Q67040S4678 [INFINEON]
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode; 低损耗DUOPACK ： IGBT的沟槽场终止和技术，软，恢复快反平行EMCON何二极管
| 型号： | Q67040S4678 |
| 厂家： | 
Infineon |
| 描述： | Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
| 文件： | 总14页 (文件大小：355K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IKA06N60T
TrenchStop series
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
C
•
•
•
•
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5µs
Designed for :
G
E
- Variable Speed Drive for washing machines, air
conditioners and induction cooking
- Uninterrupted Power Supply
•
Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
P-TO-220-3-31
(TO-220 FullPak)
- low VCE(sat)
Low EMI
•
•
•
Very soft, fast recovery anti-parallel EmCon HE diode
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC;Tc=100°C VCE(sat),Tj=25°C Tj,max Marking Code Package
Ordering Code
IKA06N60T
600V
6A
1.5V
K06T60
TO-220-FP Q67040S4678
175°C
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
VCE
IC
600
V
A
12
6
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
ICpuls
-
18
18
V
CE ≤ 600V, Tj ≤ 175°C
Diode forward current, limited by Tjmax
TC = 25°C
TC = 100°C
IF
12
6
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
IFpuls
VGE
tSC
18
±20
5
V
Short circuit withstand time1)
µs
V
GE = 15V, VCC ≤ 400V, Tj ≤ 150°C
Power dissipation
Ptot
28
W
TC = 25°C
Operating junction temperature
Storage temperature
Tj
Tstg
-40...+175
-55...+175
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2 Oct-04
Power Semiconductors
IKA06N60T
TrenchStop series
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
RthJC
RthJCD
RthJA
5.3
6.5
80
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Static Characteristic
Collector-emitter breakdown voltage V(BR)C ES
V
GE=0V,
600
-
-
V
IC=0.25mA
Collector-emitter saturation voltage
Diode forward voltage
VC E(sa t) VGE = 15V, IC=6A
Tj=25°C
-
-
1.5
1.8
2.05
Tj=175°C
VF
VGE=0V, IF=6A
-
-
1.6
1.6
2.05
-
Tj=25°C
Tj=175°C
IC=0.18mA,
Gate-emitter threshold voltage
VGE(th )
IC ES
4.1
4.6
5.7
V
V
C E=VGE
C E=600V,VGE=0V
Zero gate voltage collector current
µA
-
-
-
-
40
700
Tj=25°C
Tj=175°C
Gate-emitter leakage current
Transconductance
IGES
gfs
V
V
C E=0V,VGE=20V
C E=20V, IC=6A
-
-
-
100
-
nA
S
3.6
Integrated gate resistor
RGint
none
Ω
2
Rev. 2 Oct-04
Power Semiconductors
IKA06N60T
TrenchStop series
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
V
V
C E=25V,
GE=0V,
-
-
-
-
368
28
11
-
-
-
-
pF
f=1MHz
V
V
QGa te
CC=480V, IC=6A
GE=15V
42
nC
nH
A
Internal emitter inductance
LE
P-TO-220-3-31
-
-
7
-
-
measured 5mm (0.197 in.) from case
Short circuit collector current1)
IC (SC)
55
V
GE=15V,tSC ≤5µs
VCC = 400V,
Tj = 25°C
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
td (on)
tr
td (off)
tf
Eon
Eo ff
Ets
-
-
-
-
-
-
-
9.4
5.6
130
58
0.09
0.11
0.2
-
-
-
-
-
-
-
ns
Tj=25°C,
V
V
CC=400V,IC=6A,
GE=0/15V,
RG=23Ω,
Lσ 2)=60nH,
Cσ 2)=40pF
mJ
Energy losses include
“tail” and diode
reverse recovery.
trr
Qrr
-
-
-
-
123
190
5.3
-
-
-
-
ns
nC
A
Tj=25°C,
VR=400V, IF=6A,
diF/dt=550A/µs
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
dirr/dt
450
A/µs
recovery current during tb
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.
3
Rev. 2 Oct-04
Power Semiconductors
IKA06N60T
TrenchStop series
Switching Characteristic, Inductive Load, at Tj=175 °C
Value
Unit
Parameter
Symbol
Conditions
min.
typ.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
td (on)
tr
td (off)
tf
Eon
Eo ff
Ets
-
-
-
-
-
-
-
8.8
8.2
165
84
0.14
0.18
0.335
-
-
-
-
-
-
-
ns
Tj=175°C,
V
V
CC=400V,IC=6A,
GE=0/15V,
RG= 23Ω
Lσ 1)=60nH,
Cσ 1)=40pF
mJ
Energy losses include
“tail” and diode
reverse recovery.
trr
Qrr
-
-
-
-
180
500
7.6
-
-
-
-
ns
nC
A
Tj=175°C
VR=400V, IF=6A,
diF/dt=550A/µs
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
dirr/dt
285
A/µs
recovery current during tb
1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.
