IRHG567110SCS [INFINEON]
暂无描述;
| 型号： | IRHG567110SCS |
| 厂家： | 
Infineon |
| 描述： | 暂无描述 晶体 晶体管 功率场效应晶体管 开关 脉冲 CD |
| 文件： | 总14页 (文件大小：182K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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IRHG57110
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036)Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 175
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INFINEON
IRHG58110
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036)Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 175
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IRHG58110PBF
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IRHG593110
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB)Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 175
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INFINEON
IRHG597110
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB)Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 175
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IRHG597110SCS
Small Signal Field-Effect Transistor, 0.96A I(D), 100V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC PACKAGE-14Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 175
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IRHG6110
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGYWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 175
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IRHG6110SCS
Power Field-Effect Transistor, 1A I(D), 100V, 0.7ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036ABWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 175
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IRHG63110
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGYWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 175
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IRHG7110
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB)Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 175
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INFINEON
IRHG7110SCS
Small Signal Field-Effect Transistor, 1A I(D), 100V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB,Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 175
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IRHG7214
RADIATION HARDENED POWER MOSFET THRU-HOLEWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 175
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IRHG7214PBF
Power Field-Effect Transistor, 0.5A I(D), 250V, 2.4ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036ABWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 175
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INFINEON
IRHG8110
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB)Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 175
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IRHG8214
RADIATION HARDENED POWER MOSFET THRU-HOLEWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 175
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IRHG9110
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB)Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 175
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INFINEON
IRHG9110SCS
Small Signal Field-Effect Transistor, 0.75A I(D), 100V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB,Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 175
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INFINEON
IRHG9110SCV
Small Signal Field-Effect Transistor,Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 175
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IRHG93110
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB)Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 175
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INFINEON
IRHI7360SE
TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=0.20ohm, Id=24.3A)Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 175
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INFINEON
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