IRGP4063DPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; 绝缘栅双极型晶体管，超快软恢复二极管
| 型号： | IRGP4063DPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 文件： | 总10页 (文件大小：779K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97210
IRGP4063DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (ON) Trench IGBT Technology
C
VCES = 600V
• Low switching losses
• Maximum Junction temperature 175 °C
• 5 µS short circuit SOA
IC = 48A, TC = 100°C
• SquareRBSOA
G
tSC ≥ 5µs, TJ(max) = 175°C
• 100% of the parts tested for 4X rated current (ILM
• Positive VCE (ON) Temperature co-efficient
• Ultra fast soft Recovery Co-Pak Diode
• Tightparameterdistribution
)
E
VCE(on) typ. = 1.65V
n-channel
• LeadFreePackage
Benefits
C
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses
• RuggedtransientPerformanceforincreasedreliability
• ExcellentCurrentsharinginparalleloperation
• Low EMI
E
C
G
TO-247AC
G
C
E
Gate
Collector
Emitter
Absolute Maximum Ratings
Parameter
Max.
600
96
Units
Collector-to-Emitter Voltage
V
VCES
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
IC @ TC = 25°C
48
IC @ TC = 100°C
192
192
96
ICM
Clamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
A
ILM
IF @ TC = 25°C
48
IF @ TC = 100°C
192
±20
±30
330
170
IFM
V
VGE
W
PD @ TC = 25°C
PD @ TC = 100°C
-55 to +175
TJ
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
°C
TSTG
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
80
Max.
0.45
0.92
–––
Units
Rθ (IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
°C/W
JC
Rθ (Diode)
JC
Rθ
CS
Rθ
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
JA
1
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05/11/06
IRGP4063DPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig
CT6
Parameter
Collector-to-Emitter Breakdown Voltage
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 150µA
V(BR)CES
600
—
—
—
—
4.0
—
—
—
—
—
—
—
—
0.30
1.65
2.0
—
V
∆V(BR)CES/∆TJ
V
GE = 0V, IC = 1mA (25°C-175°C)
CT6
Temperature Coeff. of Breakdown Voltage
—
V/°C
IC = 48A, VGE = 15V, TJ = 25°C
IC = 48A, VGE = 15V, TJ = 150°C
IC = 48A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 1.4mA
5,6,7
2.14
—
VCE(on)
VGE(th)
Collector-to-Emitter Saturation Voltage
V
9,10,11
2.05
—
—
Gate Threshold Voltage
6.5
—
V
mV/°C
S
9, 10,
∆
∆
VGE(th)/ TJ
V
CE = VGE, IC = 1.0mA (25°C - 175°C)
11, 12
Threshold Voltage temp. coefficient
Forward Transconductance
-21
32
VCE = 50V, IC = 48A, PW = 80µs
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 175°C
IF = 48A
gfe
—
ICES
Collector-to-Emitter Leakage Current
1.0
150
1000
2.91
—
µA
450
1.95
1.45
—
VFM
IGES
8
Diode Forward Voltage Drop
V
IF = 48A, TJ = 175°C
VGE = ±20V
Gate-to-Emitter Leakage Current
±100
nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig
24
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min. Typ. Max. Units
Conditions
Qg
IC = 48A
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
95
140
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
V
GE = 15V
CT1
28
42
nC
µJ
ns
VCC = 400V
35
53
IC = 48A, VCC = 400V, VGE = 15V
RG = 10Ω, L = 200µH, LS = 150nH, TJ = 25°C
Energy losses include tail & diode reverse recovery
IC = 48A, VCC = 400V, VGE = 15V
CT4
CT4
625
1141
1275 1481
1900 2622
60
40
78
56
176
46
—
—
—
—
—
—
—
—
—
—
Ω