4
Rev. 2 Oct-04
Power Semiconductors
IKA06N60T
TrenchStop series
10A
tp=1µs
5µs
15A
10A
5A
10µs
TC=80°C
50µs
1A
TC=110°C
500µs
5ms
Ic
Ic
0,1A
DC
0A
10Hz
100Hz
1kHz
10kHz 100kHz
1V
10V
100V
1000V
f, SWITCHING FREQUENCY
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
Figure 2. Safe operating area
(D = 0, TC = 25°C,
(Tj ≤ 175°C, D = 0.5, VCE = 400V,
Tj ≤175°C;VGE=15V)
V
GE = 0/+15V, RG = 23Ω)
25W
20W
15W
10W
5W
8A
6A
4A
2A
0A
0W
25°C
75°C
125°C
25°C
50°C
75°C 100°C 125°C 150°C
TC, CASE TEMPERATURE
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
Figure 4. Collector current as a function of
case temperature
(Tj ≤ 175°C)
(VGE ≥ 15V, Tj ≤ 175°C)
5
Rev. 2 Oct-04
Power Semiconductors
IKA06N60T
TrenchStop series
15A
12A
9A
15A
12A
9A
V
GE=20V
15V
V
GE=20V
15V
13V
11V
9V
13V
11V
9V
7V
7V
6A
6A
3A
3A
0A
0A
0V
1V
2V
3V
0V
1V
2V
3V
VCE, COLLECTOR-EMITTER VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
Figure 6. Typical output characteristic
(Tj = 25°C)
(Tj = 175°C)
3,0V
2,5V
2,0V
15A
12A
9A
IC=12A
IC=6A
IC=3A
1,5V
1,0V
0,5V
0,0V
6A
TJ=175°C
3A
25°C
0A
-50°C
0°C
50°C
100°C
0V
2V
4V
6V
8V
10V
V
GE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
(VCE=20V)
saturation voltage as a function of
junction temperature
(VGE = 15V)
6
Rev. 2 Oct-04
Power Semiconductors
IKA06N60T
TrenchStop series
td(off)
td(off)
100ns
10ns
1ns
tf
tf
100ns
10ns
1ns
td(on)
tr
td(on)
tr
0A
3A
6A
9A
12A
15A
10Ω
30Ω
50Ω
70Ω
90Ω
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=175°C,
V
CE = 400V, VGE = 0/15V, RG = 23ꢀ,
VCE = 400V, VGE = 0/15V, IC = 6A,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
6V
5V
4V
3V
2V
1V
0V
td(off)
100ns
10ns
1ns
max.
tf
typ.
td(on)
min.
tr
50°C
100°C
150°C
-50°C
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.18mA)
V
GE = 0/15V, IC = 6A, RG = 23ꢀ,
Dynamic test circuit in Figure E)
7
Rev. 2 Oct-04
Power Semiconductors
IKA06N60T
TrenchStop series
*) Eon and Ets include losses
*) Eon and Ets include losses
due to diode recovery
due to diode recovery
Ets*
0,6 mJ
0,5 mJ
0,4 mJ
0,3 mJ
0,2 mJ
0,1 mJ
0,0 mJ
0,4 mJ
Ets*
0,3 mJ
0,2 mJ
0,1 mJ
0,0 mJ
Eon*
Eoff
Eoff
Eon*
0A
2A
4A
6A
8A
10A
10Ω
30Ω
55Ω
80Ω
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=175°C,
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=175°C,
VCE=400V, VGE=0/15V, RG=23ꢀ,
Dynamic test circuit in Figure E)
VCE = 400V, VGE = 0/15V, IC = 6A,
Dynamic test circuit in Figure E)
*) Eon and Ets include losses
*) Eon and Ets include losses
due to diode recovery
0,4mJ
due to diode recovery
0,5mJ
0,4mJ
0,3mJ
0,2mJ
0,1mJ
0,0mJ
Ets*
0,3mJ
Eoff
Eon
Ets*
0,2mJ
Eoff
*
0,1mJ
Eon*
0,0mJ
50°C
100°C
150°C
200V
300V
400V
500V
TJ, JUNCTION TEMPERATURE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction
temperature
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, VCE=400V,
(inductive load, TJ = 175°C,
V
GE = 0/15V, IC = 6A, RG = 23ꢀ,
VGE = 0/15V, IC = 6A, RG = 23ꢀ,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
8
Rev. 2 Oct-04
Power Semiconductors
IKA06N60T
TrenchStop series
1nF
Ciss
15V
10V
5V
120V
100pF
10pF
480V
Coss
Crss
0V
0nC
10nC 20nC 30nC 40nC 50nC
GE, GATE CHARGE
0V
10V
20V
Q
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
Figure 18. Typical capacitance as a function
(IC=6 A)
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
12µs
10µs
8µs
80A
60A
40A
20A
