Q67000-A9283 [INFINEON]

5-A H-Bridge for DC-Motor Applications; 5 -A H桥的直流电机的应用
Q67000-A9283
型号: Q67000-A9283
厂家: Infineon    Infineon
描述:

5-A H-Bridge for DC-Motor Applications
5 -A H桥的直流电机的应用

电机
文件: 总23页 (文件大小:204K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
5-A H-Bridge for DC-Motor Applications  
TLE 5205-2  
1
Overview  
Features  
1.1  
• Delivers up to 5 A continuous 6 A peak current  
• Optimized for DC motor management applications  
• Operates at supply voltages up to 40 V  
• Very low RDS ON; typ. 200 m@ 25 °C per switch  
• Output full short circuit protected  
• Overtemperature protection with hysteresis  
and diagnosis  
P-TO220-7-11  
• Short circuit and open load diagnosis  
with open drain error flag  
• Undervoltage lockout  
• CMOS/TTL compatible inputs with hysteresis  
• No crossover current  
P-DSO-20-12  
• Internal freewheeling diodes  
• Wide temperature range; 40 °C < Tj < 150 °C  
Type  
Ordering Code Package  
TLE 5205-2  
Q67000-A9283 P-TO220-7-11  
P-TO263-7-1  
TLE 5205-2GP Q67006-A9237 P-DSO-20-12  
TLE 5205-2G  
TLE 5205-2S  
Q67006-A9325 P-TO263-7-1  
Q67000-A9324 P-TO220-7-12  
Description  
P-TO220-7-12  
The TLE 5205-2 is an integrated power H-bridge with  
DMOS output stages for driving DC-Motors. The part is  
built using the Infineon multi-technology process SPT® which allows bipolar and CMOS  
control circuitry plus DMOS power devices to exist on the same monolithic structure.  
Operation modes forward (cw), reverse (ccw), brake and high impedance are invoked  
from just two control pins with TTL/CMOS compatible levels. The combination of an  
extremely low RDS ON and the use of a power IC package with low thermal resistance and  
high thermal capacity helps to minimize system power dissipation. A blocking capacitor  
at the supply voltage is the only external circuitry due to the integrated freewheeling  
diodes.  
Data Sheet  
1
2001-06-19  
TLE 5205-2  
Overview  
1.2  
Pin Configuration (top view)  
TLE 5205-2  
TLE 5205-2GP  
GND  
N.C.  
N.C.  
N.C.  
N.C.  
VS  
1
2
3
4
5
6
7
8
9
10  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
GND  
N.C.  
N.C.  
N.C.  
N.C.  
VS  
Q1  
Q2  
EF  
N.C.  
IN2  
IN1  
1
2
3
4
5
6
7
GND  
GND  
AEP01680  
TLE 5205-2S  
EF  
GND  
VS  
OUT1  
IN1  
IN2  
OUT2  
AEP01990  
TLE 5205-2G  
1
2
3
4
5
6
7
1
2
3
4
5
6
7
OUT1 IN1  
EF  
IN2  
GND  
OUT2  
VS  
AEP01991  
OUT1  
EF  
IN1  
IN2  
OUT2  
GND  
VS  
AEP02513  
Figure 1  
Data Sheet  
2
2001-06-19  
TLE 5205-2  
Overview  
1.3  
Pin Definitions and Functions  
Pin No.  
P-TO220 P-DSO  
Pin No.  
Symbol  
OUT1  
EF  
Function  
1
2
3
4
5
7
8
9
Output of Channel 1; Short-circuit protected;  
integrated freewheeling diodes for inductive loads.  
Error Flag; TTL/CMOS compatible output  
for error detection; (open drain)  
IN1  
Control Input 1;  
TTL/CMOS compatible  
1, 10,  
11, 20  
GND  
IN2  
Ground;  
internally connected to tab  
12  
Control Input 2;  
TTL/CMOS compatible  
6
7
6, 15  
14  
VS  
Supply Voltage; block to GND  
OUT2  
Output of Channel 2; Short-circuit protected;  
integrated freewheeling diodes for inductive loads.  
2, 3, 4, 5, N.C.  
