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Q68000-A6473 [INFINEON]

NPN Silicon Switching Transistors; 硅NPN开关晶体管
Q68000-A6473
型号： Q68000-A6473
厂家： Infineon    Infineon
描述：

NPN Silicon Switching Transistors
硅NPN开关晶体管

晶体 开关 晶体管
文件： 总6页 (文件大小：159K)
中文：  中文翻译
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NPN Silicon Switching Transistors  
SMBT 2222  
SMBT 2222 A  
● High DC current gain: 0.1 mA to 500 mA  
● Low collector-emitter saturation voltage  
● Complementary types: SMBT 2907,  
SMBT 2907 A (PNP)  
Package1)  
Type  
Marking  
Ordering Code  
(tape and reel)  
Pin Configuration  
1
2
3
SMBT 2222  
SMBT 2222 A  
s1B  
s1P  
Q68000-A6481  
Q68000-A6473  
B
E
C
SOT-23  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
SMBT 2222  
SMBT 2222 A  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
VCE0  
VCB0  
VEB0  
30  
60  
5
40  
75  
6
V
Collector current  
I
C
600  
mA  
mW  
˚C  
Total power dissipation, TS = 77 ˚C  
Junction temperature  
P
tot  
330  
150  
T
j
Storage temperature range  
Tstg  
– 65 … + 150  
Thermal Resistance  
Junction - ambient2)  
R
th JA  
th JS  
≤ 290  
≤ 220  
K/W  
Junction - soldering point  
R
1)  
For detailed information see chapter Package Outlines.  
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.  
2)  
5.91  
Semiconductor Group  
1
SMBT 2222  
SMBT 2222 A  
Electrical Characteristics  
at T = 25 ˚C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
DC characteristics  
Collector-emitter breakdown voltage  
V(BR)CE0  
V(BR)CB0  
V(BR)EB0  
V
IC  
= 10 mA  
SMBT 2222  
30  
40  
–
–
–
–
SMBT 2222 A  
Collector-base breakdown voltage  
IC  
= 10 µA  
SMBT 2222  
60  
75  
–
–
–
–
SMBT 2222 A  
Emitter-base breakdown voltage  
= 10 µA  
IE  
SMBT 2222  
5
6
–
–
–
–
SMBT 2222 A  
Collector cutoff current  
ICB0  
V
V
V
V
CB = 50 V  
CB = 60 V  
CB = 50 V, T  
CB = 60 V, T  
SMBT 2222  
SMBT 2222 A  
SMBT 2222  
SMBT 2222 A  
–
–
–
–
–
–
–
–
10  
10  
10  
10  
nA  
nA  
µA  
µA  
A
A
= 150 ˚C  
= 150 ˚C  
Emitter cutoff current  
IEB0  
–
–
10  
nA  
VEB = 3 V  
DC current gain  
h
FE  
–
IC  
IC  
IC  
IC  
IC  
IC  
= 100 µA, VCE = 10 V  
1 mA, VCE = 10 V  
= 10 mA, VCE = 10 V1)  
= 150 mA, VCE = 1 V1)  
= 150 mA, VCE = 10 V1)  
= 500 mA, VCE = 10 V1)  
35  
50  
75  
50  
100  
30  
40  
–
–
–
–
–
–
–
–
–
–
–
300  
–
–
=
SMBT 2222  
SMBT 2222 A  
I
T
C
= 10 mA, VCE = 10 V,  
= 55 ˚C  
35  
–
–
A
SMBT 2222 A  
Collector-emitter saturation voltage1)  
VCEsat  
V
–
–
–
–
–
–
–
–
0.4  
0.3  
1.6  
1.0  
I
C
= 150 mA, I  
B
= 15 mA  
SMBT 2222  
SMBT 2222 A  
SMBT 2222  
SMBT 2222 A  
IC  
= 500 mA, I  
B
= 50 mA  
Base-emitter saturation voltage1)  
VBEsat  
–
0.6  
–
–
–
–
–
1.3  
1.2  
2.6  
