概述
规格参数
数据手册SP001163082 概述
Power Field-Effect Transistor, 功率场效应晶体管
SP001163082 规格参数
| 生命周期： | Active | 包装说明： | , |
| Reach Compliance Code： | compliant | 风险等级： | 5.76 |
| Base Number Matches： | 1 |
SP001163082 数据手册
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PDF下载MOSFET
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor
CoolMOS™ꢀC6
650VꢀCoolMOS™ꢀC6ꢀPowerꢀTransistor
IPL65R650C6S
DataꢀSheet
Rev.ꢀ2.0
Final
PowerꢀManagementꢀ&ꢀMultimarket
650VꢀCoolMOS™ꢀC6ꢀPowerꢀTransistor
IPL65R650C6S
ThinPAKꢀ5x6
1ꢀꢀꢀꢀꢀDescription
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀCoolMOS™ꢀC6ꢀseriesꢀcombinesꢀthe
experienceꢀofꢀtheꢀleadingꢀSJꢀMOSFETꢀsupplierꢀwithꢀhighꢀclassꢀinnovation.
TheꢀofferedꢀdevicesꢀprovideꢀallꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSJꢀMOSFET
whileꢀnotꢀsacrificingꢀeaseꢀofꢀuse.ꢀExtremelyꢀlowꢀswitchingꢀandꢀconduction
lossesꢀmakeꢀswitchingꢀapplicationsꢀevenꢀmoreꢀefficient,ꢀmoreꢀcompact,
lighterꢀandꢀcooler.
Features
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss
•ꢀVeryꢀhighꢀcommutationꢀruggedness
•ꢀEasyꢀtoꢀuse/drive
•ꢀPb-freeꢀplating,ꢀHalogenꢀfreeꢀmoldꢀcompound
•ꢀQualifiedꢀforꢀindustrialꢀgradeꢀapplicationsꢀaccordingꢀtoꢀJEDECꢀ(J-STD20
andꢀJESD22)
Applications
PFCꢀstages,ꢀhardꢀswitchingꢀPWMꢀstagesꢀandꢀresonantꢀswitchingꢀPWM
stagesꢀforꢀe.g.ꢀPCꢀSilverbox,ꢀAdapter,ꢀLCDꢀ&ꢀPDPꢀTV,ꢀLighting,ꢀServer,
TelecomꢀandꢀUPS.
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseperateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS @ Tj,max
RDS(on),max
Qg,typ
Value
700
0.65
23
Unit
V
Ω
nC
A
ID,pulse
16.6
2
Eoss@400V
Body diode di/dt
µJ
500
A/µs
Typeꢀ/ꢀOrderingꢀCode
Package
ThinPAK 5x6 SMD
Marking
RelatedꢀLinks
see Appendix A
IPL65R650C6S
65C6650
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2014-07-08
650VꢀCoolMOS™ꢀC6ꢀPowerꢀTransistor
IPL65R650C6S
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2014-07-08
650VꢀCoolMOS™ꢀC6ꢀPowerꢀTransistor
IPL65R650C6S
2ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
-
-
-
-
6.7
4.2
TC = 25°C
A
Continuous drain current1)
ID
TC = 100°C
Pulsed drain current2)
ID,pulse
EAS
-
-
-
-
-
-
-
-
-
-
16.6
142
0.21
1.3
A
TC=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
mJ
mJ
A
ID =1.3A; VDD = 50V
EAR
ID =1.3A; VDD = 50V
-
IAR
dv/dt
50
V/ns VDSꢀ=0...520V
-20
-30
-
-
20
30
static;
V
Gate source voltage
VGS
AC (f>1 Hz)
Power dissipation (non FullPAK)
Operating and storage temperature
Continuous diode forward current
Diode pulse current2)
Reverse diode dv/dt3)
Maximum diode commutation speed3) dif/dt
Ptot
-
-
-
-
-
-
-
56.8
150
5.8
W
°C
A
TC=25°C
-
Tj,ꢀTstg
IS
-40
-
-
-
-
TC=25°C
TC = 25°C
IS,pulse
16.2
15
A
dv/dt
V/ns VDSꢀ=0...400V,ꢀISD<=IS,ꢀTj=25°C
A/µs VDSꢀ=0...400V,ꢀISD<=IS,ꢀTj=25°C
500
3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristicsꢀ(nonꢀFullPAK)
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
-
2.2
°C/W -
Device on 40mm*40mm*1.5 epoxy
PCB FR4 with 6cm2 (one layer 70µm
°C/W thick) copper area for drain
connection and cooling. PCB is
vertical without blown air.
