SP000917596 [INFINEON]
Small Signal Field-Effect Transistor,;
| 型号： | SP000917596 |
| 厂家： | 
Infineon |
| 描述： | Small Signal Field-Effect Transistor, |
| 文件： | 总9页 (文件大小：197K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7002DW
OptiMOS™ Small-Signal-Transistor
Features
Product Summary
V DS
60
3
V
• Dual N-channel
R DS(on),max
V GS=10 V
V GS=4.5 V
Ω
• Enhancement mode
• Logic level
4
• Avalanche rated
I D
0.3
A
• Fast switching
• Qualified according to AEC Q101
PG-SOT363
• 100% lead-free; RoHS compliant
6
5
4
• Halogen-free according to IEC61249-2-21
1
2
3
Type
Package
Tape and Reel Information
Marking
HalogenFree Packing
Yes Non Dry
2N7002DW PG-SOT363 H6327: 3000 pcs/reel
X8s
Parameter 1)
Value
Symbol Conditions
Unit
I D
T A=25 °C
T A=70 °C
Continuous drain current
0.30
0.24
A
I D,pulse
T A=25 °C
Pulsed drain current
1.2
1.3
E AS
I D=0.3 A, R GS=25 Ω
Avalanche energy, single pulse
mJ
I D=0.3 A, V DS=48 V,
di /dt =200 A/µs,
Reverse diode dv /dt
dv /dt
6
kV/µs
V
T
j,max=150 °C
V GS
Gate source voltage
±20
ESD class
JESD22-A114 (HBM)
class 0 (<250V)
0.5
P tot
T A=25 °C
Power dissipation
W
T j, T stg
Operating and storage temperature
-55 ... 150
55/150/56
°C
IEC climatic category; DIN IEC 68-1
1) Remark: one of both transistors in operation.
Rev.2.2
page 1
2011-06-16
2N7002DW
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Thermal characteristics
Thermal resistance,
junction - minimal footprint2)
R thJA
-
-
250 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS= 0 V, I D=250 µA
Drain-source breakdown voltage
Gate threshold voltage
60
1.5
-
-
2.1
-
-
V
V GS(th)
V DS=VGS, I D=250 µA
2.5
0.1
V DS=60 V, V GS=-10 V,
T j=25 °C
I D (off)
Drain-source leakage current
µA
V
V
DS=60 V,
-
-
5
GS=0 V, T j=150 °C
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
-
-
1
10
4
nA
R DS(on) V GS=4.5 V, I D=0.25 A
Drain-source on-state resistance
2.0
1.6
0.36
Ω
V
GS=10 V, I D=0.5 A
-
3
|V DS|>2|I D|R DS(on)max
I D=0.24 A
,
g fs
Transconductance
0.2
-
S
2) Perfomed on a 40x40mm2 FR4 PCB with both sided Cu sense-force traces, each 1mm wide, 70μm thick and 20mm
long.
Rev.2.2
page 2
2011-06-16
2N7002DW
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
13
4.1
2.0
3.0
3.3
5.5
3.1
20
pF
ns
V GS=0 V, V DS=25 V,
f =1 MHz
C oss
Crss
t d(on)
t r
6
3
4.5
5
V
DD=30 V, V GS=10 V,
I D=0.5 A, R G=6 Ω
t d(off)
t f
Turn-off delay time
Fall time
9
5
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
0.05
0.2
0.4
4.0
0.1
0.4
0.6
-
nC
Q gd
V
V
DD=48 V, I D=0.5 A,
GS=0 to 10 V
Q g
V plateau
Gate plateau voltage
V
A
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
0.3
1.2
T A=25 °C
I S,pulse
V GS=0 V, I F=0.5 A,
T j=25 °C
V SD
Diode forward voltage
-
0.96
1.2
V
t rr
Reverse recovery time
-
-
8.5
2.4
13
4
ns
V R=30 V, I F=0.5 A,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
nC
Rev.2.2
page 3
2011-06-16
2N7002DW
1 Power dissipation
2 Drain current
P
tot=f(T A)
I D=f(T A); V GS≥10 V
0.35
0.3
0.5
0.4
0.3
0.2
0.1
0.25
0.2
0.15
0.1
0.05
0
0
0
40
80
120
160
0
40
80
120
160
T A [°C]
T A [°C]
3 Safe operating area
I D=f(V DS); T A=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJA=f(t p)
parameter: D =t p/T
101
103
limited by on-state
resistance
1 µs
100
10-1
10-2
0.5
10 µs
102
0.2
100 µs
1 ms
0.1
0.05
0.02
single pulse
10 ms
DC
0.01
101
100
10-3
1
10-5 10-4 10-3 10-2 10-1 100 101 102 103
10
100
V DS [V]
t p [s]
Rev.2.2
page 4
2011-06-16
2N7002DW
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
6
0.6
5 V
7 V
10 V
5
0.5
4.5 V
2.9 V
3.2 V
3.5 V
4 V
4 V
4
3
2
1
0
0.4
0.3
0.2
0.1
0
3.5 V
4.5 V
5 V
7 V
10 V
3.2 V
2.9 V
0
0.1
0.2
0.3
0.4
0.5
0
1
2
3
4
5
V DS [V]
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
0.6
0.5
0.4
0.3
0.2
0.1
0
0.5
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0
1
2
3
4
5
0.00
0.10
0.20
ID [A]
0.30
0.40
V GS [V]
Rev.2.2
page 5
2011-06-16
2N7002DW
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
V GS(th)=f(T j); V DS=VGS; I D=250 µA
parameter: I D
R
DS(on)=f(T j); I D=0.3 A; V GS=10 V
6.0
5.0
3.2
2.8
2.4
2
98 %
typ
4.0
98 %
3.0
1.6
2 %
1.2
0.8
0.4
0
2.0
typ
1.0
0.0
-60
-20
20
60
100
140
-60
-20
20
60
100
140
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
)
parameter: T j
102
150 °C, 98%
100
10-1
10-2
150 °C
25 °C
Ciss
25 °C, 98%
101
Coss
Crss
100
10-3
0
0
10
20
30
0.4
0.8
V SD [V]
1.2
1.6
V DS [V]
Rev.2.2
page 6
2011-06-16
2N7002DW
13Avalanche characteristics
AS =f(t AV ); R GS =25 Ω
14 Typ. gate charge
V GS=f(Q gate); I D=0.5 A pulsed
parameter: V DD
I
parameter: TJ(start)
100
10
9
8
30 V
25 °C
7
100 °C
10-1
125 °C
12 V
48 V
6
5
4
3
2
1
0
10-2
10-3
100
101
102
103
0
0.1
0.2
0.3
0.4
0.5
tAV [µs]
Q gate [nC]
15 Drain-source breakdown voltage
V
BR(DSS)=f(T j); I D=250 µA
70
65
60
55
50
-40
0
40
80
120
160
T j [°C]
Rev.2.2
page 7
2011-06-16
2N7002DW
SOT363
Package Outline:
Footprint:
Packing:
Rev.2.2
page 8
2011-06-16
2N7002DW
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev.2.2
page 9
2011-06-16
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