IRHQ58110PBF [INFINEON]
Power Field-Effect Transistor, 4.6A I(D), 100V, 0.31ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-28;
| 型号： | IRHQ58110PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 4.6A I(D), 100V, 0.31ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-28 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢁ
PD-94211E
IRHQ57110
100V, Quad N-CHANNEL
TECHNOLOGY
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)
5
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHQ57110
IRHQ53110
IRHQ54110
100K Rads (Si)
300K Rads (Si)
500K Rads (Si)
0.27Ω
0.27Ω
0.27Ω
0.29Ω
4.6A
4.6A
4.6A
4.6A
LCC-28
IRHQ58110 1000K Rads (Si)
Features:
International Rectifier’s R5TM technology provides high
performance power MOSFETs for space applications.
These devices have been characterized for Single Event
Effects (SEE) with useful performance up to an LET of
80 (MeV/(mg/cm2)). The combination of low RDS(on) and
low gate charge reduces the power losses in switching
applications such as DC to DC converters and motor
control. These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching, ease of paralleling and temperature stability
of electrical parameters.
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
ESD Rating: Class 1A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings (Per Die)
Parameter
Pre-Irradiation
Units
I
@ V
= 12V, T = 25°C
Continuous Drain Current
4.6
D
GS
GS
C
I
D
@ V
= 12V, T = 100°C Continuous Drain Current
2.9
18.4
12
A
C
I
Pulsed Drain Current À
Max. Power Dissipation
DM
@ T = 25°C
P
W
W/°C
V
D
C
Linear Derating Factor
0.1
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
GS
E
47
mJ
A
AS
I
4.6
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
1.2
mJ
V/ns
AR
dv/dt
6.1
T
-55 to 150
J
T
Storage Temperature Range
°C
g
STG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
0.89 (Typical)
For footnotes refer to the last page
www.irf.com
1
05/0115
IRHQ57110
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) (Per Die)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
100
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.13
—
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
2.0
3.3
—
—
—
—
—
—
—
0.31
0.27
4.0
—
10
25
V
V
= 12V, I = 4.6A
D
DS(on)
GS
GS
Ã
Ω
= 12V, I = 2.9A
D
V
g
V
S
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
V
= 15V, I
= 2.9A Ã
DS
V
DS
I
= 80V, V =0V
DSS
DS GS
µA
—
V
= 80V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
100
-100
13
4.0
3.9
20
24
32
90
—
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
= 12V, I = 4.6A
g
gs
gd
d(on)
r
GS D
V
= 50V
DS
t
t
t
t
V
= 50V, I = 4.6A,
DD D
V = 12V, R = 7.5Ω
GS
G
ns
d(off)
f
L
+ L
S
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
371
108
3.0
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
oss
rss
GS DS
pF
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
4.6
18.4
1.2
173
863
S
A
I
SM
V
t
Q
V
ns
nC
T = 25°C, I = 4.6A, V
= 0V Ã
j
SD
rr
RR
S
GS
T = 25°C, I = 4.6A, di/dt ≤ 100A/µs
j
F
V
≤ 25V Ã
DD
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance (Per Die)
Parameter
Min Typ Max Units
Test Conditions
R
thJC
R
thJA
Junction-to-Case
Junction-to-Ambient
—
—
—
—
11.8
60
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
www.irf.com
Pre-Irradiation
IRHQ57110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ (Per Die)
1000K Rads (Si)2
Parameter
Up to 500K Rads(Si)1
Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage 100
—
4.0
100
-100
10
100
1.5
—
—
—
—
4.5
100
-100
25
V
= 0V, I = 1.0mA
DSS
GS D
V
V
Gate Threshold Voltage
2.0
—
—
—
—
V
= V , I = 1.0mA
GS
GS(th)
DS
D
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (LCC-28)
Diode Forward Voltage
V
V
= 20V
= -20 V
GSS
GSS
GS
nA
GS
I
µA
Ω
V
= 80V, V =0V
DSS
DS GS
R
DS(on)
Ã
0.226
—
0.246
V
V
V
= 12V, I = 2.9A
D
GS
GS
GS
R
DS(on)
Ã
—
—
0.27
1.2
—
—
0.29
1.2
Ω
= 12V, I = 2.9A
D
V
SD
Ã
V
= 0V, I = 4.6A
S
1. Part numbers IRHQ57110, IRHQ53110, IRHQ54110
2. Part number IRHQ58110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area (Per Die)
LET
Energy
Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
(µm)
@VGS =
0V
@VGS =
-5V
@VGS =
-10V
@VGS =
-15V
@VGS =
-20V
38 ± 5%
61 ± 5%
84 ± 5%
300 ± 7.5%
330 ± 7.5%
350 ± 10%
38 ± 7.5%
31 ± 10%
28 ± 7.5%
100
100
100
100
100
100
100
100
80
100
35
100
25
-
25
120
100
80
60
40
20
0
LET=38 ± 5%
LET=61 ± 5%
LET=84 ± 5%
0
-5
-10
-15
-20
Bias VGS (V)
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHQ57110
Pre-Irradiation
100
10
1
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
VGS
TOP
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM5.0V
BOTTOM 5.0V
10
5.0V
1
5.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 150 C
J
0.1
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
4.6A
=
I
D
°
T = 150 C
J
°
T = 25 C
J
V
= 25V
DS
20µs PULSE WIDTH
V
=12V
GS
0.1
5.0
6.0
7.0
8.0 9.0 10.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
4
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Pre-Irradiation
IRHQ57110
800
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
I
D
= 4.6A
GS
C
= C + C
iss
gs
gd ,
V
V
V
= 80V
= 50V
= 20V
DS
DS
DS
C
= C
rss
gd
C
= C + C
oss
ds
gd
600
400
200
0
C
iss
C
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
4
8
12
16
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
100
10
1
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
°
T = 150 C
J
°
T = 25 C
J
1ms
Tc = 25°C
Tj = 150°C
10ms
Single Pulse
V
= 0 V
GS
0.1
0.1
0.4
0.6
0.8
1.0
1.2
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
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5
IRHQ57110
Pre-Irradiation
RD
5.0
4.0
3.0
2.0
1.0
0.0
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
0.05
10
P
2
DM
0.02
0.01
1
t
1
t
2
Notes:
1. Duty factor D = t / t
SINGLE PULSE
1
(THERMAL RESPONSE)
2. Peak T = P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
6
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Pre-Irradiation
IRHQ57110
100
80
60
40
20
0
I
D
TOP
2.1A
2.9A
15V
BOTTOM 4.6A
DRIVER
+
L
V
DS
D.U.T
R
G
.
V
DD
-
I
A
AS
VGS
2
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
V
J
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Same Type as D.U.T.
Fig12b. UnclampedInductiveWaveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHQ57110
Footnotes:
Pre-Irradiation
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
GS
= 0 during
Á
V
= 25V, starting T = 25°C, L= 4.4mH,
J
DD
Peak I = 4.6A, V
12 volt V
applied and V
GS
DS
=12V
L
GS
irradiation per MIL-STD-750, method 1019, condition A
 I
≤ 4.6A, di/dt ≤ 300A/µs,
≤ 100V, T ≤ 150°C
J
SD
DD
Å Total Dose Irradiation with V Bias.
DS
= 0 during
V
80 volt V
applied and V
GS
DS
irradiation per MlL-STD-750, method 1019, condition A
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions — LCC-28
Q1
Q4
Q2
Q3
Q3
Q2
Q4
Q1
PAD ASSIGNMENTS
D = DRAIN
G = GATE
S = SOURCE
NC = NO CONNECTION
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 05/2015
8
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