0A
6µs
4µs
2µs
0µs
10V
11V
12V
13V
14V
12V
14V
16V
18V
V
GE, GATE-EMITTETR VOLTAGE
VGE, GATE-EMITETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C,
T
Jmax<150°C)
(VCE ≤ 400V, Tj ≤ 150°C)
9
Rev. 2 Oct-04
Power Semiconductors
IKA06N60T
TrenchStop series
D=0.5
D=0.5
R , ( K / W )
0.403
2.57
τ , ( s )
1.773*10-2
1.346
0.2
6
100K/W
0.2
R , ( K / W )
0.381
100K/W
τ , ( s )
0.1
1.867*10-2
1.350
6
0.938
2.33
1.956*10-3
4.878*10-4
4.016*10-5
5.684*10-1
0.1
2.57
0.05
0.645
2.208*10-3
5.474*10-4
5.306*10-5
0.071
175
R1
0.05
1.454
R2
0.062
0.02
0.01
0.186
5.926*10-1
10-1K/W
R1
R2
0.02
0.01
10-1K/W
C1=τ1/R1 C2=τ2/R2
single pulse
C1=τ1/R1 C2=τ2/R2
single pulse
10-2K/W
10µs 100µs 1ms 10ms 100ms 1s
1
10µs 100µs 1ms 10ms 100ms 1s
1
tP, PULSE WIDTH
tP, PULSE WIDTH
Figure 21. IGBT transient thermal resistance
Figure 22. Diode transient thermal
(D = tp / T)
impedance as a function of pulse
width
(D=tP/T)
250ns
200ns
0,5µC
0,4µC
0,3µC
0,2µC
0,1µC
0,0µC
TJ=175°C
TJ=175°C
150ns
100ns
TJ=25°C
TJ=25°C
50ns
0ns
200A/µs 400A/µs 600A/µs 800A/µs
200A/µs
400A/µs
600A/µs
800A/µs
diF/dt, DIODE CURRENT SLOPE
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(VR = 400V, IF = 6A,
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
Dynamic test circuit in Figure E)
(VR = 400V, IF = 6A,
Dynamic test circuit in Figure E)
10
Rev. 2 Oct-04
Power Semiconductors
IKA06N60T
TrenchStop series
TJ=175°C
-500A/µs
TJ=25°C
8A
6A
4A
2A
0A
-400A/µs
-300A/µs
-200A/µs
-100A/µs
0A/µs
TJ=25°C
TJ=175°C
200A/µs 400A/µs 600A/µs 800A/µs
200A/µs
400A/µs
600A/µs
800A/µs
diF/dt, DIODE CURRENT SLOPE
diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR = 400V, IF = 6A,
(VR = 400V, IF = 6A,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
10A
8A
2,0V IF=12A
6A
1,5V
6A
3A
1,0V
4A
TJ=175°C
0,5V
0,0V
2A
0A
25°C
0°C
50°C
100°C
150°C
0,0V
0,5V
1,0V
1,5V
2,0V
VF, FORWARD VOLTAGE
Figure 27. Typical diode forward current as
a function of forward voltage
TJ, JUNCTION TEMPERATURE
Figure 28. Typical diode forward voltage as a
function of junction temperature
11
Rev. 2 Oct-04
Power Semiconductors
IKA06N60T
TrenchStop series
dimensions
P-TO220-3-31
symbol
[mm]
[inch]
min
max
10.63
16.12
0.78
min
max
A
B
C
D
E
F
10.37
15.86
0.65
0.4084
0.6245
0.0256
0.4184
0.6345
0.0306
2.95 typ.
0.1160 typ.
3.15
6.05
13.47
3.18
0.45
1.23
3.25
6.56
13.73
3.43
0.63
1.36
0.124
0.2384
0.5304
0.125
0.128
0.2584
0.5404
0.135
G
H
K
L
0.0177
0.0484
0.0247
0.0534
M
N
P
T
2.54 typ.
0.100 typ.
4.57
2.57
2.51
4.83
2.83
2.62
0.1800
0.1013
0.0990
0.1900
0.1113
0.1030
12
Rev. 2 Oct-04
Power Semiconductors
IKA06N60T
TrenchStop series
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
tr r
IF
tS
tF
t
QS
10% Ir r m
QF
Ir r m
dir r /dt
VR
90% Ir r m
Figure C. Definition of diodes
switching characteristics
τ1
τ2
r 2
τn
r1
r n
T (t)
j
p(t)
r 2
r1
rn
Figure A. Definition of switching times
T
C
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance Lσ =60nH
and Stray capacity Cσ =40pF.
Figure B. Definition of switching losses
13
Rev. 2 Oct-04
Power Semiconductors
IKA06N60T
TrenchStop series
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2004
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or
systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
14
Rev. 2 Oct-04
Power Semiconductors
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