BU505 [STMICROELECTRONICS]
HIGH VOLTAGE NPN MULTIEPITAXIAL FAST-SWITCHING TRANSISTOR; 高电压NPN Multiepitaxial快速开关晶体管
| 型号： | BU505 |
| 厂家： | 
ST |
| 描述： | HIGH VOLTAGE NPN MULTIEPITAXIAL FAST-SWITCHING TRANSISTOR |
| 文件： | 总4页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BU505
HIGH VOLTAGE NPN MULTIEPITAXIAL
FAST-SWITCHING TRANSISTOR
■
■
■
HIGH VOLTAGE CAPABILITY
VERY HIGH SWITCHING SPEED
LOW BASE-DRIVE REQUIREMENTS
APPLICATIONS
■
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
■
SWITCH MODE POWER SUPPLIES
3
2
DESCRIPTION
1
The BU505 is a high voltage NPN fastswitching
transistor designed to be used in lighting
application, like electronic ballas for fluorescent
lamps.
TO-220
Its characteristics make it also ideal for power
supplies.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
IC
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Collector Current
Value
Unit
1500
V
V
700
2.5
A
ICM
Collector Peak Current (tp < 5 ms)
Base Current
4
A
IB
1
A
IBM
Base Peak Current (tp < 5 ms)
2
75
A
o
Ptot
Tstg
Tj
Total Dissipation at Tc ≤ 25 C
W
oC
oC
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
1/4
July 1997
BU505
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.67
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0)
VCE = VCES
VCE = VCES
0.15
1
mA
mA
Tcase = 125oC
IEBO
Emitter Cut-off Current VEB = 5 V
(IC = 0)
1
mA
VCEO(sus) Collector-emitter
Sustaining Voltage
IC = 100 mA
L = 25mH
IB = 0.9 A
IB = 0.9 A
t = 200 µs
700
V
VCE(sat)
VBE(sat)
Is/b
Collector-emitter
Saturation Voltage
IC = 2 A
5
V
Base-emitter
Saturation Voltage
IC = 2 A
1.3
V
Second Breakdown
Current
VCE = 120 V
2
A
ts
Storage Time
VClamp = 250V
IB1 = 0.7 A
Rbb = 0
IC = 2 A
Vbe(off) = -5V
L = 200µH
2
350
µs
ns
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2/4
BU505
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
A
C
0.181
0.051
0.107
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
3/4
BU505
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
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