G = 10 , L = 200µH, LS = 150nH, TJ = 25°C
R
td(off)
tf
Turn-Off delay time
Fall time
145
35
Eon
Eoff
Etotal
td(on)
tr
IC = 48A, VCC = 400V, VGE=15V
13, 15
CT4
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
1625
1585
3210
55
Ω
RG=10 , L=200µH, LS=150nH, TJ = 175°C
µJ
ns
pF
Energy losses include tail & diode reverse recovery
IC = 48A, VCC = 400V, VGE = 15V
RG = 10Ω, L = 200µH, LS = 150nH
TJ = 175°C
WF1, WF2
14, 16
CT4
45
td(off)
tf
WF1
Turn-Off delay time
Fall time
165
45
WF2
Cies
Coes
Cres
V
GE = 0V
23
Input Capacitance
3025
245
90
VCC = 30V
Output Capacitance
Reverse Transfer Capacitance
f = 1.0Mhz
TJ = 175°C, IC = 192A
4
V
CC = 480V, Vp =600V
Rg = 10Ω, VGE = +15V to 0V
CC = 400V, Vp =600V
RBSOA
SCSOA
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
FULL SQUARE
CT2
V
22, CT3
WF4
5
—
—
µs
Rg = 10Ω, VGE = +15V to 0V
TJ = 175°C
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
845
115
40
—
—
—
µJ
ns
A
17, 18, 19
20, 21
WF3
VCC = 400V, IF = 48A
Ω
VGE = 15V, Rg = 10 , L =200µH, Ls = 150nH
Irr
Peak Reverse Recovery Current
Notes:
VCC = 80% (VCES), VGE = 20V, L = 200µH, RG = 10Ω.
This is only applied to TO-247AC package.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
2
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IRGP4063DPbF
100
90
80
70
60
50
40
30
20
10
0
350
300
250
200
150
100
50
0
0
25 50 75 100 125 150 175 200
(°C)
0
25 50 75 100 125 150 175 200
T
(°C)
T
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
1000
1000
10µsec
100
100
10
1
100µsec
1msec
10
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
1000
10
100
(V)
1000
V
(V)
V
CE
CE
Fig. 3 - Forward SOA
TC = 25°C, TJ ≤ 175°C; VGE =15V
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE =15V
200
180
160
140
120
100
80
200
180
160
140
120
100
80
V
= 18V
GE
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
60
60
40
40
20
20
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
TJ = 25°C; tp = 80µs
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3
IRGP4063DPbF
200
200
180
160
140
120
100
80
V
= 18V
180
160
140
120
100
80
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
-40°c
25°C
175°C
60
60
40
40
20
20
0
0
0
2
4
6
8
10
0.0
1.0
2.0
(V)
3.0
4.0
V
F
V
(V)
CE
Fig. 7 - Typ. IGBT Output Characteristics
Fig. 8 - Typ. Diode Forward Characteristics
TJ = 175°C; tp = 80µs
tp = 80µs
20
18
16
14
12
20
18
16
14
12
I
I
I
= 24A
= 48A
= 96A
I
I
I
= 24A
= 48A
= 96A
CE
CE
CE
CE
CE
CE
10
8
10
8
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
20
18
16
14
12
10
8
200
180
160
140
120
100
80
T
= 25°C
J
T
= 175°C
J
I
I
I
= 24A
CE
CE
CE
= 48A
= 96A
6
60
4
40
2
20
0
0
5
10
15
20
0
5
10
15
V
(V)
V
(V)
GE
GE
Fig. 11 - Typical VCE vs. VGE
Fig. 12 - Typ. Transfer Characteristics
CE = 50V; tp = 10µs
TJ = 175°C
V
4
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IRGP4063DPbF
6000
5000
4000
3000
2000
1000
0
1000
100
10
E
OFF
td
OFF
E
ON
td
ON
t
F
t
R
0
50
100
150
0
20
40
60
80
100
I
(A)
C
I
(A)
C
Fig. 13 - Typ. Energy Loss vs. IC
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V
5000
1000
4500
td
OFF
E
OFF
4000
E
t
ON
R
3500
3000
2500
2000
1500
1000
td
ON
100
t
F
10
0
25
50
75
100
125
0
25
50
75
(Ω)
100
125
R
G
Rg (Ω)
Fig. 16 - Typ. Switching Time vs. RG
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 48A; VGE = 15V