2.0  
I
C
= 150 mA, I  
B
= 15 mA  
SMBT 2222  
SMBT 2222 A  
SMBT 2222  
SMBT 2222 A  
IC  
= 500 mA, I  
B
= 50 mA  
–
1)  
Pulse test conditions: t ≤ 300 µs, D = 2 %.  
Semiconductor Group  
2
SMBT 2222  
SMBT 2222 A  
Electrical Characteristics  
at T = 25 ˚C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
AC characteristics  
Transition frequency  
fT  
MHz  
IC  
= 20 mA, VCE = 20 V, f = 100 MHz  
SMBT 2222  
250  
300  
–
–
–
–
SMBT 2222 A  
Output capacitance  
CB = 10 V, f = 1 MHz  
C
obo  
ibo  
–
–
8
pF  
V
Input capacitance  
EB = 0.5 V, f = 1 MHz  
C
V
SMBT 2222  
SMBT 2222 A  
–
–
–
–
30  
25  
Short-circuit input impedance  
h
h
h
h
11e  
12e  
21e  
22e  
'C  
kΩ  
10–4  
–
IC  
= 1 mA, VCE = 10 V, f = 1 kHz  
SMBT 2222 A  
SMBT 2222 A  
2
–
–
8
IC  
= 10 mA, VCE = 10 V, f = 1 kHz  
0.25  
1.25  
Open-circuit reverse voltage transfer ratio  
IC  
= 1 mA, VCE = 10 V, f = 1 kHz  
SMBT 2222 A  
SMBT 2222 A  
–
–
–
–
8.0  
4.0  
IC  
= 10 mA, VCE = 10 V, f = 1 kHz  
Short-circuit forward current transfer ratio  
IC  
= 1 mA, VCE = 10 V, f = 1 kHz  
SMBT 2222 A  
SMBT 2222 A  
50  
75  
–
–
300  
375  
IC  
= 10 mA, VCE = 10 V, f = 1 kHz  
Open-circuit output admittance  
µS  
IC  
= 1 mA, VCE = 10 V, f = 1 kHz  
SMBT 2222  
5
–
35  
IC  
= 10 mA, VCE = 10 V, f = 1 kHz  
SMBT 2222 A  
25  
–
–
–
200  
150  
Collector-base time constant  
= 20 mA, VCB = 10 V, f = 31.8 MHz  
SMBT 2222 A  
rb  
c
ps  
IE  
Noise figure  
= 100 µA, VCE = 10 V, R = 1 kΩ  
F
–
–
4.0  
dB  
IC  
S
f= 1 kHz  
SMBT 2222 A  
Semiconductor Group  
3
SMBT 2222  
SMBT 2222 A  
Electrical Characteristics  
at T = 25 ˚C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
AC characteristics (continued)  
V
CC = 30 V, I  
C
= 150 mA, IB1 = 15 mA  
V
BE(off) = 0.5 V  
Delay time  
Rise time  
t
t
d
r
–
–
–
–
10  
25  
ns  
ns  
V
CC = 30 V, I  
C
= 150 mA, IB1 = IB2 = 15 mA  
Storage time  
Fall time  
t
t
stg  
f
–
–
–
–
225  
60  
ns  
ns  
Test circuits  
Delay and rise time  
Storage and fall time  
Oscillograph:  
R > 100 Ω  
C < 12 pF  
t
r < 5 ns  
Semiconductor Group  
4
SMBT 2222  
SMBT 2222 A  
Total power dissipation Ptot = f (T  
A
*; TS  
)
Collector-base capacitance Ccb = f (VCB  
)
* Package mounted on epoxy  
f = 1 MHz  
Permissible pulse load Ptot max/Ptot DC = f (t  
p
)
Transition frequency f  
T
= f (I )  
C
V
CE = 20 V  
Semiconductor Group  
5
SMBT 2222  
SMBT 2222 A  
Saturation voltage I  
C
= f (VBEsat, VCEsat  
)
DC current gain hFE = f (I )  
C
h
FE = 10  
VCE = 10 V  
Delay time t  
Rise time t  
d
r
= f (I  
C
)
Storage time tstg = f (I  
C)  
= f (I  
C
)
Fall time = f (I )  
t
f
C
Semiconductor Group  
6

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