IRL2910LPBF [INFINEON]
Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN;
| 型号： | IRL2910LPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN 晶体 晶体管 开关 脉冲 局域网 |
| 文件： | 总8页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91375B
IRL2910
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 100V
RDS(on) = 0.026Ω
G
ID = 55A
l Fully Avalanche Rated
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedizeddevicedesignthatHEXFETPowerMOSFETs
arewellknownfor,providesthedesignerwithanextremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistanceandlowpackagecostoftheTO-220contribute
to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
55
39
190
A
PD @TC = 25°C
Power Dissipation
200
W
W/°C
V
Linear Derating Factor
1.3
VGS
EAS
IAR
Gate-to-Source Voltage
± 16
520
Single Pulse Avalanche Energy
Avalanche Currentꢀ
mJ
A
29
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
20
mJ
V/ns
5.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
0.75
–––
62
Units
RθJC
RθCS
RθJA
–––
0.50
–––
°C/W
°C/W
°C/W
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
5/13/98
IRL2910
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
100 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.026
––– ––– 0.030
––– ––– 0.040
VGS = 10V, ID = 29A
VGS = 5.0V, ID = 29A
VGS = 4.0V, ID = 24A
VDS = VGS, ID = 250µA
VDS = 50V, ID = 29A
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
1.0
28
––– 2.0
––– –––
V
S
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 140
––– ––– 20
––– ––– 81
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
µA
nA
IDSS
IGSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 16V
VGS = -16V
ID = 29A
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 80V
VGS = 5.0V, See Fig. 6 and 13
–––
11 –––
VDD = 50V
––– 100 –––
ID = 29A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
49 –––
55 –––
RG = 1.4Ω, VGS = 5.0V
RD = 1.7Ω, See Fig. 10
Between lead,
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
––– 4.5 –––
––– 7.5 –––
6mm (0.25in.)
nH
pF
G
from package
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 3700 –––
––– 630 –––
––– 330 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
––– –––
––– –––
55
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
190
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 240 350
––– 1.8 2.7
V
TJ = 25°C, IS = 29A, VGS = 0V
ns
TJ = 25°C, IF = 29A
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 1.2mH
RG = 25Ω, IAS = 29A. (See Figure 12)
ISD ≤ 29A, di/dt ≤ 490A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
,
IRL2910
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
12V
12V
10V
10V
8.0V
6.0V
4.0V
3.0V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
BOTTOM 2.5V
2.5V
2.5V
20µs PULSE W IDTH
20µs PULSE W IDTH
T
= 25°C
T
= 175°C
J
J
1
1
A
A
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1000
100
10
I
= 48A
D
TJ = 25 °C
TJ = 1 7 5 °C
V D S = 5 0 V
2 0 µs P U LS E W ID TH
V
= 10V
G S
1
A
6.0A
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
T
J
, Junction Tem perature (°C)
V
, Ga te -to-Source Volta ge (V)
G S
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
IRL2910
6000
15
12
9
V
C
C
C
= 0V ,
f = 1M Hz
I
= 29A
G S
iss
D
= C
= C
= C
+ C
+ C
,
C
SHORTE D
gs
gd
ds
gd
ds
V
V
V
= 80V
= 50V
= 20V
D S
D S
D S
rss
oss
5000
C
iss
gd
4000
3000
2000
1000
0
6
C
C
oss
rss
3
FOR TE ST CIRCUIT
SE E FIG URE 13
0
A
A
1
10
100
0
40
80
120
160
200
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
OPE RATION IN THIS AREA LIM ITE D
BY R DS(on)
10µs
100
10
1
100
100µs
1m s
T
= 175°C
J
T
= 25°C
J
10m s
T
T
= 25°C
= 175°C
C
J
V
= 0V
G S
S ingle Pulse
A
10
A
0.4
0.8
1.2
1.6
2.0
1
10
100
1000
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
IRL2910
60
50
40
30
20
10
0
RD
VDS
VGS
D.U.T.
RG
+VDD
-
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
P
DM
t
1
0.02
t
2
SINGLE PULSE
(THERMAL RESPONSE)
0.01
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRL2910
1400
1200
1000
800
600
400
200
0
I
D
TOP
12A
20A
29A
1 5V
BO TTO M
DRIVER
L
V
G
DS
D.U.T
R
+
V
D D
-
I
A
AS
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
= 25V
50
DD
A
25
75
100
125
150
175
Starting T , Junction Tem perature (°C)
V
(BR)DSS
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
5.0 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRL2910
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRL2910
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
- B
-
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A
-
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
LEAD ASSIGNMENTS
1
2
3
4
- GATE
1
2
3
- DRAIN
- SOURCE
- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B
A
M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIM ENSIONING
&
TOLERANCING PER ANSI Y14.5M, 1982.
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK LEAD M EASUREM ENTS DO NOT INCLUDE BURRS.
CONTROLLING DIMENSION : INCH
&
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IR F1010
A
W ITH ASSEM BLY
LOT C ODE 9B1M
INTERNATIONAL
PART NU M BER
RECTIFIER
IR F1010
LOGO
9246
1M
9B
D ATE COD E
ASSEMBLY
(YYW W )
LOT CO DE
YY
= YEAR
= W EEK
W W
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
5/98
相关型号：
IRL2910STRL
Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
INFINEON
IRL2910STRRPBF
Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
IRL3102-003
Power Field-Effect Transistor, 61A I(D), 20V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
INFINEON
IRL3102-006
Power Field-Effect Transistor, 61A I(D), 20V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
INFINEON
©2020 ICPDF网 联系我们和版权申明