16, 17, 18,  
19  
Not Connected  
Data Sheet  
3
2001-06-19  
TLE 5205-2  
Overview  
1.4  
Functional Block Diagram  
V
S
6
2
EF  
Error Flag  
Diagnosis and Protection Circuit 1  
1
OUT1  
IN  
OUT  
3
5
IN1  
IN2  
1
2
1
2
0
0
1
1
0
1
0
1
1
0
0
Z
0
1
0
Z
7
OUT2  
Diagnosis and Protection Circuit 2  
4
AEB02394  
GND  
Figure 2 Block Diagram  
Data Sheet  
4
2001-06-19  
TLE 5205-2  
Overview  
1.5  
Circuit Description  
Input Circuit  
The control inputs consist of TTL/CMOS-compatible schmitt-triggers with hysteresis.  
Buffer amplifiers are driven by this stages.  
Output Stages  
The output stages consist of a DMOS H-bridge. Integrated circuits protect the outputs  
against short-circuit to ground and to the supply voltage. Positive and negative voltage  
spikes, which occur when switching inductive loads, are limited by integrated  
freewheeling diodes.  
A monitoring circuit for each output transistor detects whether the particular transitor is  
active and in this case prevents the corresponding source transistor (sink transistor) from  
conducting in sink operation (source operation). Therefore no crossover currents can  
occur.  
1.6  
Input Logic Truth Table  
Functional Truth Table  
IN1  
L
IN2  
L
OUT1 OUT2 Comments  
H
L
L
Z
L
H
L
Z
Motor turns clockwise  
L
H
Motor turns counterclockwise  
Brake; both low side transistors turned-ON  
Open circuit detection  
H
L
H
H
Notes for Output Stage  
Symbol  
Value  
L
Low side transistor is turned-ON  
High side transistor is turned-OFF  
H
Z
High side transistor is turned-ON  
Low side transistor is turned-OFF  
High side transistor is turned-OFF  
Low side transistor is turned-OFF  
Data Sheet  
5
2001-06-19  
TLE 5205-2  
Overview  
1.7  
Monitoring Functions  
Undervoltage lockout (UVLO):  
When VS reaches the switch on voltage VS ON the IC becomes active with a hysteresis.  
All output transistors are switched off if the supply voltage VS drops below the switch off  
value VS OFF.  
1.8  
Protective Function  
Various errors like short-circuit to + VS, ground or across the load are detected. All faults  
result in turn-OFF of the output stages after a delay of 50 µs and setting of the error flag  
EF to ground. Changing the inputs resets the error flag.  
a. Output Shorted to Ground Detection  
If a high side transistor is switched on and its output is shorted to ground, the output  
current is internally limited. After a delay of 50 µs all outputs will be switched-OFF and  
the error flag is set.  
b. Output Shorted to + VS Detection  
If a low side transistor is switched on and its output is shorted to the supply voltage,  
the output current is internally limited. After a delay of 50 µs all outputs will be  
switched-OFF and the error flag is set.  
c. Overload Detection  
An internal circuit detects if the current through the low side transistor exceeds the  
trippoint ISDL. In this case all outputs are turned off after 50 µs and the error flag is set.  
d. Overtemperature Protection  
At a junction temperature higher than 150 °C the thermal shutdown turns-OFF, all four  
output stages commonly and the error flag is set with a delay.  
e. Open Load Detection  
The output Q1 has a 10 kpull-up resistor and the output Q2 has a 10 kpull-down  
resistor. If E1 and E2 are high, all output power stages are turned-OFF. In case of no  
load between Q1 and Q2 the output voltage Q1 is VS and Q2 is ground. This state will  
be detected by two comparators and an error flag will be set after a delay time of  
50 µs. Changing the inputs resets the error flip flop.  
Data Sheet  
6
2001-06-19  
TLE 5205-2  
Overview  
=
V
EH  
Pull UP  
10 k  
EF  
Pull  
Down  
10 k  
=
V
&
EL  
50 µs  
RS  
FF  
AES02395  
Figure 3 Simplified Schematic for Open Load Detection  
Data Sheet  
7
2001-06-19  
TLE 5205-2  
Diagnosis  
2
Diagnosis  
Various errors as listed in the table Diagnosisare detected. Short circuits and overload  
result in turning off the output stages after a delay tdSD and setting the error flag  
simultaneously [EF = L]. Changing the inputs to a state where the fault is not detectable  
resets the error flag (input toggling) with the exception of short circuit from OUT1 to  
OUT2 (load short circuit).  
Flag  
IN1 IN2 OUT1 OUT2 EF Remarks  
Nr.  