Thermal resistance, junction - ambient RthJA
-
-
35
-
62
Soldering temperature, wavesoldering
Tsold
260
°C
reflow MSL1
only allowed at leads
1) Limited by Tj max. Maximum duty cycle D=0.75
2) Pulse width tp limited by Tj,max
3)ꢀVDClink=400V;ꢀVDS,peak<V(BR)DSS;ꢀidenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀRG
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2014-07-08
650VꢀCoolMOS™ꢀC6ꢀPowerꢀTransistor
IPL65R650C6S
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
650
Typ.
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
V(GS)th
-
V
V
VGS=0V,ꢀID=1mA
2.50
3
3.50
VDS=VGS,ꢀID=0.21mA
-
-
-
10
1
-
VDS=650V,ꢀVGS=0V,ꢀTj=25°C
VDS=650V,ꢀVGS=0V,ꢀTj=150°C
Zero gate voltage drain current
Gate-source leakage curent
Drain-source on-state resistance
Gate resistance
IDSS
µA
nA
Ω
IGSS
-
-
100
VGS=20V,ꢀVDS=0V
-
-
0.59
1.52
0.65
-
VGS=10V,ꢀID=2.1A,ꢀTj=25°C
VGS=10V,ꢀID=2.1A,ꢀTj=150°C
RDS(on)
RG
-
17.5
-
Ω
f=1ꢀMHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
440
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
pF
pF
VGS=0V,ꢀVDS=100V,ꢀf=1MHz
VGS=0V,ꢀVDS=100V,ꢀf=1MHz
Coss
30
Effective output capacitance, energy
related1)
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
21
88
12
9
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
VGS=0V,ꢀVDS=0...520V
Effective output capacitance, time
related2)
ID=constant,ꢀVGS=0V,ꢀVDS=0...520V
VDD=400V,ꢀVGS=10V,ꢀID=3.2A,
RG=6.8Ω
Turn-on delay time
Rise time
VDD=400V,ꢀVGS=10V,ꢀID=3.2A,
RG=6.8Ω
VDD=400V,ꢀVGS=10V,ꢀID=3.2A,
RG=6.8Ω
Turn-off delay time
Fall time
td(off)
tf
80
13
VDD=400V,ꢀVGS=10V,ꢀID=3.2A,
RG=6.8Ω
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
2.5
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=520V,ꢀID=3.2A,ꢀVGS=0ꢀtoꢀ10V
VDD=520V,ꢀID=3.2A,ꢀVGS=0ꢀtoꢀ10V
VDD=520V,ꢀID=3.2A,ꢀVGS=0ꢀtoꢀ10V
VDD=520V,ꢀID=3.2A,ꢀVGS=0ꢀtoꢀ10V
Qgd
11
Qg
21
Gate plateau voltage
Vplateau
5.5
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ80%ꢀV(BR)DSS
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ80%ꢀV(BR)DSS
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2014-07-08
650VꢀCoolMOS™ꢀC6ꢀPowerꢀTransistor
IPL65R650C6S
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
0.9
270
2
Max.
