IRL2910S [INFINEON]
HEXFET POWER MOSFET; HEXFET功率MOSFET型号: | IRL2910S |
厂家: | Infineon |
描述: | HEXFET POWER MOSFET |
文件: | 总10页 (文件大小:336K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 91376C
IRL2910S/L
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Surface Mount
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l Fast Switching
D
VDSS = 100V
RDS(on) = 0.026Ω
G
l Fully Avalanche Rated
Description
ID = 55A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedizeddevicedesignthatHEXFETPowerMOSFETs
arewellknownfor,providesthedesignerwithanextremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
itslowinternalconnectionresistanceandcandissipateup
to 2.0W in a typical surface mount application.
The through-hole version (IRL2910L) is available for low-
profile applications.
2
TO-262
D
Pak
Absolute Maximum Ratings
Parameter
Max.
55
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10Vꢀ
Continuous Drain Current, VGS @ 10Vꢀ
Pulsed Drain Current ꢀ
39
A
190
3.8
200
1.3
± 16
520
29
PD @TA = 25°C
PD @TC = 25°C
Power Dissipation
W
W
Power Dissipation
Linear Derating Factor
W/°C
V
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energyꢀ
Avalanche Current
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ꢀ
Operating Junction and
20
mJ
V/ns
5.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
0.75
Units
RθJC
RθJA
°C/W
Junction-to-Ambient ( PCB Mounted,steady-state)**
40
10/09/03
IRL2910S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
100
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.12 V/°C Reference to 25°C, ID = 1mAꢀ
0.026
0.030
0.040
VGS = 10V, ID = 29A
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS = 5.0V, ID = 29A
VGS = 4.0V, ID = 24A
VDS = VGS, ID = 250µA
VDS = 50V, ID = 29Aꢀ
VGS(th)
gfs
Gate Threshold Voltage
1.0
28
2.0
V
S
Forward Transconductance
25
250
100
-100
140
20
81
V
DS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
GS = 16V
µA
nA
IDSS
IGSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
V
VGS = -16V
ID = 29A
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 80V
VGS = 5.0V, See Fig. 6 and 13 ꢀ
11
VDD = 50V
100
ID = 29A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
49
55
RG = 1.4Ω, VGS = 5.0V
RD = 1.7Ω, See Fig. 10 ꢀ
Between lead,
LS
Internal Source Inductance
7.5
nH
pF
and center of die contact
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
3700
630
330
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
= 1.0MHz, See Fig. 5ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
55
A
G
ISM
Pulsed Source Current
(Body Diode) ꢀ
integral reverse
190
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
1.3
240 350
1.8 2.7
V
TJ = 25°C, IS = 29A, VGS = 0V
TJ = 25°C, IF = 29A
ns
Qrr
ton
µC di/dt = 100A/µs ꢀ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 1.2mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Uses IRL2910 data and test conditions
RG = 25Ω, IAS = 29A. (See Figure 12)
ISD ≤ 29A, di/dt ≤ 490A/µs, VDD ≤ V(BR)DSS
,
TJ ≤ 175°C
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRL2910S/L
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
12V
10V
8.0V
6.0V
4.0V
3.0V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
BOTTOM 2.5V
2.5V
2.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
= 25°C
T
= 175°C
J
J
1
0.1
1
0.1
A
A
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1000
100
10
I
= 48A
D
TJ = 25°C
T = 175°C
J
VDS = 50V
20µs PULSE WIDTH
6.0A
V
= 10V
GS
1
A
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
T
, Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
IRL2910S/L
15
12
9
6000
I
= 29A
D
V
C
C
C
= 0V,
f = 1MHz
GS
iss
rss
oss
V
V
V
= 80V
= 50V
= 20V
= C + C
,
C
SHORTED
DS
DS
DS
gs
gd
ds
= C
gd
5000
4000
3000
2000
1000
0
C
iss
= C + C
ds
gd
6
C
oss
C
rss
3
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
200
A
0
40
80
120
160
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10µs
100µs
100
T = 175°C
J
1ms
T = 25°C
J
10ms
T
T
= 25°C
= 175°C
C
J
Single Pulse
V
GS
= 0V
A
10
1
A
1000
0.4
0.8
1.2
1.6
2.0
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
IRL2910S/L
50
40
30
20
10
0
RD
VDS
VGS
D.U.T.
RG
+VDD
-
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
A
25
50
75
100
125
150
175
T , Case Temperature (°C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
0.02
P
DM
0.1
t
1
t
2
Notes:
1. Duty factor D = t / t
0.01
SINGLE PULSE
(THERMAL RESPONSE)
2
thJC
1
1
2. Peak T = P
J
x Z
+ T
C
DM
A
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRL2910S/L
1400
1200
1000
800
600
400
200
0
I
D
TOP
12A
20A
BOTTOM 29A
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
= 25V
50
DD
A
175
25
75
100
125
150
V
(BR)DSS
Starting T , Junction Temperature (°C)
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
5.0 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
IRL2910S/L
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRL2910S/L
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
F530S
DATE CODE
YEAR 0 = 2000
WEE K 02
AS S E MB LY
LOT CODE
LINE L
For GB Production
THIS IS AN IRF530S WITH
LOT CODE 8024
PART NUMBER
DATE CODE
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
F530S
LOT CODE
IRL2910S/L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
TO-262 Part Marking Information
EXA
MPLE:
THIS
IS AN IRL3103L
LOT CODE 178
PART NUMBER
9
INTERNATIONAL
RECTIFI
ASSEMBLED ON WW19, 1
997
IN THE ASSEMBLY LINE "C"
ER
LOGO
DATE CODE
YEAR 7 = 1997
WEEK 19
ASSEMB
LY
LOT CODE
L
INE C
IRL2910S/L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/03
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