SP000219825 [INFINEON]
Smart Power High-Side-Switch for Industrial Applications; 智能功率高边开关的工业应用
| 型号： | SP000219825 |
| 厂家： | 
Infineon |
| 描述： | Smart Power High-Side-Switch for Industrial Applications |
| 文件： | 总17页 (文件大小：359K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ISP 752 R
Smart Power High-Side-Switch
for Industrial Applications
Product Summary
Features
Overvoltage protection
Operating voltage
On-state resistance
Nominal load current
Operating temperature
V
V
R
62
6 ... 52
200
V
V
mΩ
A
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown with restart
• ESD - Protection
ON
I
1.3
L(nom)
T
-30...+85 °C
a
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection with external resistor
• Open drain diagnostic output for overtemperature
and short circuit
PG-DSO-8
• Open load detection in OFF - State
with external resistor
• CMOS compatible input
• Loss of GND and loss of V protection
bb
• Very low standby current
Application
• All types of resistive, inductive and capacitive loads
• µC compatible power switch for 12 V, 24 V and 42 V DC industrial applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input
and diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.
2006-03-09
Page 1
ISP 752 R
Block Diagram
+ V
bb
Voltage
source
V Logic
Gate
Overvoltage
protection
Current
limit
protection
OUT
Limit for
unclamped
ind. loads
Charge pump
Level shifter
Rectifier
Temperature
sensor
IN
Load
Logic
ESD
ST
miniPROFET
GND
Load GND
Signal GND
Pin
1
2
3
4
Symbol
GND
IN
OUT
ST
Function
Logic ground
Input, activates the power switch in case of logic high signal
Output to the load
Diagnostic feedback
Vbb
Vbb
Vbb
Vbb
Positive power supply voltage
Positive power supply voltage
Positive power supply voltage
Positive power supply voltage
5
6
7
8
Pin configuration
Top view
•
Vbb
1
2
3
4
8
7
6
5
GND
IN
Vbb
Vbb
Vbb
OUT
ST
2006-03-09
Page 2
ISP 752 R
Maximum Ratings at T = 25 °C, unless otherwise specified
j
Parameter
Supply voltage
Supply voltage for full short circuit protection
Continuous input voltage
Load current (Short - circuit current, see page 5) I
Symbol
Value
52
50
Unit
V
V
V
V
bb
IN
-10 ... +16
self limited
A
L
mA
°C
Current through input pin (DC)
Junction temperature
I
± 5
150
-30...+85
-40 ... +105
1.5
IN
T
T
T
P
E
j
Operating temperature
Storage temperature
a
stg
tot
AS
1)
W
mJ
Power dissipation
1)2)
125
Inductive load switch-off energy dissipation
single pulse, (see page 9 )
Tj =150 °C, I = 1 A
L
2)
3)
V
Load dump protection V
= V + V
V
LoadDump
A
S
Loaddump
R =2Ω, t =400ms, V = low or high, V =13,5V
I
d
IN
A
R = 13.5 Ω
73.5
83.5
L
R = 27 Ω
L
kV
Electrostatic discharge voltage (Human Body Model) V
according to ANSI EOS/ESD - S5.1 - 1993
ESD STM5.1 - 1998
ESD
Input pin
all other pins
± 1
± 5
Thermal Characteristics
-
-
95
70
-
83
K/W
Thermal resistance @ min. footprint
R
th(JA)
R
2
1)
Thermal resistance @ 6 cm cooling area
1
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air. (see page 17)
2
not subject to production test, specified by design
3
V
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .
Loaddump
Supply voltages higher than V
require an external current limit for the GND pin, e.g. with a
bb(AZ)
150Ω resistor in GND connection. A resistor for the protection of the input is integrated.
2006-03-09
Page 3
ISP 752 R
Unit
Electrical Characteristics
Parameter and Conditions
Symbol
Values
at T = -40...+150°C, V = 12..42V, unless otherwise specified
min.
typ. max.
