IRLMS2002PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRLMS2002PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 95675
IRLMS2002PbF
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 2.5V Rated
A
1
2
6
D
D
D
VDSS = 20V
5
D
3
4
l Lead-Free
G
S
RDS(on) = 0.030Ω
Top View
Description
These N-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The Micro6™ package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It'suniquethermaldesignandRDS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
Micro6™
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain- Source Voltage
20
V
ID @ TA = 25°C
ID @ TA= 70°C
IDM
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
6.5
5.2
A
20
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
2.0
W
Power Dissipation
1.3
Linear Derating Factor
0.016
± 12
W/°C
V
VGS
Gate-to-Source Voltage
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
62.5
Units
°C/W
RθJA
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1
1/18/05
IRLMS2002PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
20 ––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.016 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.030
––– ––– 0.045
0.60 ––– 1.2
13 ––– –––
––– ––– 1.0
––– ––– 25
––– ––– -100
––– ––– 100
VGS = 4.5V, ID = 6.5A
GS = 2.5V, ID = 5.2A
RDS(on)
Static Drain-to-Source On-Resistance
Ω
V
VGS(th)
gfs
Gate Threshold Voltage
V
S
VDS = VGS, ID = 250µA
VDS = 10V, ID = 6.5A
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 70°C
VGS = -12V
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = 12V
Qg
––– 15
22
ID = 6.5A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 2.2 3.3
––– 3.5 5.3
––– 8.5 –––
––– 11 –––
––– 36 –––
––– 16 –––
––– 1310 –––
––– 150 –––
––– 36 –––
nC VDS = 10V
VGS = 5.0V
VDD = 10V
ID = 1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
RD = 10Ω
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
pF
VDS = 15V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
2.0
20
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– 1.2
V
TJ = 25°C, IS = 1.7A, VGS = 0V
––– 19
––– 13
29
20
ns
TJ = 25°C, IF = 1.7A
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRLMS2002PbF
100
10
1
100
10
1
VGS
VGS
TOP
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
TOP
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
BOTTOM 1.50V
BOTTOM1.50V
1.50V
1.50V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
°
T = 150 C
J
T = 25 C
J
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
5.3A
=
I
D
°
T = 25 C
J
1.5
1.0
0.5
0.0
°
T = 150 C
J
10
V
= 15V
20µs PULSE WIDTH
DS
V
=4.5V
GS
1
1.5
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
2.0
2.5
3.0 3.5
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRLMS2002PbF
2000
10
8
V
= 0V,
f = 1MHz
C SHORTED
ds
6.5A
=
I
D
GS
C
= C + C
iss
gs
gd ,
V
= 10V
DS
C
= C
rss
gd
C
= C + C
1600
1200
800
400
0
oss
ds
gd
C
iss
6
4
2
C
C
oss
rss
0
0
4
8
12
16
20
24
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10
1ms
°
T = 25 C
J
10ms
°
T = 25 C
A
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1
0.1
0.1
0.4
1
10
100
0.6
0.8
1.0
1.2
V , Drain-to-Source Voltage (V)
DS
V
,Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRLMS2002PbF
0.20
0.10
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0.00
Id = 250µA
-0.10
-0.20
-0.30
-0.40
-50
-25
0
25
50
75
100 125 150
25
50
75
100
125
150
°
T , Case Temperature ( C)
T
, Temperature ( °C )
C
J
Fig 9. Maximum Drain Current Vs.
Fig 10. Typical Vgs(th) Variance Vs.
Case Temperature
Juction Temperature
100
D = 0.50
0.20
0.10
0.05
10
P
2
DM
0.02
0.01
1
t
1
t
2
Notes:
1. Duty factor D =
2. Peak T = P
J
SINGLE PULSE
t / t
1
x Z
(THERMAL RESPONSE)
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRLMS2002PbF
0.10
0.08
0.06
0.04
0.02
0.040
0.035
0.030
0.025
VGS= 2.5V
Id = 5.3A
VGS = 4.5V
30 40
0.020
0
10
I
20
2.0
3.0
4.0
5.0
6.0
7.0
8.0
- Drain Current (A )
V
Gate -to -Source Voltage ( V )
D,
GS,
Fig 12. Typical On-Resistance Vs.
Fig 13. Typical On-Resistance Vs.
Gate Voltage
Drain Current
6
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IRLMS2002PbF
Micro6 (SOT23 6L) Package Outline
Dimensions are shown in milimeters (inches)
LEAD ASSIGNMENTS
RECOMMENDED FOOTPRINT
3.00 (.118 )
-B-
2.80 (.111 )
2X 0.95 (.0375 )
D
D
S
1.75 (.068 )
1.50 (.060 )
6
1
5
2
4
3
6X (1.06 (.042 )
3.00 (.118 )
2.60 (.103 )
6
1
5
4
-A-
2.20 (.087 )
2
3
D
G
D
0.95 ( .0375 )
2X
0.50 (.019 )
6X
6X 0.65 (.025 )
0.35 (.014 )
0.15 (.006 ) M C A S B S
0O -10O
0.20 (.007 )
0.09 (.004 )
6X
1.30 (.051 )
0.90 (.036 )
1.45 (.057 )
0.90 (.036 )
-C-
0.10 (.004 )
SURFACES
0.15 (.006 )
MAX.
0.60 (.023 )
0.10 (.004 )
6
NOTES :
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : MILLIMETER.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
Micro6™ P
Micro6 (SOT23 6L) Part Marking Information
W= (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
WORK
WEEK
YEAR
Y
W
Y = YEAR
W = WE E K
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
PART NUMBER
LOT
CODE
TOP
24
25
26
X
Y
Z
PART NUMBER CODE REFERENCE:
A = IRL MS 1902
B = IRLMS1503
C = IR L MS 6702
D = IRLMS5703
E = IRLMS6802
F = IRLMS4502
G = IRLMS 2002
H = IRLMS6803
W = (27-52) IF PRECEDED BY ALETTER
WORK
YEAR
Y
WEEK
W
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
27
28
29
30
A
B
C
D
F
G
H
J
Note: A line above the work week
(as shown here) indicates Lead-Free.
K
50
51
52
X
Y
Z
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7
IRLMS2002PbF
Micro6 Tape & Reel Information
Dimensions are shown in milimeters (inches)
8mm
FEED DIRECTION
4mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 01/05
8
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