0
0
1
1
0
1
0
1
H
L
L
Z
L
H
L
Z
1
1
1
0
Not detectable  
Not detectable  
Not detectable  
1
2
3
4
Open circuit between OUT1 and OUT2  
0
0
1
1
0
1
0
1
VS/2  
VS/2  
L
VS/2  
VS/2  
L
0
0
1
1
5
6
7
8
Short circuit from OUT1 to OUT2  
Short circuit from OUT1 to GND  
Short circuit from OUT2 to GND  
Short circuit from OUT1 to VS  
Not detectable  
Not detectable  
Z
Z
0
0
1
1
0
1
0
1
GND  
GND  
GND  
GND  
L
H
L
L
0
1
1
1
9
Not detectable 10  
Not detectable 11  
Not detectable 12  
0
0
1
1
0
1
0
1
H
L
L
L
GND  
GND  
GND  
GND  
1
0
1
1
Not detectable 13  
14  
Not detectable 15  
Not detectable 16  
0
0
1
1
0
1
0
1
VS  
VS  
VS  
VS  
L
1
0
0
1
Not detectable 17  
H
H
H
18  
19  
Not detectable 20  
0
0
1
1
0
1
0
1
H
L
H
H
VS  
VS  
VS  
VS  
0
1
0
1
21  
Not detectable 22  
23  
Short circuit from OUT2 to VS  
Not detectable 24  
Overtemperature or undervoltage  
0
0
1
1
0
1
0
1
Z
Z
Z
Z
Z
Z
Z
Z
0
0
0
0
25  
26  
27  
28  
IN: 0 = Logic LOW OUT: Z = Output in tristate condition  
EF: 1 = No error  
0 = Error  
1 = Logic HIGH  
= VS /2 due to internal Pull-up/down resistors  
L = Output in sink condition  
H = Output in source condition  
Data Sheet  
8
2001-06-19  
TLE 5205-2  
Electrical Characteristics  
3
Electrical Characteristics  
3.1  
Absolute Maximum Ratings  
40 °C < Tj < 150 °C  
Parameter  
Symbol Limit Values Unit  
min. max.  
Remarks  
Voltages  
Supply voltage  
VS  
0.3 40  
V
V
V
V
1  
40  
7
t < 0.5 s; IS > 5 A  
0 V < VS < 40 V  
Logic input voltage  
VIN1, 2  
VEF  
0.3  
0.3  
Diagnostics output voltage  
7
Currents of DMOS-Transistors and Freewheeling Diodes  
Output current (cont.)  
Output current (peak)  
Output current (peak)  
IOUT1, 2 5  
IOUT1, 2 6  
5
6
A
A
A
tp < 100 ms; T = 1 s  
IOUT1, 2  
tp < 50 µs; T = 1 s;  
internally limitted;  
see overcurrent  
Temperatures  
Junction temperature  
Storage temperature  
Tj  
40  
50  
150  
150  
°C  
°C  
Tstg  
Thermal Resistances  
Junction case  
RthjC  
RthjA  
3
K/W  
P-TO220-7-11/12,  
P-TO263-7-1  
Junction ambient  
65  
75  
5
K/W  
K/W  
K/W  
K/W  
P-TO220-7-11/12  
P-TO263-7-1  
Junction case  
RthjC  
RthjA  
P-DSO-20-12  
P-DSO-20-12  
Junction ambient  
50  
Note: Maximum ratings are absolute ratings; exceeding any one of these values may  
cause irreversible damage to the integrated circuit.  
Data Sheet  
9
2001-06-19  
TLE 5205-2  
Electrical Characteristics  
3.2  
Operating Range  
Parameter  
Symbol Limit Values Unit  
min. max.  
Remarks  
Supply voltage  
VS  
VUV ON 40  
V
After VS rising  
above VUV ON  
Supply voltage increasing  
Supply voltage decreasing  
Logic input voltage  
0.3 VUV ON  
0.3 VUV OFF  
V
Outputs in tristate  
condition  
V
VIN1, 2  
Tj  
0.3  
40  
7
V
Junction temperature  
150  
°C  
3.3  
6 V < VS < 18 V; IN1 = IN2 = HIGH  
OUT1, 2 = 0 A (No load); 40 °C < Tj < 150 °C; unless otherwise specified  
Electrical Characteristics  
I
Parameter  
Symbol  
Limit Values  
Unit Test Condition  
min. typ. max.  
