IRSF3021S [INFINEON]
Buffer/Inverter Based Peripheral Driver, 10A, PDSO4;
| 型号： | IRSF3021S |
| 厂家： | 
Infineon |
| 描述： | Buffer/Inverter Based Peripheral Driver, 10A, PDSO4 驱动 光电二极管 接口集成电路 |
| 文件： | 总6页 (文件大小：213K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No. PD 60068-H
IRSF3021
FULLY PROTECTED POWER MOSFET SWITCH
Features
Product Summary
· Controlled slew rate reduces EMI
· Over temperature protection with auto-restart
· Linear current-limit protection
· Active drain-to-source clamp
· ESD protection
· Lead compatible with standard Power MOSFET
· Low operating input current
V
50V
ds(clamp)
R
I
200mW
5.5A
165oC
ds(on)
lim
T
j(sd)
· Monolithic construction
E
200mJ
AS
Description
The IRSF3021 Lamp and DC motor driver is a fully protected
three terminal monolithic Smart Power MOSFET that fea-
tures current limiting, over-temperature protection, ESD
protection and over-voltage protection.
Applications
· Cabin Lighting
· Airbag System
· Programmable Logic Controller
· DC Motor Drive
The on-chip protection circuit limits the drain current at 5.5A
(typical) in the on-state, when the load is short circuited. The
over-temperature circuitry turns off the Power MOSFET when
the junction temperature exceeds 165°C (typical). The device
restarts automatically once it has cooled down below the reset
temperature.
Available Packages
The IRSF3021 is specifically designed for driving loads that
require overload protection and in-rush current control while
operating in automotive and industrial environments. Tar-
geted applications include resistive loads such as lamps or
capacitive loads such as airbag squibs and DC motor drives.
3 Lead
SOT223
3 Lead
TO220AB
BlockDiagram
DRAIN
Drain
Input
INPUT
Source
SOURCE
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1
IRSF3021
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.
(TC = 25oC unless otherwise specified.)
Symbol Parameter
Min. Max. Units Test Conditions
V
V
I
Continuous drain to source voltage
Continuous input voltage
Continuous drain current
Power dissipation
—
-0.3
—
50
10
max
ds,
in,
V
max
self limited
30
A
W
ds
P
—
T £25oC, TO220
c
d
—
3
W
T £25oC, SOT223
c
E
V
V
T
T
T
Unclamped single pulse inductive energyÁ
Electrostatic discharge voltage (Human Body Model)
Electrostatic discharge voltage (Machine Model)
Operating junction temperature range
Storage temperature range
—
200
mJ
AS
—
4000
1000
150
100pF, 1.5kW
200pF, 0W
esd1
esd2
Jop
Stg
L
V
—
-55
-55
—
150
oC
Lead temperature (soldering, 10 seconds)
300
Static Electrical Characteristics
(TC = 25oC unless otherwise specified.)
Symbol Parameter
Min. Typ. Max. Units Test Conditions
V
Drain to source clamp voltage
Drain to source on resistance
Drain to source leakage current
Input threshold voltage
50
—
—
1.0
—
—
9
56
155
—
65
200
250
3.0
300
500
—
I
= 6A, t = 700 mS
p
ds
V
mW
mA
V
mA
mA
ds,clamp
R
V
V
V
V
V
= 5V, I = 2A
ds
ds(on)
in
I
= 40V, V = 0V
in
dss
ds
ds
in
V
2.0
100
250
10
= V , I + I = 10mA
ds
th
in
in
I
I
Input supply current (Normal Operation)
Inputsupplycurrent(ProtectionMode)
Input clamp voltage
= 5V
i,on
i,off
= 5V
in
V
V
I
in
= 1mA
in, clamp
sd
V
Body-drain diode forward drop➂
—
1.5
—
I
= -2A, R = 1kW
in
ds
Thermal Characteristics
Symbol Parameter
Min. Typ. Max. Units Test Conditions
oC/W TO-220AB
R
R
R
R
Junction to case
Junction to ambient
Junction to case
Junction to PCB ➀
—
—
—
—
—
—
—
—
4
thjc
thja
thjc
thja
60
40
60
oC/W SOT-223
NOTES:
① When mounted on a 1" square PCB (FR-4 or G10 material). For recommended footprint and soldering techniques,
refer to International Rectifier Application Note AN-994.
o
② EAS is tested with a constant current source of 6A applied for 700µS with Vin = 0V and starting Tj = 25 C.
③Input current must be limited to less than 5mA with a 1kW resistor in series with the input when the Body-Drain Diode is
forward biased.
2
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IRSF3021
Switching ElectricalCharacteristics
o
(VCC = 14V, resistive load (RL) = 10W,Rin= 100W. Specifications measured at TC= 25 C unless other-
wise specified.)
Symbol Parameter
Min. Typ. Max. Units Test Conditions
t
Turn-on delay time
Rise Time
—
—
—
—
-4
-4
10
30
20
15
—
—
50
80
60
50
4
V = 0V to 5V, 50% to 90%
in
V = 0V to 5V, 90% to 10%
in
V = 5V to 0V, 50% to 10%
in
V = 5V to 0V, 10% to 90%
in
don
t
r
t
t
ms
Turn-off delay time
Fall time
Output positive slew rate
Output negative slew rate
doff
f
SR
SR
V = 0V to 5V, +dV
ds/dt
ds/dt
in
V = 5V to 0V, -dV
V/ms
4
in
Protection Characteristics
(TC= 25oC unless otherwise specified.
Symbol Parameter
Min. Typ. Max. Units Test Conditions
I
Current limit
3.0
155
—
5.5
165
3
8.0
—
—
—
—
—
A
oC
V
V
= 5V, V = 14V
ds(lim)
in
in
ds
T
V
Over temperature shutdown threshold
Min. input voltage for over-temp function
Current limit response time
Peak short circuit current
V
= 5V, I = 2A
ds
j(sd)
protect
Iresp
peak
t
I
t
—
TBD
10
TBD
ms
A
ms
—
—
Over-temperature response time
Tresp
Lead Assignments
2(D)
(2)D
1
2
3
In
D
S
1 2 3
In D S
3 Lead - SOT223
3 Lead - TO220
IRSF3021L
IRSF3021
Part Number
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3
IRSF3021
Case Outline 3 Lead - SOT-223
IRGB X01-3032 00
4
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IRSF3021
Case Outline 3 Lead - TO220
2
NOTES:
2X
IRGB01-302601
Tape & Reel - SOT223
01-0028 05/01-0008 02
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5
IRSF3021
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2 Tel: (905) 453-2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: 65 838 4630
IR TAIWAN: 16 Fl. Suite D..207, Sec.2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice.
8/98
6
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