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 48A; VGE = 15V
45
45
40
40
35
30
25
20
15
10
Ω
R
10
G =
R
35
30
25
20
15
10
5
Ω
22
G =
Ω
47
R
G =
Ω
100
R
G =
0
0
20
40
60
80
100
0
25
50
75
Ω)
100
125
I
(A)
R
(
F
G
Fig. 17 - Typ. Diode IRR vs. IF
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C
TJ = 175°C
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5
IRGP4063DPbF
45
40
35
30
25
20
15
10
4000
3500
3000
2500
2000
1500
1000
96A
10
Ω
48A
100
Ω
22
Ω
47
Ω
24A
0
500
1000
1500
0
200
400
600
800
1000
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig. 20 - Typ. Diode QRR vs. diF/dt
CC = 400V; VGE = 15V; TJ = 175°C
Fig. 19 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 48A; TJ = 175°C
V
400
350
300
250
200
150
100
50
900
800
18
16
14
12
10
8
R
R
= 10Ω
= 22Ω
G
700
600
500
400
300
200
100
0
G
R
G
= 47Ω
G
R
= 100Ω
6
4
0
20
40
60
80
100
8
10
12
14
(V)
16
18
I
(A)
V
F
GE
Fig. 22 - VGE vs. Short Circuit Time
Fig. 21 - Typ. Diode ERR vs. IF
VCC = 400V; TC = 25°C
TJ = 175°C
10000
1000
100
16
14
12
10
8
V
V
= 300V
= 400V
Cies
CES
CES
Coes
Cres
6
4
2
10
0
0
20
40
60
(V)
80
100
0
25
50
75
100
V
Q
, Total Gate Charge (nC)
CE
G
Fig. 24 - Typical Gate Charge vs. VGE
Fig. 23 - Typ. Capacitance vs. VCE
ICE = 48A; L = 600µH
VGE= 0V; f = 1MHz
6
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IRGP4063DPbF
1
0.1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
0.0872 0.000114
0.1599 0.001520
0.02
0.01
0.01
τ
J τJ
τ
τ
Cτ
τ
1τ1
τ
2 τ2
3τ3
0.2020 0.020330
SINGLE PULSE
( THERMAL RESPONSE )
Ci= τi/Ri
0.001
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.10
0.05
0.1
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
0.2774 0.000908
0.02
0.01
τ
J τJ
τ
τ
Cτ
0.01
0.001
0.0001
τ
1τ1
τ
2 τ2
3τ3
0.3896 0.003869
0.2540 0.030195
Ci= τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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7
IRGP4063DPbF
L
L
80 V
VCC
DUT
DUT
480V
0
Rg
1K
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4x
- 5V
DC
360V
DUT /
DRIVER
VCC
DUT
Rg
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
V
CC
C force
400µH
R =
I
CM
D1
10K
C sense
DUT
VCC
G force
DUT
0.0075µ
Rg
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
Fig.C.T.6 - BVCES Filter Circuit
8
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IRGP4063DPbF
600
500
400
300
200
100
0
120
100
80
700
600
500
400
300
200
100
0
140
120
100
80
tr
TEST
tf
60
90% test
60
90% ICE
5% VCE
40
40
10% test
20
20
5% VCE
5% ICE
EOFF Loss
0.60
0
0
EON
-100
-20
-100
-20
7.00
-0.40
0.10
1.10
6.20
6.40
6.60
6.80
Time(µs)
Time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 175°C using Fig. CT.4
600
500
400
300
200
100
0
600
60
50
40
500
400
300
200
100
0
ICE
VCE
QRR
30
20
10
tRR
0
-10
-20
-30
-40
10%
Peak
IRR
Peak
IRR
-100
-100
-0.15 -0.05 0.05
0.15
0.25
-5.00
0.00
5.00
10.00
time (µS)
time (µS)
Fig. WF3 - Typ. Diode Recovery Waveform
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
@ TJ = 175°C using Fig. CT.4
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9
IRGP4063DPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
TO-247AC package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 05/06
10
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