Current Consumption  
Quiescent current  
IS  
10  
mA IN1 = IN2 = LOW;  
VS = 13.2 V  
Under Voltage Lockout  
UV-Switch-ON voltage  
UV-Switch-OFF voltage  
UV-ON/OFF-Hysteresis  
VUV ON  
5.3  
4.7  
0.6  
6
V
V
V
VS increasing  
VS decreasing  
VUV ON VUV OFF  
VUV OFF 3.5  
VUV HY 0.2  
5.6  
Data Sheet  
10  
2001-06-19  
TLE 5205-2  
Electrical Characteristics  
3.3  
6 V < VS < 18 V; IN1 = IN2 = HIGH  
OUT1, 2 = 0 A (No load); 40 °C < Tj < 150 °C; unless otherwise specified  
Electrical Characteristics (contd)  
I
Parameter  
Symbol  
Limit Values  
Unit Test Condition  
min. typ. max.  
Outputs OUT1, 2  
Static Drain-Source-On Resistance  
Source  
RDS ON H  
220  
350  
m6 V < VS < 18 V  
Tj = 25 °C  
IOUT = 3 A  
500  
500  
m6 V < VS < 18 V  
350  
mΩ  
V
S ON < VS 6 V  
Tj = 25 °C  
VS ON < VS 6 V  
800  
350  
mΩ  
Sink  
OUT = 3 A  
RDS ON L  
230  
m6 V < VS < 18 V  
Tj = 25 °C  
I
500  
600  
m6 V < VS < 18 V  
400  
mΩ  
V
S ON < VS 6 V  
Tj = 25 °C  
VS ON < VS 6 V  
1000 mΩ  
Note: Values of RDS ON for VS ON < VS 6 V are guaranteed by design.  
Overcurrent  
Source shutdown trippoint  
Sink shutdown trippoint  
Shutdown delay time  
ISDH  
10  
A
A
A
A
A
A
µs  
Tj = 40 °C  
Tj = 25 °C  
Tj = 150 °C  
Tj = 40 °C  
Tj = 25 °C  
Tj = 150 °C  
8
6
ISDL  
10  
8
6
tdSD  
25  
50  
80  
Data Sheet  
11  
2001-06-19  
TLE 5205-2  
Electrical Characteristics  
3.3  
6 V < VS < 18 V; IN1 = IN2 = HIGH  
OUT1, 2 = 0 A (No load); 40 °C < Tj < 150 °C; unless otherwise specified  
Electrical Characteristics (contd)  
I
Parameter  
Symbol  
Limit Values  
Unit Test Condition  
min. typ. max.  
Short Circuit Current Limitation  
Source current  
Sink current  
ISCH  
20  
15  
A
A
t < tdSD  
t < tdSD  
ISCL  
Open Circuit  
Pull up resistor  
5
10  
10  
2.5  
2.4  
50  
20  
20  
3
kΩ  
kΩ  
V
RUP  
Pull down resistor  
Switching threshold H  
Switching threshold L  
Detection delay time  
5
RDOWN  
VEH  
2
2
3
V
VEH  
25  
80  
µs  
tdSD  
Output Delay Times (Device Active for t > 1 ms)  
Source ON  
td ON H  
td ON L  
td OFF H  
td OFF L  
10  
10  
2
20  
20  
5
µs  
µs  
µs  
µs  
I
OUT = 3 A  
resistive load  
OUT = 3 A  
resistive load  
OUT = 3 A  
resistive load  
OUT = 3 A  
resistive load  
Sink ON  
I
Source OFF  
Sink OFF  
I
2
5
I
Data Sheet  
12  
2001-06-19  
TLE 5205-2  
Electrical Characteristics  
3.3  
6 V < VS < 18 V; IN1 = IN2 = HIGH  
OUT1, 2 = 0 A (No load); 40 °C < Tj < 150 °C; unless otherwise specified  
Electrical Characteristics (contd)  
I
Parameter  
Symbol  
Limit Values  
Unit Test Condition  
min. typ. max.  
