IRLML5103PBF_11 [INFINEON]
Lead-Free, Fast Switching, Available in Tape and Reel; 无铅，快速开关，可在磁带和卷轴
| 型号： | IRLML5103PBF_11 |
| 厂家： | 
Infineon |
| 描述： | Lead-Free, Fast Switching, Available in Tape and Reel |
| 文件： | 总8页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94894A
IRLML5103PbF
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l P-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
G
S
1
2
VDSS = -30V
3
D
RDS(on) = 0.60Ω
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
A customized leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This
package, dubbed the Micro3, is ideal for applications
whereprintedcircuitboardspaceisatapremium. Thelow
profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards.
Micro3™
Absolute Maximum Ratings
Parameter
Max.
-0.76
-0.61
-4.8
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
A
PD@TA = 25°C
Power Dissipation
540
mW
mW/°C
V
Linear Derating Factor
4.3
VGS
Gate-to-Source Voltage
± 20
-5.0
dv/dt
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
V/ns
°C
TJ,TSTG
-55 to + 150
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Typ.
Max.
230
Units
°C/W
RθJA
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1
12/14/11
IRLML5103PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-30
-0.029 V/°C Reference to 25°C, ID = -1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250µA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
0.60
1.0
-1.0
0.44
-1.0
-25
-100
100
3.4 5.1
VGS = -10V, ID = -0.60A
VGS = -4.5V, ID = -0.30A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -0.30A
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = -20V
RDS(ON)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
Qg
ID = -0.60A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
0.52 0.78 nC VDS = -24V
1.1 1.7
10
8.2
23
16
75
VGS = -10V, See Fig. 6 and 9
VDD = -15V
ID = -0.60A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.2Ω
RD = 25Ω, See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
37 pF VDS = -25V
18 = 1.0MHz, See Fig. 5
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
S
IS
-0.54
-4.8
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
-1.2
26 39
20 30
V
TJ = 25°C, IS = -0.60A, VGS = 0V
ns TJ = 25°C, IF = -0.60A
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
ISD ≤ -0.60A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
Surface mounted on FR-4 board, t ≤ 5sec.
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2
IRLML5103PbF
10
10
VGS
- 15V
- 10V
VGS
TOP
TOP
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
BOTTOM - 3.0V
1
1
-3.0V
-3.0V
20μs PULSE WIDTH
20μs PULSE WIDTH
T
= 25°C
T
= 150°C
J
J
A
A
10
0.1
0.1
0.1
1
10
0.1
1
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.0
1.5
1.0
0.5
0.0
I
= -0.60A
D
TJ = 25°C
TJ = 150°C
1
VDS = -10V
20μs PULSE WIDTH
V
= -10V
GS
0.1
A
8.0A
3.0
4.0
5.0
6.0
7.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
T , Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRLML5103PbF
140
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
I
= -0.60A
GS
iss
rss
oss
D
= C + C
,
C
SHORTED
gs
gd
ds
V
V
= -24V
= -15V
DS
DS
= C
gd
120
100
80
60
40
20
0
C
C
iss
= C + C
ds
gd
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
0.0
A
A
1
10
100
1.0
2.0
3.0
4.0
5.0
-V , Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
10
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100μs
1ms
T = 150°C
J
1
1
T = 25°C
J
T
= 25°C
= 150°C
A
10ms
T
J
V
= 0V
GS
Single Pulse
A
0.1
0.1
A
100
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
10
-V , Source-to-Drain Voltage (V)
-V , Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
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4
IRLML5103PbF
RD
VDS
Q
G
VGS
-10V
D.U.T.
Q
Q
GD
GS
RG
-
+
VDD
V
G
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
V
DS
50KΩ
.2μF
90%
12V
.3μF
-
V
+
DS
D.U.T.
V
GS
10%
-3mA
V
GS
t
t
r
t
t
f
d(on)
d(off)
I
I
D
G
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
1000
D = 0.50
100
0.20
0.10
0.05
10
0.02
0.01
P
2
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
1
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRLML5103PbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
**
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
*
VDD
VGS
*
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
]
[
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
[
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 13. For P-Channel HEXFETS
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IRLML5103PbF
Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
DIMENSIONS
A
5
6
D
MILLIMETERS
INCHES
SYMBOL
MIN
0.89
0.01
0.88
0.30
0.08
2.80
2.10
1.20
0.95
1.90
0.40
0.54
0.25
0
MAX
1.12
0.10
1.02
0.50
0.20
3.04
2.64
1.40
BSC
BSC
0.60
REF
BSC
8
MIN
MAX
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
L2
0.0004
3
E
6
E1
0.15 [0.006]
M
C
B A
1
2
e
B
5
A
e1
A2
4
H
C
L1
c
0.10 [0.004]
C
L2
REF
BSC
8
A1
3X
b
3X L
7
0.20 [0.008]
M
C
B A
0
Recommended Footprint
NOTES:
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
0.972
0.950
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
2.742
0.802
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
1.900
Micro3 (SOT-23 / TO-236AB) Part Marking Information
Micro3 / SOT-23 Package Marking
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
WOR K
WE EK
YEAR
Y
W
Y = YEAR
W = WEEK
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
PART NUMBER
D
A YW LC
LOT
CODE
HALOGEN FREE
INDICATOR
24
25
26
X
Y
Z
PART NUMBER CODE REFERENCE:
W= (27-52) IF PRECEDED BY ALETTER
WOR K
A = IRLML2402
B =IRLML2803
C = IRLML2402
D = IRLML5103
E = IRLML6402
F = IRLML6401
G = IRLML2502
H = IRLML5203
YEAR
Y
WE EK
W
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
27
28
29
30
A
B
C
D
F
G
H
J
Note: A line above the work week
(as shown here) indicates Lead-free
K
50
51
52
X
Y
Z
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
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7
IRLML5103PbF
Micro3™ Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
1.32 ( .051 )
1.12 ( .045 )
1.85 ( .072 )
1.65 ( .065 )
4.1 ( .161 )
3.9 ( .154 )
TR
3.55 ( .139 )
3.45 ( .136 )
8.3 ( .326 )
7.9 ( .312 )
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101N.Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 12/2011
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8
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