IRHQ597110 [INFINEON]
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) 100V, Quad P-CHANNEL; 抗辐射功率MOSFET表面贴装（ LCC - 28 ） 100V ，四P- CHANNEL
| 型号： | IRHQ597110 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) 100V, Quad P-CHANNEL |
| 文件： | 总8页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢁ
PD-94210A
IRHQ597110
100V, Quad P-CHANNEL
RAD-Hard™ HEXFET®
TECHNOLOGY
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)
5
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHQ597110 100K Rads (Si)
IRHQ593110 300K Rads (Si)
0.96Ω -2.8A
0.98Ω -2.8A
LCC-28
International Rectifier’s RAD-HardTM HEXFET® MOSFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite
applications. These devices have been characterized for
both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain all
of the well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features:
n
Single Event Effect (SEE) Hardened
Low RDS(on)
n
n
n
n
n
n
n
n
n
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
Pre-Irradiation
Absolute Maximum Ratings (Per Die)
Parameter
Units
I
@ V
@ V
= -12V, T = 25°C Continuous Drain Current
-2.8
D
GS
GS
C
A
I
D
= -12V, T = 100°C Continuous Drain Current
-1.8
-11.2
12
C
I
Pulsed Drain Current À
Max. Power Dissipation
DM
@ T = 25°C
P
W
W/°C
V
D
C
Linear Derating Factor
0.1
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
GS
E
70
mJ
A
AS
I
-2.8
AR
E
Repetitive Avalanche Energy À
1.2
mJ
V/ns
AR
dv/dt
Peak Diode Recovery dv/dt
Operating Junction
Â
-7.1
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
0.89 (Typical)
For footnotes refer to the last page
www.irf.com
1
05/18/05
IRHQ597110
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) (Per Die)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
-100
—
—
V
V
= 0V, I = -1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
-0.13
—
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
-2.0
1.9
—
—
—
—
—
—
—
1.2
0.96
-4.0
—
-10
-25
Ω
V
V
= -12V, I = -2.8A
D
Ã
DS(on)
GS
GS
= -12V, I = -1.8A
D
V
S ( )
V
= V , I = -1.0mA
GS(th)
fs
DS
GS
D
Ω
g
V
> -15V, I
= -1.8A Ã
DS
V
DS
I
= -80V, V =0V
DS GS
DSS
µA
—
V
= -80V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
-100
100
11
3.0
4.2
20
24
32
90
—
V
V
= -20V
= 20V
GSS
GSS
GS
GS
nA
nC
Q
Q
Q
V
= -12V, I = -2.8A
g
gs
gd
d(on)
r
GS D
V
= -50V
DS
t
t
t
t
V
= -50V, I = -2.8A,
= -12V, R = 7.5Ω
DD
GS
D
G
V
ns
d(off)
f
L
+ L
S
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
377
102
7.0
—
—
—
V
= 0V, V
= -25V
iss
oss
rss
GS
DS
f = 1.0MHz
pF
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
-2.8
-11.2
-5.0
138
S
SM
SD
rr
A
V
nS
nC
T = 25°C, I = -2.8A, V
= 0V Ã
j
S
GS
T = 25°C, I = -2.8A, di/dt ≤ 100A/µs
j
F
Q
555
V
DD
≤ -50V Ã
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance (Per Die)
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
Junction-to-Ambient
—
—
—
—
11.8
60
thJC
thJA
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
www.irf.com
Pre-Irradiation
IRHQ597110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose IrradiationÄÅ (Per Die)
1
Parameter
100K Rads(Si)
Min
300K Rads (Si)2 Units
Test Conditions
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage -100
—
-4.0
-100
100
-100
- 2.0
—
—
—
—
-5.0
-100
100
V
V
= 0V, I = -1.0mA
D
DSS
GS
GS
V
V
Gate Threshold Voltage
- 2.0
—
= V , I = -1.0mA
GS(th)
DS
D
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
V
V
= -20V
= 20 V
GSS
GS
nA
—
—
GSS
GS
I
-10
-10
µA
V
= -80V, V =0V
DS GS
DSS
R
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source
On-State Resistance (LCC-28)
Diode Forward Voltage
Ã
—
0.916
—
0.936
Ω
V
= -12V, I = -1.8A
D
GS
GS
GS
DS(on)
R
DS(on)
Ã
—
—
0.96
-5.0
—
—
0.98
-5.0
Ω
V
= -12V, I = -1.8A
D
V
SD
Ã
V
V
= 0V, I = -2.8A
S
1. Part number IRHQ597110
2. Part number IRHQ593110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
VDS (V)
Ion
LET
MeV/(mg/cm2))
28.0
Energy
(MeV)
285
305
343
Range
(µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
Cu
Br
I
43.0
39.0
32.6
-100
-100
-60
-100
-100
—
-100
-70
—
-70
- 50
—
-60
-40
—
36.8
59.8
-120
-100
-80
Cu
Br
I
-60
-40
-20
0
0
5
10
VGS
15
20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHQ597110
Pre-Irradiation
100
10
1
100
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
VGS
TOP
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
BOTTOM -5.0V
10
-5.0V
-5.0V
1
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 150 C
J
°
T = 25 C
J
0.1
0.1
0.1
0.1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
2.5
2.0
1.5
1.0
0.5
0.0
-2.8A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
V
= -50V
DS
20µs PULSE WIDTH
V
= -12V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
5.0
6.0
7.0
8.0 9.0
10.0
T , Junction Temperature ( C)
J
-V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHQ597110
20
16
12
8
600
500
400
300
200
100
I
D
= -2.8A
V
= 0V,
f = 1MHz
gd , ds
GS
C
= C + C
gs
C
SHORTED
iss
V
V
V
=-80V
=-50V
=-20V
DS
DS
DS
C
= C
gd
rss
C
= C + C
ds
oss
gd
C
iss
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
0
1
0
2
4
6
8
10
12
10
100
Q , Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
100
10
1
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
°
T = 150 C
J
°
T = 25 C
J
1ms
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0 V
GS
0.1
0.1
1.0
2.0
3.0
4.0
5.0
6.0
1
10
100
1000
-V ,Source-to-Drain Voltage (V)
SD
-V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
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5
IRHQ597110
Pre-Irradiation
RD
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
90%
V
DS
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
Notes:
1. Duty factor D = t / t
SINGLE PULSE
1
(THERMAL RESPONSE)
2. Peak T = P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
6
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Pre-Irradiation
IRHQ597110
L
V
DS
150
120
90
60
30
0
I
D
TOP
-1.3A
-1.8A
BOTTOM -2.8A
D.U.T
.
R
G
V
DD
A
I
AS
VGS
-20V
DRIVER
0.01
Ω
t
p
15V
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
I
AS
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
t
p
V
(BR)DSS
Fig12b. UnclampedInductiveWaveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
Q
G
-12V
.3µF
-12V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHQ597110
Footnotes:
Pre-Irradiation
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
GS
applied and V = 0 during
DS
Á V
= - 25V, starting T = 25°C, L= 17.8mH,
J
DD
Peak I = - 2.8A, V
-12 volt V
GS
irradiation per MIL-STD-750, method 1019, condition A
=-12V
L
GS
 I
SD
≤ - 2.8A, di/dt ≤ - 263A/µs,
≤ -100V, T ≤ 150°C
J
Å Total Dose Irradiation with V
Bias.
DS
applied and V = 0 during
GS
V
DD
-80 volt V
DS
irradiation per MlL-STD-750, method 1019, condition A
Case Outline and Dimensions — LCC-28
Q1
Q4
Q2
Q3
Q3
Q2
Q4
Q1
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IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 05/2005
8
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