bb
Load Switching Capabilities and Characteristics
On-state resistance
R
mΩ
ON
T = 25 °C, I = 1 A, V = 9...52 V
T = 150 °C
j
-
-
150
270
1.7
200
380
-
j
L
bb
1)
1.3
A
Nominal load current; Device on PCB
I
L(nom)
T = 85 °C, T ≤ 150 °C
C
j
-
-
-
-
80
80
180
200
2
Turn-on time
to 90% V
t
µs
OUT
on
R = 47 Ω
L
Turn-off time
to 10% V
t
OUT
off
R = 47 Ω
L
0.7
0.9
Slew rate on 10 to 30% V
,
dV/dt
V/µs
OUT
on
R = 47 Ω, V = 13.5 V
L
bb
2
Slew rate off 70 to 40% V
,
-dV/dt
off
OUT
R = 47 Ω, V = 13.5 V
L
bb
Operating Parameters
6
-
52
V
Operating voltage
Undervoltage shutdown of charge pump
V
V
bb(under)
T = -40...+85 °C
-
-
-
-
4
5.5
j
T = 150 °C
j
Undervoltage restart of charge pump
Standby current
V
-
4
5.5
µA
mA
I
bb(off)
T = -40...+85 °C, V = low
-
-
-
-
-
-
15
18
5
j
IN
2)
T = +150 °C , V = low
j
IN
Leakage output current (included in I
)
I
L(off)
bb(off)
V = low
IN
-
0.8
2
Operating current
I
GND
V = high
IN
1
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air. (see page 17)
2
higher current due temperature sensor
2006-03-09
Page 4
ISP 752 R
Unit
Electrical Characteristics
Parameter and Conditions
Symbol
Values
at T = -40...+150°C, V = 12..42V, unless otherwise specified
Protection Functions
Initial peak short circuit current limit (pin 5 to 3)
min.
typ. max.
bb
1)
A
I
I
L(SCp)
T = -40 °C, V = 20 V, t = 150 µs
-
-
4
-
-
6.5
-
9
-
-
j
bb
m
T = 25 °C
j
T = 150 °C
j
2)
T = -40...+150 °C, V > 40 V , ( see page 12 )
5
-
j
bb
Repetitive short circuit current limit
L(SCr)
T = T (see timing diagrams)
j
jt
V
V
< 40 V
> 40 V
-
-
6
4.5
63
-
-
-
bb
bb
59
V
Output clamp (inductive load switch off)
at V = V - V
V
ON(CL)
,
ON(CL)
OUT
bb
I
= 4 mA
bb
3)
62
-
-
Overvoltage protection
= 4 mA
V
T
bb(AZ)
jt
I
bb
150
-
-
10
-
-
°C
K
Thermal overload trip temperature
Thermal hysteresis
∆T
jt
Reverse Battery
4)
-
-
-
52
-
V
mV
Reverse battery
-V
-V
bb
600
Drain-source diode voltage (V
> V )
bb
OUT
ON
T = 150 °C
j
1
Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2
3
not subject to production test, specified by design
see also V in circuit diagram on page 8
ON(CL)
Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has
4
to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the
voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation!
Input current has to be limited (see max. ratings page 3).
2006-03-09
Page 5
ISP 752 R
Unit
Electrical Characteristics
Parameter
Symbol
Values
at T = -40...+150°C, V = 12..42V, unless otherwise specified
min.
typ. max.
j
bb
Input and Status feedback
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
Off state input current
-
0.8
-
-
-
2.2
-
-
V
V
V
0.4
-
∆V
IN(off)
1
25
µA
I
I
V = 0.7 V
IN
3
-
25
-
On state input current
IN(on)
V = 5 V
IN
5.4
6.1
V
Status output (open drain), Zener limit voltage
V
V
ST(high)
ST(low)
I
= 1.6 mA
ST
Status output (open drain), ST low voltage
T = -40...+25 °C, I = 1.6 mA
-
-
-
-
0.4
0.6
j
ST
T = 150 °C, I = 1.6 mA
j
ST
1)
Status invalid after positive input slope
= 20 V
t
t
-
120
160 µs
d(ST+)
V
bb
1)
Status invalid after negative input slope
Input resistance (see page 8)
-
2
250
3.5
400
R
5
kΩ
I
Diagnostic Characteristics
-
-
2.8
3
-
4
V
Short circuit detection voltage
V
V
R
OUT(SC)
OUT(OL)
2)
Open load detection voltage
3)
Internal output pull down
kΩ
O
( see page 9 and 14 )
V
= 4 V
-
200
-
OUT(OL)
1
2
3
no delay time after overtemperature switch off and short circuit in on-state
External pull up resistor required for open load detection in off state.
not subject to production test, specified by design
2006-03-09
Page 6
ISP 752 R
Input
level
L
Output
level
Status
Normal
L
H
H
H
H
L
operation
Short circuit
to GND
H
L
H
L
L *
Short circuit to
L
H
L
V
(in off-state)
H
H
H
bb
Overload
L
H
L
L
H **
L
H
H
H
L
Overtemperature
H
L
1)
Open Load in
off-state
L
H
Z
H
H (L )
H
*) Out ="L": V
**) Out ="H": V
< 2.8V typ.
> 2.8V typ.
OUT
OUT
Z = high impedance, potential depends on external circuit
1
with external resistor between V and OUT
bb
2006-03-09
Page 7
ISP 752 R
Inductive and overvoltage output clamp
Terms
I
+ V
bb
bb
V
Z
I
IN
V
bb
V
IN
ON
I
V
L
ON
OUT
PROFET
I
ST
OUT
ST
GND
V
GND
V
ST
IN
V
I
bb
V
GND
OUT
R
GND
V
clamped to 59V min.
