IRHNJ67134 [INFINEON]
RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5); 抗辐射功率MOSFET表面贴装（ SMD- 0.5 ）
| 型号： | IRHNJ67134 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5) |
| 文件： | 总8页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-96931A
RADIATION HARDENED
POWER MOSFET
SURFACE-MOUNT (SMD-0.5)
IRHNJ67134
150V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHNJ67134 100K Rads (Si)
IRHNJ63134 300K Rads (Si)
0.088Ω 19A
0.088Ω 19A
SMD-0.5
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2). Their combination of
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
very low R
and faster switching times reduces
DS(on)
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Ceramic Package
Light Weight
Pre-Irradiation
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C Continuous Drain Current
19
D
D
GS
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
12
76
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
75
W
W/°C
V
D
C
0.6
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
60
GS
E
mJ
A
AS
I
19
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
8.6
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
1.0 (Typical)
For footnotes refer to the last page
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1
02/03/05
IRHNJ67134
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
150
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.18
—
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
0.088
Ω
V
= 12V, I = 12A
GS D
Ã
DS(on)
2.0
13
—
—
—
—
—
4.0
—
10
25
V
S ( )
V
DS
= V , I = 1.0mA
GS(th)
fs
GS
D
Ω
g
V
DS
= 15V, I
= 12A Ã
DS
I
V
DS
= 120V ,V =0V
GS
DSS
µA
—
V
= 120V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
50
15
18
20
30
35
25
V
V
= 20V
= -20V
GSS
GSS
GS
GS
nA
nC
Q
Q
Q
V
= 12V, I = 19A
g
gs
gd
d(on)
r
GS D
V
= 75V
DS
t
t
t
t
V
DD
= 75V, I = 19A,
D
V
= 12V, R = 7.5Ω
GS G
ns
d(off)
f
L
+ L
—
S
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
1570
240
5.2
—
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
oss
rss
GS DS
pF
R
1.08
Ω
f = 1.0MHz, open drain
g
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Q
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
19
76
1.2
300
2.6
S
SM
SD
rr
A
V
ns
µC
T = 25°C, I = 19A, V
= 0V Ã
j
S
GS
T = 25°C, I = 19A, di/dt ≤ 100A/µs
j
F
V
DD
≤ 25V Ã
RR
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
1.67
°C/W
thJC
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHNJ67134
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 300K Rads (Si) Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
150
2.0
—
—
—
—
4.0
100
-100
10
V
= 0V, I = 1.0mA
DSS
GS D
V
V
V
= V , I = 1.0mA
GS
GS(th)
DS
D
I
V
GS
= 20V
GSS
nA
µA
I
V
GS
= -20V
GSS
I
V
= 120V, V = 0V
DS GS
DSS
R
DS(on)
On-State Resistance (TO-3)
Static Drain-to-Sourcee
—
0.092
Ω
V
GS
= 12V, I = 12A
D
R
DS(on)
On-State Resistance (SMD-0.5)
—
—
0.088
1.2
Ω
V
= 12V, I = 12A
D
GS
V
Diode Forward Voltage
V
V
= 0V, I = 19A
D
GS
SD
Part numbers IRHNJ67134 and IRHNJ63134
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Tables.
Tables for Single Event Effect Safe Operating Area
Ion Kr
LET = 39 MeV/(mg/cm2)
Energy = 312 MeV
Range = 39 µm
Ion Xe
Ion Au
LET = 90 MeV/(mg/cm2)
Energy = 1480 MeV
Range = 80 µm
LET = 59 MeV/(mg/cm2)
Energy = 825 MeV
Range = 66 µm
VGS Bias
VDS Bias
VGS Bias
VDS Bias
VGS Bias
VDS Bias
(Volts)
0
-5
-10
-15
-20
(Volts)
150
150
150
150
(Volts)
0
-5
(Volts)
150
150
150
140
50
(Volts)
0
-5
(Volts)
50
50
-9
-10
30
-10
-11
-15
150
40
180
150
120
90
Kr
Xe
Au
60
30
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNJ67134
Pre-Irradiation
1000
100
10
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
VGS
15V
12V
TOP
TOP
10V
9.0V
8.0V
7.0V
6.0V
100
BOTTOM 5.0V
BOTTOM 5.0V
10
1
5.0V
1
5.0V
µ
60 s PULSE WIDTH
Tj = 150°C
µ
60 s PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
I
= 19A
D
T
= 150°C
J
T
= 25°C
J
10
V
DS
= 50V
V
= 12V
60µs PULSE WIDTH
GS
1.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
5
6
7
8
9
10
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHNJ67134
2800
20
16
12
8
V
= 0V,
= C
f = 1 MHz
GS
V
V
V
= 120V
DS
DS
DS
I
= 19A
C
C
C
+ C , C
SHORTED
D
iss
gs
gd
ds
= 75V
= 30V
2400
2000
1600
1200
800
400
0
= C
rss
oss
gd
= C + C
ds
gd
C
iss
C
oss
4
C
FOR TEST CIRCUIT
SEE FIGURE 13
rss
0
1
10
100
0
10
Q
20
30
40
50
60
V
, Drain-to-Source Voltage (V)
Total Gate Charge (nC)
DS
G,
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
100
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
J
10
1
= 25°C
T
J
100µs
1ms
1
Tc = 25°C
Tj = 150°C
10ms
V
= 0V
GS
Single Pulse
0.1
0.1
1
10
100
1000
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
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5
IRHNJ67134
Pre-Irradiation
RD
20
16
12
8
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
4
V
DS
90%
0
25
50
75
100
125
150
T
, Case Temperature (°C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.1
SINGLE PULSE
(THERMAL RESPONSE)
t
1
0.02
0.01
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNJ67134
100
80
60
40
20
0
I
D
15V
TOP
19A
12A
BOTTOM 8.5A
DRIVER
+
L
V
DS
.
D.U.T
R
G
V
DD
-
I
A
AS
V
2
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
V
Starting T , Junction Temperature (°C)
(BR)DSS
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHNJ67134
Footnotes:
Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
Á V
= 25V, starting T = 25°C, L= 0.33 mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I =19A, V
= 12V
L
GS
Å
Total Dose Irradiation with V
Bias.
 I
≤ 19A, di/dt ≤ 673A/µs,
DS
= 0 during
SD
DD
120 volt V
applied and V
V
≤ 150V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
J
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
1 = DRAIN
2 = GATE
3 = SOURCE
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Data and specifications subject to change without notice. 02/2005
8
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