IRLML6302PBF_07 [INFINEON]
technology, Ultra Low On-Resistance, P-Channel MOSFET; 技术，超低导通电阻， P沟道MOSFET
| 型号： | IRLML6302PBF_07 |
| 厂家： | 
Infineon |
| 描述： | technology, Ultra Low On-Resistance, P-Channel MOSFET |
| 文件： | 总8页 (文件大小：285K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94947B
IRLML6302PbF
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l P-Channel MOSFET
l SOT-23 Footprint
VDSS = -20V
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
RDS(on) = 0.60Ω
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
A customized leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This
package, dubbed the Micro3, is ideal for applications
where printed circuit board space is at a premium. The
low profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards.
Micro3TM
Absolute Maximum Ratings
Parameter
Max.
-0.78
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
-0.62
A
-4.9
PD@TA = 25°C
Power Dissipation
540
mW
mW/°C
V
Linear Derating Factor
4.3
VGS
Gate-to-Source Voltage
± 12
dv/dt
TJ,TSTG
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
-5.0
V/ns
°C
-55 to + 150
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Typ.
Max.
230
Units
°C/W
RθJA
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1
08/27/07
IRLML6302PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-20
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient -4.9 mV/°C Reference to 25°C, ID = -1mA
0.60
0.90
-0.70 -1.5
0.56
-1.0
-25
-100
100
2.4 3.6
0.56 0.84
1.0 1.5
13
18
22
22
97
53
28
VGS = -4.5V, ID = -0.61A
VGS = -2.7V, ID = -0.31A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -0.31A
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 125°C
VGS = -12V
RDS(ON)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 12V
Qg
ID = -0.61A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC VDS = -16V
VGS = -4.5V, See Fig. 6 and 9
VDD = -10V
RiseTime
ID = -0.61A
ns
pF
td(off)
tf
Turn-Off Delay Time
FallTime
RG = 6.2Ω
RD = 16Ω, See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
VDS = -15V
Reverse Transfer Capacitance
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
-0.54
A
-4.9
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– -1.2
V
TJ = 25°C, IS = -0.61A, VGS = 0V
––– 35
––– 26
53
39
ns
TJ = 25°C, IF = -0.61A
Qrr
nC di/dt = -100A/µs
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 5sec.
Repetitive rating; pulse width
limited by max. junction temperature. ( See fig. 11 )
ISD ≤ -0.61A, di/dt ≤ 76A/µs, VDD≤V(BR)DSS
TJ ≤ 150°C
,
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2
IRLML6302PbF
10
10
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
TOP
TOP
BOTTOM - 1.5V
BOTTOM - 1.5V
1
1
0.1
0.1
-1.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
= 25°C
-1.5V
T
= 150°C
T
J
J
A
0.01
0.01
A
0.1
1
10
0.1
1
10
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
10
2.0
1.5
1.0
0.5
0.0
I
= -0.61A
D
TJ = 25°C
TJ = 150°C
1
0.1
VDS = -10V
20µs PULSE WIDTH
V
= -4.5V
GS
0.01
A
4.5A
1.5
2.0
2.5
3.0
3.5
4.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
T , Junction Temperature (°C)
-VGS , Gate-to-Source Voltage (V)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRLML6302PbF
180
10
8
V
C
C
C
= 0V,
f = 1MHz
I
V
= -0.61A
D
DS
GS
iss
rss
oss
= C + C
,
C
SHORTED
= -16V
gs
gd
gd
ds
160
140
120
100
80
= C
= C + C
ds
gd
C
C
iss
oss
6
4
C
rss
60
40
2
20
FOR TEST CIRCUIT
SEE FIGURE 9
0
0
0.0
A
A
1
10
100
1.0
2.0
3.0
4.0
-V , Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
10
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100µs
1ms
1
T = 150°C
J
1
T = 25°C
J
0.1
10ms
T
= 25°C
= 150°C
A
T
J
V
= 0V
Single Pulse
GS
A
0.01
0.1
A
0.4
0.6
0.8
1.0
1.2
1.4
1
10
100
-V , Source-to-Drain Voltage (V)
-V , Drain-to-Source Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
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4
IRLML6302PbF
RD
VDS
Q
Q
G
VGS
-4.5V
D.U.T.
Q
RG
GS
GD
-
+
VDD
V
G
-4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 10a. Switching Time Test Circuit
Fig 9a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
V
DS
50KΩ
90%
.2µF
12V
.3µF
-
V
+
DS
D.U.T.
10%
V
GS
V
GS
-3mA
t
t
r
t
t
f
d(on)
d(off)
I
I
D
G
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
1000
D = 0.50
100
10
1
0.20
0.10
0.05
0.02
0.01
P
2
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T = P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRLML6302PbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
**
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
*
VDD
VGS
*
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
[
DD
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
[
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 13. For P-Channel HEXFETS
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6
IRLML6302PbF
Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
Micro3 (SOT-23 / TO-236AB) Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
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7
IRLML6302PbF
Micro3™ Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
1.32 ( .051 )
1.12 ( .045 )
1.85 ( .072 )
1.65 ( .065 )
4.1 ( .161 )
3.9 ( .154 )
TR
3.55 ( .139 )
3.45 ( .136 )
8.3 ( .326 )
7.9 ( .312 )
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 08/2007
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8
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