ON
Input circuit (ESD protection)
Overvoltage protection of logic part
R
I
IN
ESD-
ZD
I
I
I
GND
The use of ESD zener diodes as voltage clamp
at DC conditions is not recommended
Reverse battery protection
V
=6.1V typ., V =V
=62V min.,
=150Ω
Z1
Z2 bb(AZ)
± 5V
V
bb
-
R =3.5 kΩ typ., R
I
R
Status outputGND
ST
Logic
R
I
IN
ST
OUT
+5V
Power
Inverse
Diode
RST(ON)
GND
GND
ST
R
R
L
Power GND
Signal GND
R
=150Ω, R =3.5kΩ typ.,
I
GND
ESD-
ZD
Temperature protection is not active during
inverse current
GND
2006-03-09
Page 8
ISP 752 R
disconnect with charged inductive
Open-load detection
V
load
bb
OFF-state diagnostic condition:
V
> 3V typ.; IN=low
OUT
R
EXT
V
V
high
bb
IN
OFF
OUT
PROFET
OUT
ST
GND
Open load
detection
Logic
unit
R
O
V
bb
Signal GND
GND disconnect
Inductive Load switch-off energy
dissipation
V
bb
IN
E
bb
OUT
PROFET
E
AS
ST
E
E
Load
L
GND
V
bb
IN
V
V
V
V
bb
IN
ST
GND
OUT
PROFET
L
=
ST
GND
Z
L
{
GND disconnect with GND pull up
E
R
R
L
V
bb
IN
2
Energy stored in load inductance: E = ½ * L * I
L
While demagnetizing load inductance,
the enérgy dissipated in PROFET is
L
OUT
PROFET
ST
E
= E + E - E = V * i (t) dt,
bb ON(CL) L
AS
L
R
GND
with an approximate solution for R > 0Ω:
L
V
V
V
V
ST
IN
GND
bb
I
L
* L
I
L
* R
L
E
A S
=
* (V bb +|V O U T ( C L )| ) * ln(1 +
)
2 * R
L
|V O U T ( C L )|
2006-03-09
Page 9
ISP 752 R
Typ. transient thermal impedance
=f(t ) @ min. footprint
Typ. transient thermal impedance
2
Z
=f(t ) @ 6cm heatsink area
Z
thJA
p
thJA
p
Parameter: D=t /T
Parameter: D=t /T
p
p
10 2
10 2
D=0.5
D=0.5
K/W
K/W
D=0.2
D=0.2
D=0.1
10 1
D=0.1
10 1
D=0.05
D=0.05
D=0.02
D=0.02
D=0.01
10 0
10 0
D=0.01
D=0
10 -1
10 -1
D=0
10 -2
10 -2
10 -710 -610 -510 -410 -310 -210 -110 0 10 1 10 2
10 4
10 -710 -610 -510 -410 -310 -210 -110 0 10 1 10 2
10 4
s
s
t
t
p
p
Typ. on-state resistance
Typ. on-state resistance
R
= f(T ) ; V = 13,5V ; V = high
R
= f(V ); I = 1 A ; V = high
ON
j
bb
in
ON
bb
L
in
300
400
mΩ
mΩ
150°C
300
200
150
100
50
250
200
150
100
50
25°C
-40°C
0
0
-40 -20
0
20 40 60 80 100 120
160
0
5
10 15 20 25 30 35 40
50
°C
j
V
bb
V
T
2006-03-09
Page 10
ISP 752 R
Typ. turn off time
= f(T ); R = 47Ω
Typ. turn on time
= f(T ); R = 47Ω
t
t
off
j
L
on
j
L
160
160
µs
µs
9V
120
100
80
60
40
20
0
120
100
80
60
40
20
0
13.5V
9...42V
42V
-40 -20
0
20 40 60 80 100 120
160
-40 -20
0
20 40 60 80 100 120
160
°C
j
°C
j
T
T
Typ. slew rate on
Typ. slew rate off
dV/dt = f(T ) ; R = 47 Ω
dV/dt = f(T ); R = 47 Ω
on
j
L
off
j
L
2
3.5
V/µs
V/µs
1.6
2.5
2
1.4
1.2
1
42V
1.5
1
0.8
0.6
0.4
0.2
0
42V
13.5V
9V
13.5V
9V
0.5
0
-40 -20
0
20 40 60 80 100 120
160
-40 -20
0
20 40 60 80 100 120
160
°C
j
°C
j
T
T
2006-03-09
Page 11
ISP 752 R
Typ. standby current
= f(T ) ; V = 42V ; V = low
Typ. leakage current
I = f(T ) ; V = 42V ; V = low
L(off)
I
bb(off)
j
bb
IN
j
bb
IN
10
2.5
µA
µA
6
4
2
1.5
1
0.5
0
0
-40 -20
0
20 40 60 80 100 120
160
-40 -20
0
20 40 60 80 100 120
160
°C
j
°C
T
j
T
Typ. initial short circuit shutdown time
Typ. initial peak short circuit current limit
= f(V )
t
= f(T
) ; V = 20V
I
off(SC)
j,start bb
L(SCp)
bb
4
10
ms
A
-40°C
3
2.5
2
25°C