Output Switching Times (Device Active for t > 1 ms)  
Source ON  
tON H  
tON L  
tOFF H  
tOFF L  
15  
30  
10  
5
µs  
µs  
µs  
µs  
I
OUT = 3 A  
resistive load  
OUT = 3 A  
resistive load  
OUT = 3 A  
resistive load  
OUT = 3 A  
Sink ON  
5
I
Source OFF  
Sink OFF  
2
I
2
5
I
resistive load  
Clamp Diodes  
Forward Voltage  
High-side  
Low-side  
VFH  
VFL  
1
1.5  
1.5  
V
V
IF = 3 A  
IF = 3 A  
1.1  
Leakage Current  
Source  
Sink  
ILKH  
ILKL  
100 50  
µA  
µA  
OUT1 = VS  
50  
100  
OUT2 = GND  
Logic  
Control Inputs IN 1, 2  
H-input voltage threshold  
L-input voltage  
VINH  
VINL  
VINHY  
IINH  
2.8  
2.5  
1.7  
0.8  
0
V
1.2  
1.2  
2
V
Hysteresis of input voltage  
H-input current  
0.4  
2  
V
µA  
µA  
VIN = 5 V  
VIN = 0 V  
L-input current  
IINL  
10 4  
0
Data Sheet  
13  
2001-06-19  
TLE 5205-2  
Electrical Characteristics  
3.3  
6 V < VS < 18 V; IN1 = IN2 = HIGH  
OUT1, 2 = 0 A (No load); 40 °C < Tj < 150 °C; unless otherwise specified  
Electrical Characteristics (contd)  
I
Parameter  
Symbol  
Limit Values  
Unit Test Condition  
min. typ. max.  
Error Flag Output EF  
Low output voltage  
Leakage current  
VEFL  
IEFL  
0.25 0.5  
V
IEF = 3 mA  
VEF = 7 V  
10  
µA  
Thermal Shutdown  
Thermal shutdown junction  
temperature  
TjSD  
TjSO  
150  
120  
175  
200  
170  
°C  
°C  
Thermal switch-on junction  
temperature  
Temperature hysteresis  
Shutdown delay time  
T  
30  
50  
K
tdSD  
25  
80  
µs  
Note: Values of thermal shutdown are guaranteed by design.  
Data Sheet  
14  
2001-06-19  
TLE 5205-2  
Electrical Characteristics  
Ι
; Ι  
S
FU  
4700 µF  
63 V  
470 nF  
OUT1  
6
Ι
Ι
Ι
EF  
2
3
5
V
Ι
Ι
S
OUT1  
EF  
1
7
IN1  
IN2  
R
V
S
Load  
TLE 5205-2  
IN1  
IN2  
OUT2  
OUT2  
V
EF  
V
IN1  
GND  
4
V
V
V
OUT2  
IN2  
OUT1  
Ι
FL  
AES02396  
Figure 4 Test Circuit  
Overcurrent  
Short Circuit  
Open Circuit  
IOUT  
ISD  
ISC  
IOC  
Data Sheet  
15  
2001-06-19  
TLE 5205-2  
Electrical Characteristics  
VIN  
V
5
_
<
tr = tf 100 ns  
50%  
t
t
0
Ι OUT  
Source  
tdONH  
tdOFFH  
A
3
80%  
50%  
20%  
80%  
50%  
20%  
0
tONH  
tOFFH  
Ι OUT  
Sink  
tOFFL  
tONL  
A
3
80%  
80%  
50%  
20%  
50%  
20%  
tdOFFL  
t
0
tdONL  
AET01994  
Figure 5 Switching Time Definitions  
+ 5 V  
+V  
S
100 µF  
2 k  
6
2
3
5
V
S
EF  
1
7
OUT1  
OUT2  
Ι
Ι
= 3 A  
N
100 nF  
µP  
M
TLE 5205-2  
IN1  
IN2  
= 6 A  
BL  
GND  
4
AES02397  
Figure 6 Application Circuit  
Data Sheet  
16  
2001-06-19  
TLE 5205-2  
Electrical Characteristics  
IN1, 2  
Ι SCH  
Ι SDH  
Ι OUT1, 2  
VOUT1, 2  
RShort x Ι SCH  
VFL  
t dSD  
EF  
AED01997  
Figure 7 Timing Diagram for Output Shorted to Ground  
IN1, 2  
Ι SCL  
Ι SDL  
Ι OUT1, 2  
VOUT1, 2  
VS  
RShort x Ι SCL  
VFU  
t dSD  
EF  
AED01998  
Figure 8 Timing Diagram for Output Shorted to VS  
Data Sheet  
17  
2001-06-19  
TLE 5205-2  
Electrical Characteristics  
Diagrams  
Quiescent Current IS (Active)  
versus Junction Temperature Tj  
Static Drain-Source ON-Resistance  
versus Junction Temperature Tj  
AED02399  
AED02398  
0.6  
7
mA  
R
ON  
Ι
S
0.5  
0.4  
0.3  
0.2  
0.1  
0
6
5
4
3
2
Low Side Transistor  
V
= 18 V  
S
High Side Transistor  
V
= 6 V  
S
1
-50  
0
50  
100  
150  
C
-50  
0
50  
100  
150  
C
T
T
j
j
