IRL5Y024CM [INFINEON]
HEXFET POWER MOSFET THRU-HOLE (TO-257AA); HEXFET功率MOSFET直通孔（ TO- 257AA ）
| 型号： | IRL5Y024CM |
| 厂家： | 
Infineon |
| 描述： | HEXFET POWER MOSFET THRU-HOLE (TO-257AA) |
| 文件： | 总7页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94018A
HEXFET® POWER MOSFET
THRU-HOLE (TO-257AA)
IRL5Y024CM
55V, N-CHANNEL
Product Summary
Part Number
BV
RDS(on)
ID
DSS
IRL5Y024CM
55V
0.069Ω
17A
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniquestoachievethelowestpossibleon-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
providesthedesignerwithanextremelyefficientdevice
for use in a wide variety of applications.
TO-257AA
Features:
n
n
n
n
n
n
n
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 10V, T = 25°C
Continuous Drain Current
17
11
D
GS
C
A
I
= 10V, T = 100°C Continuous Drain Current
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
68
DM
@ T = 25°C
P
35
W
W/°C
V
D
C
Linear Derating Factor
0.28
±16
49
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
mJ
A
AS
I
11
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
3.5
mJ
V/ns
AR
dv/dt
4.0
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Lead Temperature
Weight
300 (0.063in./1.6mm from case for 10sec)
4.3 (Typical)
For footnotes refer to the last page
www.irf.com
1
10/27/00
IRL5Y024CM
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
55
—
—
—
—
V
V
= 0V, I = 250µA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.06
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
—
—
—
—
—
—
—
—
—
—
0.069
0.085
0.109
2.0
V
= 10V, I = 11A
GS D
DS(on)
➀
Ω
V
V
= 5.0V, I = 11A
= 4.0V, I = 9.0A
D
GS
GS
D
V
Gate Threshold Voltage
1.0
6.0
—
V
V
= V , I = 250µA
GS(th)
fs
DS
GS
D
Ω
g
Forward Transconductance
Zero Gate Voltage Drain Current
—
25
S ( )
V
= 25V, I
= 11A ➀
DS
V
DS
I
= 55V ,V =0V
DS GS
DSS
µA
—
250
V
= 44V,
DS
= 0V, T =125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
15
3.7
8.5
11
V
= 16V
GSS
GSS
GS
nA
nC
ns
V
GS
= -16V
Q
Q
Q
V
=5.0V, I = 11A
g
gs
gd
d(on)
r
GS D
V
= 44V
DS
t
t
t
t
V
DD
V
= 28V, I = 11A,
=5.0V, R = 12Ω
GS G
D
133
25
Turn-Off Delay Time
FallTime
Total Inductance
d(off)
66
—
f
L
+ L
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
S
D
nH
pF
C
C
C
Input Capacitance
—
—
—
520
140
57
—
—
—
V
= 0V, V
DS
f = 1.0MHz
= 25V
iss
GS
Output Capacitance
oss
rss
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
17
68
S
A
SM
V
t
1.3
70
V
ns
T = 25°C, I = 11A, V
= 0V ➀
j
SD
rr
S
GS
Reverse Recovery Time
T = 25°C, I = 11A, di/dt ≥ 100A/µs
j
F
Q
Reverse Recovery Charge
120
nC
V
DD
≤ 30V ➀
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
3.57
°C/W
thJC
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
IRL5Y024CM
100
10
1
100
10
1
VGS
15V
12V
10V
VGS
15V
12V
10V
TOP
TOP
8.0V
8.0V
5.0V
4.0V
3.0V
5.0V
4.0V
3.0V
BOTTOM 2.5V
BOTTOM 2.5V
2.5V
2.5V
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
2.5
17A
=
I
D
°
T = 25 C
J
2.0
1.5
1.0
0.5
0.0
°
T = 150 C
J
V
= 15V
20µs PULSE WIDTH
DS
V
= 10V
GS
2
4
6
8
10 12
-60 -40 -20
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
°
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
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3
IRL5Y024CM
1000
800
600
400
200
15
12
9
V
= 0V,
f = 1MHz
C SHORTED
ds
I
D
= 11A
GS
C
= C + C
iss
gs
gd
gd ,
V
V
V
= 44V
= 27V
= 11V
DS
DS
DS
C
= C
rss
C
= C + C
gd
oss
ds
C
iss
6
C
oss
3
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
0
10
100
0
4
8
12
16
20
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
100
10
1
1000
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
°
T = 150 C
100
10
1
J
°
T = 25 C
J
100µs
1ms
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0 V
GS
0.1
0.1
0.2
0.8
1.4
2.0
2.6
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
4
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IRL5Y024CM
RD
20
16
12
8
VDS
VGS
D.U.T.
RG
+VDD
-
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
4
V
DS
90%
0
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
0.1
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x
Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRL5Y024CM
100
80
60
40
20
0
I
D
TOP
5.0A
7.0A
BOTTOM 11A
15V
DRIVER
L
V
D S
D.U .T
.
R
G
+
V
D D
-
I
A
AS
25.0V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
V
(BR)D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
5.0V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRL5Y024CM
Footnotes:
Repetitive Rating; Pulse width limited by
I
≤ 11A, di/dt ≤ 222 A/µs,
SD
maximum junction temperature.
V
≤ 55V, T ≤ 150°C
J
DD
Pulse width ≤ 400 µs; Duty Cycle ≤ 2%
V
= 25 V, Starting T = 25°C, L= 0.8mH
J
DD
Peak I
= 11A,
R = 25Ω
G
AS
Case Outline and Dimensions —TO-257AA
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 10/00
www.irf.com
7
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