7.3
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Pckg. Mounting Surface Temp.
Weight
300 ( for 5s)
3.3 (Typical)
For footnotes refer to the last page
www.irf.com
1
5/4/2000
IRHNA7160
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
100
—
—
—
—
V
V
=0 V, I = 1.0mA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.11
DSS
J
D
Voltage
R
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
2.0
16
—
—
—
—
—
—
—
0.040
0.045
4.0
V
= 12V, I = 32.5A
GS D
DS(on)
Ω
V
= 12V, I = 51A
GS
V = V , I = 1.0mA
DS
D
V
V
GS(th)
fs
GS
> 15V, I
D
Ω
g
—
S ( )
V
= 32.5A
DS
DS
I
25
250
V = 80V,V =0V
DS GS
DSS
µA
—
V
= 80V
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
310
53
110
35
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
= 12V, I = 51A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
V
= 50V
DS
t
t
t
t
V
DD
= 50V, I = 51A,
D
150
150
200
—
R
G
= 2.35Ω
ns
d(off)
f
L
L
Total Inductance
S +
D
nH
Measured from center of drain
pad to center of source pad
C
C
C
Input Capacitance
Output Capacitance
—
—
—
5300
1600
350
—
—
—
V
= 0V, V
= 25V
iss
oss
rss
GS
DS
f = 1.0MHz
pF
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
51
204
1.8
520
6.5
S
A
SM
V
T = 25°C, I = 51A, V
= 0V ➀
j
SD
rr
S
GS
Reverse Recovery Time
nS
µC
T = 25°C, I = 51A, di/dt ≥ 100A/µs
j
F
Q
Reverse Recovery Charge
V
DD
≤ 25V ➀
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
Junction-to-PC Board
—
—
—
1.6
0.42
—
thJC
thJPCB
°C/W
Solder to a 1” sq. copper clad PC Board
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHNA7160
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀
1
Parameter
Min
Drain-to-Source Breakdown Voltage 100
100KRads(Si)
600 to 1000K Rads (Si)2 Units
Test Conditions
Max
Min
Max
BV
—
4.0
100
-100
25
100
1.25
—
—
4.5
100
-100
50
V
= 0V, I = 1.0mA
GS D
= V , I = 1.0mA
GS
DS D
DSS
V
V
Gate Threshold Voltage
➀
2.0
—
—
—
—
V
GS(th)
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-2)
Diode Forward Voltage
V
GS
= 20V
GSS
nA
I
—
V
GS
= -20 V
GSS
I
—
µA
V
V
=80V, V =0V
DS GS
DSS
R
DS(on)
➀
0.045
—
0.062
Ω
= 12V, I =32.5A
D
GS
R
DS(on)
➀
—
—
0.04
1.8
—
—
0.057
1.8
Ω
V
= 12V, I =32.5A
D
GS
V
SD
➀
V
V
= 0V, I = 51A
GS S
1. Part number IRHNA7160 (JANSR2N7432U)
2. Part numbers IRHNA3160 (JANSF2N7432U), IRHNA4160 (JANSG2N7432U) and IRHNA8160 (JANSH2N7432U)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Ion
LET
MeV/(mg/cm2))
28
Energy
(MeV)
285
Range
VDS(V)
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
43
39
Cu
Br
100
100
100
90
100
70
80
50
60
—
36.8
305
120
100
80
60
40
20
0
Cu
Br
0
-5
-10
-15
-20
-25
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHNA7160
Pre-Irradiation
1000
100
10
1000
VGS
15V
VGS
TOP
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM5.0V
BOTTOM 5.0V
100
10
1
5.0V
20µs PULSE WIDTH
T = 25 C
20µs PULSE WIDTH
T = 150 C
J
5.0V
°
°
J
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
51A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
= 12V
GS
1
5
6
7
8
9
10 11
12
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHNA7160
10000
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
I
D
= 51A
GS
C
= C + C
V
V
V
= 80V
= 50V
= 20V
iss
gs
gd
gd ,
DS
DS
DS
C
= C
rss
C
= C + C
gd
8000
6000
4000
2000
0
oss
ds
C
iss
C
C
oss
4
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
40
80
120
160
200
240
280
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
10
1
100us
°
T = 150 C
J
1ms
10ms
°
T = 25 C
J
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1
0.0
0.5
V
1.0
1.5
2.0
2.5
3.0
3.5
1
10
100
1000
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
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5
IRHNA7160
Pre-Irradiation
60
50
40
30
20
10
RD
VDS
VGS
12V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.01
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNA7160
1200
1000
800
600
400
200
0
I
D
TOP
23A
32A
15V
BOTTOM 51A
DRIVER
L
V
D S
D.U.T
AS
R
G
+
V
D D
-
I
A
12V
2
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
V
(BR)D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHNA7160
Pre-Irradiation
Foot Notes:
➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀➀➀Total Dose Irradiation with V Bias.
➀➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
➀➀➀V
= 25V, starting T = 25°C, L= 0.38mH
J
GS
DS
DD
Peak I = 51A, V
irradiation per MIL-STD-750, method 1019, condition A.
= 12V
L
GS
➀➀Total Dose Irradiation with V Bias.
➀➀ I
≤51A, di/dt ≤ 410A/µs,
DS
= 0 during
SD
DD
80 volt V
applied and V
GS
V
≤ 100V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
J
Case Outline and Dimensions — SMD-2
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Data and specifications subject to change without notice. 5/00
8
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