150°C
6
4
2
0
1.5
1
0.5
0
-40 -20
0
20 40 60 80 100 120
160
0
10
20
30
40
60
°C
j
V
T
V
bb
2006-03-09
Page 12
ISP 752 R
Typ. input current
= f(T ); V = 13,5V; V = low/high
Typ. input current
I = f(V ); V = 13.5V
I
IN(on/off)
j
bb
= 5V
IN
IN
IN
bb
V
≤ 0,7V; V
INlow
INhigh
50
12
µA
µA
-40...25°C
150°C
8
30
20
10
0
on
off
6
4
2
0
-40 -20
0
20 40 60 80 100 120
160
0
1
2
3
4
5
6
8
°C
j
V
V
T
IN
Typ. input threshold voltage
Typ. input threshold voltage
V
= f(T ) ; V = 13,5V
V
= f(V ) ; T = 25°C
IN(th)
j
bb
IN(th)
bb j
2
2
V
V
on
off
on
1.6
1.4
1.2
1
1.6
1.4
1.2
1
off
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
-40 -20
0
20 40 60 80 100 120
160
°C
j
0
10
20
30
50
V
T
V
bb
2006-03-09
Page 13
ISP 752 R
Maximum allowable load inductance
for a single switch off
Typ. status delay time
= f(V ); T = 25°C
t
d(ST)
bb
j
L = f(I ); T
=150°C, R =0Ω
L
jstart
L
2000
300
µs
mH
td(ST-)
td(ST+)
250
1600
1400
1200
1000
800
225
200
175
150
125
100
75
600
42V
400
13,5V
50
200
25
0
0
0
0.25
0.5
0.75
1
1.5
0
10
20
30
50
A
V
I
V
L
bb
Maximum allowable inductive switch-off
energy, single pulse
Typ. internal output pull down
R = f(V )
O
bb
E
= f(I ); T
= 150°C, V = 13,5V
AS
L
jstart bb
1800
800
mJ
kΩ
1400
1200
1000
800
600
400
200
0
600
500
400
300
200
100
0
150°C
25°C
-40°C
0
0.25
0.5
0.75
1
1.5
0
10
20
30
50
A
V
I
V
bb
L
2006-03-09
Page 14
ISP 752 R
Timing diagrams
Figure 2b: Switching a lamp,
Figure 1a: Vbb turn on:
IN
IN
V
bb
ST
V
I
L
OUT
ST
I
L
t
Figure 2a: Switching a resistive load,
turn-on/off time and slew rate definition
Figure 2c: Switching an inductive load
IN
IN
V
OUT
ST
90%
t
dV/ dtoff
on
dV/ dton
t
off
V
OUT
10%
I L
t
I
L
ST
2006-03-09
Page 15
ISP 752 R
Figure 3b: Short circuit in on-state
shut down by overtemperature, restart by cooling
Figure 3a: Turn on into short circuit,
shut down by overtemperature, restart by cooling
IN
IN
V
OUT
V
O U T
Output
I
short to GND
n o rm a l
o p e ra tio n
O u tp u t s h o rt to G N D
I L
L( SCp
)
I
I
L( SCr
)
L
I
L (S C r)
t m
ST
S T
t
t
t
d(ST+)
Heating up of the chip may require several milliseconds, depending
on external conditions.
Figure 5: Undervoltage restart of charge pump
Figure 4: Overtemperature:
V o n
Reset if T < T
j
jt
IN
ST
V b b ( u c p )
V
b b ( u n d er )
I
L
V b b
T
J
t
2006-03-09
Page 16
ISP 752 R
Package and ordering code
all dimensions in mm
Package:
Ordering code:
SP000219825
PG-DSO-8
Printed circuit board (FR4, 1.5mm thick, one
2
layer 70µm, 6cm active heatsink area ) as
a reference for max. power dissipation P
tot
and thermal
nominal load current I
L(nom)
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
resistance R
thja
© Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee
of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your
nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide
(see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the
types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
2006-03-09
Page 17
相关型号：
SP000219835
Smart High-Side Power Switch For Industrial Applications Four Channels: 4 x 90mз
INFINEON
©2020 ICPDF网 联系我们和版权申明