BU500 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BU500 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU500
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
APPLICATIONS
·Designed for use in large screen color
deflection circuits.
PINNING(see fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings (Tc=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
UNIT
V
Open emitter
Open base
1500
700
V
Open collector
5
V
6
16
A
ICM
Collector current-peak
Base current
A
IB
4
A
PT
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
75
W
℃
℃
Tj
-65~150
-65~150
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-C
Thermal resistance junction to case
1.66
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU500
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
VCEsat
VBE
PARAMETER
CONDITIONS
MIN
700
5
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=0.5A; IB=0;L=10mH
Emitter-base breakdown voltage
IE=100mA; IC=0
V
Collector-emitter saturation voltage IC=4.5A;IB=2A
1.0
1.3
0.02
1.0
10
V
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
IC=4.5A;VCE=5V
VCE=1000V;VBE=-2V
VCE=1500V;VBE=-2V
VEB=4V; IC=0
V
ICBO
mA
mA
mA
ICEX
IEBO
hFE-1
IC=1A ; VCE=5V
8
36
hFE-2
DC current gain
IC=4.5A ; VCE=5V
3.0
Switching times
ts
tf
Storage time
1.2
1.0
μs
μs
IC=4.5A ;IB1=-IB2=1.5A
V
CC=100V ;
Fall time
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU500
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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