IRLML2502GPBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRLML2502GPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96163
IRLML2502GPbF
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l N-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
VDSS = 20V
RDS(on) = 0.045Ω
l Lead-Free
l Halogen-Free
Description
These N-Channel MOSFETs from International Rectifier
utilizeadvancedprocessingtechniquestoachieveextremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
thatHEXFET® powerMOSFETsarewellknownfor,provides
the designer with an extremely efficient and reliable device
for use in battery and load management.
Micro3™
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce
a HEXFET Power MOSFET with the industry's smallest
footprint. This package, dubbed the Micro3™, is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro3 allows it
to fit easily into extremely thin application environments
suchasportableelectronicsandPCMCIAcards.Thethermal
resistance and power dissipation are the best available.
Absolute Maximum Ratings
Parameter
Drain- Source Voltage
Max.
20
Units
V
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
4.2
3.4
A
33
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
1.25
W
Power Dissipation
0.8
Linear Derating Factor
0.01
W/°C
V
VGS
Gate-to-Source Voltage
± 12
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
75
100
°C/W
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1
07/22/08
IRLML2502GPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
20 ––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.01 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.035 0.045
––– 0.050 0.080
0.60 ––– 1.2
5.8 ––– –––
––– ––– 1.0
––– ––– 25
––– ––– -100
––– ––– 100
VGS = 4.5V, ID = 4.2A
VGS = 2.5V, ID = 3.6A
VDS = VGS, ID = 250µA
VDS = 10V, ID = 4.0A
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
VDS = 16V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
µA
nA
VDS = 16V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -12V
IGSS
VGS = 12V
ID = 4.0A
Qg
––– 8.0
12
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 1.8 2.7
––– 1.7 2.6
––– 7.5 –––
––– 10 –––
––– 54 –––
––– 26 –––
––– 740 –––
––– 90 –––
––– 66 –––
nC VDS = 10V
VGS = 5.0V
VDD = 10V
ID = 1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6Ω
RD = 10Ω
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
pF
VDS = 15V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
1.3
33
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– 1.2
V
TJ = 25°C, IS = 1.3A, VGS = 0V
––– 16
––– 8.6
24
13
ns
TJ = 25°C, IF = 1.3A
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRLML2502GPbF
100
10
1
100
10
1
VGS
VGS
TOP
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
TOP
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
BOTTOM 2.25V
BOTTOM 2.25V
2.25V
2.25V
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
T = 150 C
J
°
°
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
100
4.0A
=
I
D
1.5
°
T = 25 C
J
1.0
0.5
0.0
°
T = 150 C
J
V
= 15V
DS
20µs PULSE WIDTH
V
=4.5V
GS
10
2.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
2.4
2.8
3.2 3.6
4.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRLML2502GPbF
10
8
1200
I
D
=
4.0A
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
C
= C + C
iss
gs
gd ,
V
= 10V
DS
C
= C
rss
gd
1000
800
600
400
200
0
C
= C + C
oss
ds
gd
C
iss
6
4
2
C
oss
C
rss
0
0
4
8
12
16
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
10
1
°
T = 150 C
J
10us
100us
1ms
°
T = 25 C
J
10ms
°
T = 25 C
A
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1.2
0.1
0.1
0.4
0.1
1
10
100
0.6
0.8
1.0
1.4
V , Drain-to-Source Voltage (V)
DS
V
,Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRLML2502GPbF
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
Fig 9. Maximum Drain Current Vs.
Case Temperature
1000
100
10
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRLML2502GPbF
0.30
0.20
0.10
0.00
0.05
VGS = 2.5V
0.04
Id = 4.0A
0.03
0.02
VGS = 4.5V
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
0
10
20
30
40
V
Gate -to -Source Voltage ( V )
i
, Drain Current ( A )
GS,
D
Fig 11. On-Resistance Vs. Gate Voltage
Fig 12. On-Resistance Vs. Drain Current
6
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IRLML2502GPbF
Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
DIMENSIONS
A
5
6
D
MILLIMETERS
INCHES
SYMBOL
MIN
0.89
0.01
0.88
0.30
0.08
2.80
2.10
1.20
0.95
1.90
0.40
0.54
0.25
0
MAX
1.12
0.10
1.02
0.50
0.20
3.04
2.64
1.40
BSC
BSC
0.60
REF
BSC
8
MIN
MAX
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
L2
0.0004
3
E
6
E1
0.15 [0.006]
M
C
B A
1
2
e
B
5
A
e1
A2
4
H
C
L1
c
0.10 [0.004]
C
L2
REF
BSC
8
A1
3X
b
3X L
7
0.20 [0.008]
M
C
B A
0
Recommended Footprint
NOTES:
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
0.972
0.950
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
2.742
0.802
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
1.900
Micro3 (SOT-23 / TO-236AB) Part Marking Information
Micro3 / SOT-23 Package Marking
Y = YEAR
W = WEEK
PART NUMBER
A YW LC
LOT
CODE
HALOGEN FREE
INDICATOR
PART NUMBER CODE REFERENCE:
A = IRLML2402
B =IRLML2803
C = IRLML2402
D = IRLML5103
E = IRLML6402
F = IRLML6401
G = IRLML2502
H = IRLML5203
Note: A line above the work week
(as shown here) indicates Lead-free
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
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7
IRLML2502GPbF
Micro3™ Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
1.32 ( .051 )
1.12 ( .045 )
1.85 ( .072 )
1.65 ( .065 )
4.1 ( .161 )
3.9 ( .154 )
TR
3.55 ( .139 )
3.45 ( .136 )
8.3 ( .326 )
7.9 ( .312 )
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/2008
8
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相关型号：
IRLML2502GTRPBF
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3
INFINEON
IRLML2502PBF
Ultra Low On-Resistance SOT-23 Footprint N-Channel MOSFET Available in Tape and Reel
TYSEMI
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