BU505DF [NXP]
Silicon diffused power transistors; 扩散硅功率晶体管型号: | BU505DF |
厂家: | NXP |
描述: | Silicon diffused power transistors |
文件: | 总12页 (文件大小:85K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BU505F; BU505DF
Silicon diffused power transistors
1997 Aug 13
Product specification
Supersedes data of December 1991
File under Discrete Semiconductors, SC06
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505F; BU505DF
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT186 package with
electrically isolated mounting base.
The BU505DF has an integrated
efficiency diode.
2
2
3
1
1
APPLICATIONS
• Horizontal deflection circuits of
colour television receivers.
MBB008
MBB077
3
a. BU505F.
b. BU505DF.
PINNING
1
2
3
PIN
DESCRIPTION
MBC668
Front view
1
2
base
collector
emitter
3
mb
mounting base; electrically
isolated from all pins
Fig.1 Simplified outline (SOT186) and symbols.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
1500
UNIT
VCESM
VCEO
collector-emitter peak voltage VBE = 0
−
−
−
V
collector-emitter voltage
open base
700
1
V
V
VCEsat
collector-emitter saturation
voltage
IC = 2 A; IB = 900 mA; see Fig.8
VF
diode forward voltage
(BU505DF)
IF = 2 A
−
1.8
V
ICsat
IC
collector saturation current
collector current (DC)
collector current (peak value)
total power dissipation
fall time
−
−
−
−
2
A
see Figs 4 and 5
2.5
4
A
ICM
Ptot
tf
see Figs 4 and 5
A
Th ≤ 25 °C; see Fig.2
inductive load; see Fig.10
20
−
W
µs
0.7
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-h
thermal resistance from junction to external heatsink note 1
note 2
6.35
3.85
55
K/W
K/W
K/W
Rth j-a
thermal resistance from junction to ambient
Notes
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
2. Mounted with heatsink compound and 30 ±5 N force on centre of package.
1997 Aug 13
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505F; BU505DF
ISOLATION CHARACTERISTICS
SYMBOL
PARAMETER
TYP.
MAX.
1500
UNIT
VisolM
Cisol
isolation voltage from all terminals to external heatsink (peak value)
isolation capacitance from collector to external heatsink
−
V
12
−
pF
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCESM
VCEO
ICsat
IC
collector-emitter peak voltage
collector-emitter voltage
collector saturation current
collector current (DC)
VBE = 0
−
−
−
−
−
−
−
−
1500
700
2
V
open base
V
A
see Figs 4 and 5
see Figs 4 and 5
2.5
4
A
ICM
IB
collector current (peak value)
base current (DC)
A
2
A
IBM
Ptot
Tstg
Tj
base current (peak value)
total power dissipation
storage temperature
4
A
Th ≤ 25 °C; see Fig.2
20
W
°C
°C
−65
+150
150
junction temperature
−
MGB875
MGK674
2
10
120
handbook, halfpage
handbook, halfpage
P
tot max
h
(%)
FE
80
(1)
10
(2)
40
1
10
0
0
−2
−1
50
100
150
10
1
10
I
(A)
o
C
T
( C)
h
Tj = 25 °C.
(1) VCE = 5 V.
(2) VCE = 1 V.
Fig.2 Power derating curve.
Fig.3 DC current gain; typical values.