Diode forward voltage
VSD
trr
-
-
-
-
-
-
-
-
V
VGS=0V,ꢀIF=3.2A,ꢀTf=25°C
Reverse recovery time
ns
µC
A
VR=400V,ꢀIF=3.2A,ꢀdiF/dt=100A/µs
VR=400V,ꢀIF=3.2A,ꢀdiF/dt=100A/µs
VR=400V,ꢀIF=3.2A,ꢀdiF/dt=100A/µs
Reverse recovery charge
Peak reverse recovery current
Qrr
Irrm
13
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2014-07-08
650VꢀCoolMOS™ꢀC6ꢀPowerꢀTransistor
IPL65R650C6S
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
60
102
50
40
30
20
10
0
101
1 µs
10 µs
100
100 µs
10-1
10-2
10-3
1 ms
10 ms
DC
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
102
101
101
100
1 µs
0.5
100
10 µs
0.2
100 µs
0.1
0.05
0.02
10-1
10-2
10-3
1 ms
10-1
0.01
single pulse
10 ms
DC
10-2
100
101
102
103
10-5
10-4
10-3
10-2
10-1
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2014-07-08
650VꢀCoolMOS™ꢀC6ꢀPowerꢀTransistor
IPL65R650C6S
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
20
12
20 V
10 V
20 V
10 V
18
16
14
12
10
8
8 V
10
8 V
7 V
8
6
4
2
0
7 V
6 V
5.5 V
6 V
6
5 V
5.5 V
5 V
4
4.5 V
2
4.5 V
0
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
3.0
2.00
2.8
2.6
1.80
1.60
1.40
1.20
10 V
6 V
7 V
6.5 V
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
5.5 V
1.00
98%
typ
0.80
0.60
0.40
0.20
0.00
20 V
0
2
4
6
8
10
12
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=2.1ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2014-07-08
650VꢀCoolMOS™ꢀC6ꢀPowerꢀTransistor
IPL65R650C6S
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
18
10
9
8
16
14
12
10
8
25 °C
120 V
7
480 V
6
5
4
3
2
1
0
150 °C
6
4
2
0
0
2
4
6
8
10
12
0
5
10
15
20
25
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=3.2ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
102
160
140
120
100
80
101
125 °C
25 °C
60
100
40
20
10-1
0
0.0
0.5
1.0
1.5
2.0
25
50
75
100
125
150
VSDꢀ[V]
Tjꢀ[°C]
IF=f(VSD);ꢀparameter:ꢀTj
EAS=f(Tj);ꢀID=1.3ꢀA;ꢀVDD=50ꢀV
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2014-07-08
650VꢀCoolMOS™ꢀC6ꢀPowerꢀTransistor
IPL65R650C6S
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
740
104
720
700
680
660
640
620
600
580
103
Ciss
102
Coss
101
Crss
100
-75 -50 -25
0
25
50
75 100 125 150 175
0
100
200
300
400
500
Tjꢀ[°C]
VDSꢀ[V]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
100
200
300
400
500
VDSꢀ[V]
Eoss=f(VDS
)
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2014-07-08
650VꢀCoolMOS™ꢀC6ꢀPowerꢀTransistor
IPL65R650C6S
6ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V,I
VDS
Rg1
VDS(peak)
VDS
trr
VDS
IF
tF
tS
dIF / dt
Rg 2
IF
t
10%Irrm
Q
F
Q
S
IF
dI / dt
rr
trr =tF +tS
rr
Irrm
Q =QF +Q
S
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2014-07-08
650VꢀCoolMOS™ꢀC6ꢀPowerꢀTransistor
IPL65R650C6S
7ꢀꢀꢀꢀꢀPackageꢀOutlines
DOCUMENT NO.
Z8B00172997
0
SCALE
MILLIMETERS
INCHES
DIM
MIN
0.90
0.30
0.00
0.10
4.90
4.11
5.90
2.60
0.20
MAX
1.10
0.50
0.05
0.30
5.10
4.31
6.10
2.80
0.40
MIN
MAX
0.043
0.020
0.002
0.012
0.201
0.170
0.240
0.110
0.016
1
A
b
0.035
0.012
0.000
0.004
0.193
0.162
0.232
0.102
0.008
0
1
b1
c
2mm
D
EUROPEAN PROJECTION
D1
E
E1
E2
e
1.27 (BSC)
0.05 (BSC)
K1
K2
L
1.80
0.30
0.45
0.45
2.00
0.50
0.65
0.65
0.071
0.012
0.018
0.018
0.079
0.020
0.026
0.026
ISSUE DATE
17-04-2014
REVISION
L1
N
01
8
8
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀThinPAKꢀ5x6ꢀSMD,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
12
Rev.ꢀ2.0,ꢀꢀ2014-07-08
650VꢀCoolMOS™ꢀC6ꢀPowerꢀTransistor
IPL65R650C6S
8ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSꢀWebpage:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
13
Rev.ꢀ2.0,ꢀꢀ2014-07-08
650VꢀCoolMOS™ꢀC6ꢀPowerꢀTransistor
IPL65R650C6S
RevisionꢀHistory
IPL65R650C6S
Revision:ꢀ2014-07-08,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
2.0
Subjects (major changes since last revision)
Release of final version
2014-07-08
WeꢀListenꢀtoꢀYourꢀComments
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Publishedꢀby
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81726ꢀMünchen,ꢀGermany
©ꢀ2014ꢀInfineonꢀTechnologiesꢀAG
AllꢀRightsꢀReserved.
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respectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplication
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Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
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aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
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Final Data Sheet
14
Rev.ꢀ2.0,ꢀꢀ2014-07-08
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