Q62702-F1064 [INFINEON]
PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage); PNP硅高压晶体管(适用于视频输出级中的电视机和开关电源的高击穿电压)的![Q62702-F1064](http://pdffile.icpdf.com/pdf1/p00089/img/icpdf/Q62702_467486_icpdf.jpg)
型号: | Q62702-F1064 |
厂家: | ![]() |
描述: | PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
文件: | 总4页 (文件大小:131K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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BFN 23
PNP Silicon High-Voltage Transistor
● Suitable for video output stages in TV sets
and switching power supplies
● High breakdown voltage
● Low collector-emitter saturation voltage
● Low capacitance
● Complementary type: BFN 22 (NPN)
Package1)
SOT-23
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
BFN 23
HCs
Q62702-F1064
B
E
C
Maximum Ratings
Parameter
Symbol
Values
250
250
250
5
Unit
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage, RBE = 2.7 kΩ
Emitter-base voltage
Collector current
V
CE0
CB0
CER
EB0
V
V
V
V
IC
50
mA
Peak collector current
I
CM
100
360
150
P
tot
mW
˚C
Total power dissipation, T = 71 ˚C
S
Junction temperature
T
j
Storage temperature range
Tstg
– 65 … + 150
Thermal Resistance
Junction - ambient2)
R
th JA
th JS
≤ 290
≤ 220
K/W
Junction - soldering point
R
1)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
2)
5.91
Semiconductor Group
1
BFN 23
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
V
V
V
V
(BR)CE0
(BR)CB0
(BR)CER
(BR)EB0
250
250
250
5
–
–
–
–
–
–
–
–
V
IC
= 1 mA
Collector-base breakdown voltage
= 10 µA
Collector-emitter breakdown voltage
= 10 µA, RBE = 2.7 kΩ
Emitter-base breakdown voltage
= 10 µA
Collector-base cutoff current
IC
IC
IE
ICB0
ICER
IEB0
VCB = 200 V
–
–
–
–
100
20
nA
µA
V
CB = 200 V, T
A
= 150 ˚C
Collector cutoff current
µA
V
V
CE = 250 V, RBE = 2.7 kΩ
CE = 250 V, T = 150 ˚C, RBE = 2.7 kΩ
–
–
–
–
1
50
A
Emitter-base cutoff current
–
–
–
–
–
10
–
VEB = 5 V
DC current gain1)
= 25 mA, VCE = 20 V
h
FE
50
–
–
IC
Collector-emitter saturation voltage1)
= 10 mA, I = 1 mA
V
V
CEsat
BEsat
0.5
1
V
IC
B
Base-emitter saturation voltage1)
= 10 mA, I = 1 mA
–
IC
B
AC characteristics
Transition frequency
f
T
–
–
100
0.8
–
–
MHz
pF
IC
= 10 mA, VCE = 10 V, f = 20 MHz
Output capacitance
C
obo
VCB = 30 V, f= 1 MHz
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group
2
BFN 23
Total power dissipation Ptot = f (T
* Package mounted on epoxy
A
*; TS
)
Output capacitance Cobo = f (VCE
f= 1 MHz
)
Permissible pulse load Ptot max/Ptot DC = f (t
p
)
Transition frequency f
T
= f (I )
C
V
CE = 10 V
Semiconductor Group
3
BFN 23
Collector current I
C
= f (VBE
)
DC current gain hFE = f (I )
C
V
CE = 20 V
VCE = 20 V
Collector cutoff current ICB0 = f (T )
A
V
CB = 200 V
Semiconductor Group
4
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