1997 Aug 13
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505F; BU505DF
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCEOsust
collector-emitter sustaining voltage IC = 0.1 A; IB = 0; L = 25 mH; 700
see Figs 6 and 7
−
−
−
−
V
VCEsat
VBEsat
collector-emitter saturation voltage IC = 2 A; IB = 900 mA;
see Fig.8
−
1
V
V
base-emitter saturation voltage
IC = 2 A; IB = 900 mA;
see Fig.9
−
1.3
VF
diode forward voltage (BU505DF) IF = 2 A
−
−
−
−
1.8
V
ICES
collector-emitter cut-off current
VCE = VCESmax; VBE = 0;
0.15
mA
note 1
VCE = VCESmax; VBE = 0;
Tj = 125 °C; note 1
−
−
−
−
1
1
mA
mA
IEBO
hFE
emitter-base cut-off current
DC current gain
VEB = 5 V; IC = 0
see Fig.3
V
CE = 5 V; IC = 2 A
2.22
6
−
−
VCE = 5 V; IC = 100 mA
13
7
30
−
fT
transition frequency
collector capacitance
VCE = 5 V; IC = 100 mA;
f = 1 MHz
−
MHz
pF
Cc
VCB = 10 V; IE = ie = 0;
f = 1 MHz
−
65
−
Switching times in horizontal deflection circuit (see Fig.4)
ts
storage time
ICM = 2 A; IB(end) = 900 mA;
Vdr = −4 V
LB = 10 µH
LB = 15 µH
LB = 25 µH
−
−
−
6.5
7.5
9.5
−
−
−
µs
µs
µs
tf
fall time
ICM = 2 A; IB(end) = 900 mA;
Vdr = −4 V
LB = 10 µH
LB = 15 µH
LB = 25 µH
−
−
−
0.9
−
−
−
µs
µs
µs
0.9
0.85
Note
1. Measured with a half-sinewave voltage (curve tracer).
1997 Aug 13
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505F; BU505DF
MGB931
2
10
I
C
(A)
10
I
CM max
I
C max
II
1
−1
10
I
−2
10
−3
10
−4
10
2
3
4
1
10
10
10
10
V
(V)
CE
Mounted without heatsink compound and 30 ±5 N force on centre of package.
Th = 25 °C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
Fig.4 Forward bias SOAR.
1997 Aug 13
5
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505F; BU505DF
MGB932
2
10
I
C
(A)
10
I
CM max
I
C max
II
1
−1
10
I
−2
10
−3
10
−4
10
2
3
4
1
10
10
10
10
V
(V)
CE
Mounted with heatsink compound and 30 ±5 N force on centre of package.
Th = 25 °C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
Fig.5 Forward bias SOAR.
6
1997 Aug 13
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505F; BU505DF
MGE239
I
handbook, halfpage
andbook, halfpage
C
+ 50 V
(mA)
100 to 200 Ω
250
L
200
100
0
horizontal
oscilloscope
vertical
300 Ω
1 Ω
6 V
V
(V)
CE
min
30 to 60 Hz
V
MGE252
CEOsust
Fig.6 Test circuit for collector-emitter
sustaining voltage.
Fig.7 Oscilloscope display for collector-emitter
sustaining voltage.
MGB889
MGB882
800
1.5
handbook, halfpage
handbook, halfpage
V
CEsat
(mV)
V
BEsat
(V)
600
400
200
0
1
0.5
10
−1
−1
10
1
10
1
10
I
(A)
I
(A)
C
C
IC/IB = 2; Tj = 25 °C.
IC/IB = 2; Tj = 25 °C.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.9 Base-emitter saturation voltage as a
function of collector current; typical values.
1997 Aug 13
7
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505F; BU505DF
MBH382
handbook, halfpage
I
Csat
i
90%
C
10%
time
t
f
t
s
i
B
I
B (end)
time
Fig.10 Switching time waveforms.
1997 Aug 13
8
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505F; BU505DF
PACKAGE OUTLINE
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3 lead TO-220 exposed tabs
SOT186
E
E
1
A
P
m
A
1
q
D
1
D
L
1
Q
b
1
L
L
2
1
2
3
b
c
w
M
e
e
1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
A
A
b
c
D
D
1
E
E
e
e
L
L
1
m
P
Q
q
w
b
UNIT
mm
L
2
1
1
1
1
1.5
1.3
14.3
13.5
4.8
4.0
1.4
1.2
4.4
4.0
2.9
2.5
0.9
0.7
4.4
4.0
0.55 17.0
0.38 16.4
7.9 10.2
7.5 9.6
5.7
5.3
0.9
0.5
3.2
3.0
5.08
2.54
10
0.4
Note
1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
97-06-11
SOT186
TO-220
1997 Aug 13
9
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505F; BU505DF
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Aug 13
10
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505F; BU505DF
NOTES
1997 Aug 13
11
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© Philips Electronics N.V. 1997
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Printed in The Netherlands
137067/00/01/pp12
Date of release: 1997 Aug 13
Document order number: 9397 750 02709
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