ISC007N04NM6 [INFINEON]
凭借先进的 40V OptiMOSTM 6 正常电平功率MOSFET，英飞凌为电池供电应用、电池供电工具、电池管理和低压驱动等所需的正常电平(较高阈值电压)应用提供了标杆解决方案。正常电平的产品组合具有较高的 Vth，这意味着只有较大的栅极电压尖峰才会导致不必要的导通。;
| 型号： | ISC007N04NM6 |
| 厂家： | 
Infineon |
| 描述： | 凭借先进的 40V OptiMOSTM 6 正常电平功率MOSFET，英飞凌为电池供电应用、电池供电工具、电池管理和低压驱动等所需的正常电平(较高阈值电压)应用提供了标杆解决方案。正常电平的产品组合具有较高的 Vth，这意味着只有较大的栅极电压尖峰才会导致不必要的导通。 电池 栅 驱动 栅极 |
| 文件： | 总12页 (文件大小：1609K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ISC007N04NM6
MOSFET
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ40ꢀV
PG-TDSON-8
8
7
5
6
Features
6
7
5
8
•ꢀOptimizedꢀforꢀLowꢀVoltageꢀDrivesꢀapplications
•ꢀOptimizedꢀforꢀBatteryꢀPoweredꢀapplication
•ꢀOptimizedꢀforꢀSynchronousꢀapplication
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)
•ꢀ100%ꢀavalancheꢀtested
Pin 1
4
3
2
2
3
4
•ꢀSuperiorꢀthermalꢀresistance
1
•ꢀN-channel
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
•ꢀ175ꢀ°Cꢀrated
Drain
Pin 5-8
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
*1
Gate
Pin 4
Source
Pin 1-3
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
*1: Internal body diode
Parameter
Value
Unit
VDS
40
V
RDS(on),max
ID
0.7
mΩ
A
381
103
94
Qoss
nC
nC
QG(0V..10V)
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
07N04NM6
RelatedꢀLinks
ISC007N04NM6
PG-TDSON-8 FL
-
Final Data Sheet
1
Rev.ꢀ2.2,ꢀꢀ2023-03-08
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ40ꢀV
ISC007N04NM6
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
2
Rev.ꢀ2.2,ꢀꢀ2023-03-08
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ40ꢀV
ISC007N04NM6
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-
-
-
-
381
269
48
-
VGS=10ꢀV,ꢀTC=25ꢀ°C
VGS=10ꢀV,ꢀTC=100ꢀ°C
Continuous drain current1)
ID
A
VGS=10ꢀV,ꢀTA=25ꢀ°C,
RthJA=50ꢀ°C/W2)
Pulsed drain current3)
Avalanche energy, single pulse4)
ID,pulse
EAS
-
-
-
-
1524
674
20
A
TC=25ꢀ°C
-
mJ
V
ID=50ꢀA,ꢀRGS=25ꢀΩ
Gate source voltage
VGS
-20
-
-
-
-
-
188
3.0
TC=25ꢀ°C
Power dissipation
Ptot
W
TA=25ꢀ°C,ꢀRthJA=50ꢀ°C/W2)
IEC climatic category; DIN IEC 68-1:
55/175/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case,
bottom
RthJC
RthJC
RthJA
-
-
-
-
0.8
°C/W -
°C/W -
°C/W -
Thermal resistance, junction - case,
top
-
-
20
50
Device on PCB,
6 cm² cooling area
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.2,ꢀꢀ2023-03-08
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ40ꢀV
ISC007N04NM6
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
40
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
1.8
2.3
2.8
VDS=VGS,ꢀID=1050ꢀµA
-
-
0.1
10
1
100
VDS=40ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=40ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
10
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
0.6
0.7
0.7
1.0
VGS=10ꢀV,ꢀID=50ꢀA
VGS=6ꢀV,ꢀID=50ꢀA
RDS(on)
mΩ
Gate resistance
RG
gfs
-
-
1.0
-
-
Ω
-
Transconductance
310
S
|VDS|≥2|ID|RDS(on)max,ꢀID=50ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance1)
Output capacitance1)
Reverse transfer capacitance1)
Ciss
Coss
Crss
-
-
-
6500 8400 pF
2100 2700 pF
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz
40
70
-
pF
ns
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
11.7
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,
RG,ext=1.6ꢀΩ
5.2
-
-
-
ns
ns
ns
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
34.4
8.5
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,
RG,ext=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
22
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge1)
Switching charge
Qgs
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV
Qg(th)
Qgd
13
-
13
19
Qsw
21
-
Gate charge total1)
Qg
94
117
Gate plateau voltage
Gate charge total, sync. FET
Output charge1)
Vplateau
Qg(sync)
Qoss
3.3
89
-
-
nC
nC
103
137
VDD=20ꢀV,ꢀVGS=0ꢀV
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.2,ꢀꢀ2023-03-08
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ40ꢀV
ISC007N04NM6
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
188
1524
1
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
A
TC=25ꢀ°C
Diode forward voltage
0.79
26.7
V
VGS=0ꢀV,ꢀIF=50ꢀA,ꢀTj=25ꢀ°C
VR=20ꢀV,ꢀIF=50ꢀA,ꢀdiF/dt=1000ꢀA/µs
VR=20ꢀV,ꢀIF=50ꢀA,ꢀdiF/dt=1000ꢀA/µs
Reverse recovery time1)
Reverse recovery charge1)