Input Switching Thresholds VINH, L  
versus Junction Temperature Tj  
Clamp Diode Forward Voltage VF  
versus Junction Temperature Tj  
AED02400  
AED02401  
3.0  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
V
V
V
F
INH, L  
INH  
2.5  
2.0  
1.5  
1.0  
0.5  
0
High Side Transistor  
V
INL  
Low Side Transistor  
-50  
0
50  
100  
150  
-50  
0
50  
100  
150  
C
C
T
T
j
j
Data Sheet  
18  
2001-06-19  
TLE 5205-2  
Electrical Characteristics  
Overcurrent Shutdown Threshold ISD  
versus Junction Temperature Tj  
Switching Threshold VEH, VEH  
versus Junction Temperature Tj  
AED02402  
AED02404  
12  
3.0  
Ι
V
,V  
EL  
SD  
EH  
10  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
Low Side Transistor  
8
V
V
EH  
EL  
High Side Transistor  
6
4
2
0
-50  
0
50  
100  
150  
C
-50  
0
50  
100  
150  
C
T
T
j
j
Error-Flag Saturation Output Voltage  
VEF versus Junction Temperature Tj  
AED02403  
0.6  
V
EF  
0.5  
0.4  
0.3  
0.2  
0.1  
0
-50  
0
50  
100  
150  
C
T
j
Data Sheet  
19  
2001-06-19  
TLE 5205-2  
Package Outlines  
4
Package Outlines  
P-TO220-7-11  
(Plastic Transistor Single Outline Package)  
±0.2  
10  
A
±0.2  
9.9  
4.4  
8.51)  
1.27±0.1  
0.05  
0...0.3  
C
7x 0.6 ±0.1  
0.5±0.1  
3.9±0.4  
2.4  
0...0.15  
6x 1.27  
M
0.25  
A C  
8.4±0.4  
1)  
Typical  
Metal surface min. X=7.25, Y=12.3  
All metal surfaces tin plated, except area of cut.  
Sorts of Packing  
Package outlines for tubes, trays etc. are contained in our  
Data Book Package Information.  
Dimensions in mm  
2001-06-19  
Data Sheet  
20  
TLE 5205-2  
Package Outlines  
P-DSO-20-12  
(Plastic Dual Small Outline Package)  
1)  
±0.15  
11  
B
1.2 -0.3  
2.8  
+0.07  
-0.02  
0.25  
±0.1  
15.74  
6.3  
1.27  
Heatsink  
0.1  
0.4 +0.13  
±0.15  
0.95  
M
0.25 A 20x  
±0.3  
14.2  
M
0.25  
B
20  
11  
1
1 x 45˚  
10  
Index Marking  
1)  
±0.15  
15.9  
A
1) Does not include plastic or metal protrusion of 0.15 max. per side  
GPS05791  
Sorts of Packing  
Package outlines for tubes, trays etc. are contained in our  
Data Book “Package Information”.  
Dimensions in mm  
2001-06-19  
SMD = Surface Mounted Device  
Data Sheet  
21  
TLE 5205-2  
Package Outlines  
P-TO263-7-1 Option E3180  
(Plastic Transistor Single Outline Package)  
4.4  
±0.2  
10  
±0.1  
1.27  
0...0.3  
A
B
8.5 1)  
0.05  
2.4  
0.1  
0...0.15  
7x0.6±0.1  
0.5±0.1  
6x 1.27  
M
0.25  
A B  
8
˚
max.  
0.1  
B
1)  
Typical  
Metal surface min. X=7.25, Y=6.9  
All metal surfaces tin plated, except area of cut.  
Sorts of Packing  
Package outlines for tubes, trays etc. are contained in our  
Data Book Package Information.  
Dimensions in mm  
SMD = Surface Mounted Device  
Data Sheet  
22  
2001-06-19  
TLE 5205-2  
Package Outlines  
P-TO220-7-12  
(Plastic Transistor Single Outline Package)  
±0.2  
10  
A
B
±0.2  
9.9  
4.4  
8.51)  
1.27±0.1  
0...0.3  
0.05  
2.4  
C
±0.1  
0.5  
0...0.15  
2.4  
7x 0.6 ±0.1  
6x 1.27  
M
0.25  
A B C  
1)  
Typical  
Metal surface min. X=7.25, Y=12.3  
All metal surfaces tin plated, except area of cut.  
Sorts of Packing  
Package outlines for tubes, trays etc. are contained in our  
Data Book Package Information.  
Dimensions in mm  
2001-06-19  
Data Sheet  
23  

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