IRHYB63134CM [INFINEON]
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA); 抗辐射功率MOSFET直通孔(低电阻TO- 257AA )型号: | IRHYB63134CM |
厂家: | Infineon |
描述: | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) |
文件: | 总8页 (文件大小:181K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
相关型号:
IRHYB63230CM
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
7
INFINEON
IRHYB63230CMPBF
Power Field-Effect Transistor, 16A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TABLESS TO-254AA, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
0
INFINEON
IRHYB63230CMSCS
Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a TO-257AA Tabless Low Ohmic package - TO-257AA Tabless Low Ohmic, 300 krad(Si) TID, QIRLWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
0
INFINEON
IRHYB64230CM
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
0
INFINEON
IRHYB67130CM
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
16
INFINEON
IRHYB67134CM
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
9
INFINEON
IRHYB67230CM
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
19
INFINEON
IRHYB67230CMPBF
Power Field-Effect Transistor, 16A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TABLESS TO-254AA, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
0
INFINEON
IRHYB67230CMSCS
Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a TO-257AA Tabless Low Ohmic package - TO-257AA Tabless Low Ohmic, 100 krad(Si) TID, QIRLWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
0
INFINEON
IRHYB67230CMSCV
Power Field-Effect Transistor, 16A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
0
INFINEON
IRHYB68230CM
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
0
INFINEON
IRHYK57133CMSE
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-257AA)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
12
INFINEON
IRHYK57133CMSEPBF
Power Field-Effect Transistor, 20A I(D), 130V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-257AA, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
0
INFINEON
IRHYS593034CM
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
11
INFINEON
IRHYS593034CMPBF
Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED PACKAGE-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
0
INFINEON
IRHYS593Z30CM
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
7
INFINEON
IRHYS597034CM
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
18
INFINEON
IRHYS597034CMPBF
Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED PACKAGE-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
1
INFINEON
IRHYS597Z30CM
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
17
INFINEON
IRHYS597Z30CMPBF
Power Field-Effect Transistor, 20A I(D), 30V, 0.072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED PACKAGE-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
1
INFINEON
©2020 ICPDF网 联系我们和版权申明