53.4
ns
Qrr
182.2 364.4 nC
1) Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.ꢀ2.2,ꢀꢀ2023-03-08
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ40ꢀV
ISC007N04NM6
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
200
400
175
150
125
100
75
350
300
250
200
150
100
50
50
25
0
0
0
25
50
75
100
125
150
175
200
0
25
50
75
100
125
150
175
200
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
104
101
single pulse
0.01
0.02
0.05
0.1
0.2
103
102
1 µs
10 µs
0.5
100
10-1
10-2
100 µs
10 ms
101
100
1 ms
DC
10-1
10-2
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.2,ꢀꢀ2023-03-08
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ40ꢀV
ISC007N04NM6
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
1600
1.2
8 V
6 V
1400
10 V
1.0
5 V
4.5 V
1200
1000
800
0.8
5 V
6 V
0.6
0.4
0.2
0.0
8 V
4.5 V
10 V
600
400
200
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
100
200
300
400
500
600
700
800
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
1500
2.00
25 °C
1.75
1.50
1.25
1.00
0.75
1250
1000
750
500
250
0
175 °C
175 °C
25 °C
0.50
0.25
0.00
0
1
2
3
4
5
0
2
4
6
8
10
VGSꢀ[V]
VGSꢀ[V]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
RDS(on)=f(VGS),ꢀID=50ꢀA;ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.2,ꢀꢀ2023-03-08
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ40ꢀV
ISC007N04NM6
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.6
1.2
0.8
0.4
0.0
10500 µA
1050 µA
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=50ꢀA,ꢀVGS=10ꢀV
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
104
25 °C
25 °C, max
175 °C
Ciss
175 °C, max
Coss
103
102
101
103
102
101
Crss
0
5
10
15
20
25
30
35
40
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.2,ꢀꢀ2023-03-08
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ40ꢀV
ISC007N04NM6
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
10
8 V
20 V
32 V
8
6
4
2
0
25 °C
100 °C
101
150 °C
100
100
101
102
103
0
20
40
60
80
100
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=50ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
44
43
42
41
40
39
38
-80
-40
0
40
80
120
160
200
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.2,ꢀꢀ2023-03-08
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ40ꢀV
ISC007N04NM6
5ꢀꢀꢀꢀꢀPackageꢀOutlines
PACKAGE - GROUP
NUMBER:
PG-TDSON-8-U04
MILLIMETERS
DIMENSIONS
MIN.
0.90
0
MAX.
1.20
0.05
0.54
0.35
5.35
4.40
3.25
5.38
6.10
3.76
0.89
A
A1
b
0.26
0.15
4.80
3.70
2.94
5.05
5.70
3.43
0.69
c
D
D1
D2
D3
E
E1
E2
e
1.27
L
0.45
0.69
0.10
0.66
0.90
0.25
L1
aaa
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8ꢀFL,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.2,ꢀꢀ2023-03-08
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ40ꢀV
ISC007N04NM6
PG-TDSON-8FL: Recommended Boardpads & Apertures
Figure 2 Outline Boardpads (TDSON-8 FL)
Final Data Sheet
11
Rev.ꢀ2.2,ꢀꢀ2023-03-08
OptiMOSTM 6 Power-Transistor , 40 V
ISC007N04NM6
Revision History
ISC007N04NM6
Revision: 2023-03-08, Rev. 2.2
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
2.2
2020-11-02
Release of final version
2022-10-21
2023-03-08
Update outline drawing and fix bug
Fix package drawings bug
Trademarks
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aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Final Data Sheet
12
Rev. 2.2, 2023-03-08
相关型号：
ISC009N06LM5
ISC009N06LM5 为采用 SuperSO8 封装的英飞凌 OptiMOS™ MOSFET，该器件进一步完善了 OptiMOS™ 5 和 3 产品系列，在增强稳健性之余，还提高了功率密度以满足对低系统成本和高性能的需求。
INFINEON
ISC010N04NM6
凭借先进的 40V OptiMOSTM 6 正常电平功率MOSFET，英飞凌为电池供电应用、电池供电工具、电池管理和低压驱动等所需的正常电平(较高阈值电压)应用提供了标杆解决方案。正常电平的产品组合具有较高的 Vth，这意味着只有较大的栅极电压尖峰才会导致不必要的导通。
INFINEON
ISC010N06NM5
英飞凌 OptiMOS™ 5 功率 MOSFET 60 V 采用 SuperSO8 封装 (ISC010N06NM5)，具备低导通电阻 RDS(on)（25˚C 和 175˚C 下）和高连续电流（可达 330 A）。英飞凌 OptiMOS™ 3 和 5 产品系列新增 SuperSO8 封装型 OptiMOS™ MOSFET，器件功率密度和稳健性更高，可降低系统成本并增强性能。低反向恢复电荷 (Qrr) 将大幅降低电压过冲，因此无需使用吸收电路，进而可减少工程成本和工作量，提高系统可靠性。
INFINEON
ISC012N04LM6
ISC012N04LM6 OptiMOSTM 6 40V逻辑电平在分立功率 MOSFET 领域建立了新的技术标准。与其他替代产品相比，英飞凌领先的薄晶圆技术带来了显著的性能优势。
INFINEON
ISC022N10NM6
正常电平 ISC022N10NM6 OptiMOS™ 6 系列 100 V 器件在分立式功率 MOSFET 领域树立了全新技术标准。相较于替代产品，英飞凌的领先薄晶圆技术显示出卓越性能优势。
INFINEON
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