BU505 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BU505 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU505
DESCRIPTION
·With TO-220C package
·High voltage,high speed-switching
APPLICATIONS
·For horizontal deflection circuits
of color TV receivers
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
CONDITIONS
Open emitter
VALUE
UNIT
V
1500
Collector-emitter voltage
Emitter-base voltage
Collector current
Open base
700
V
Open collector
5
V
2.5
A
ICM
Collector current (peak)
Base current
4
A
IB
1
2
A
IBM
Base current(peak)
A
Ptot
Total power dissipation
Max.operating junction temperature
Storage temperature
TC=25℃
75
W
℃
℃
Tj
150
-65~150
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance junction case
MAX
UNIT
1.67
℃/W
Rth j-case
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU505
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBEsat
hFE
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
Collector-emitter sustaining voltage IC=0.1 A ;IB=0;L=25mH
Collector-emitter saturation voltage IC=2A ;IB=0.9 A
700
V
V
V
5.0
1.3
30
Base-emitter saturation voltage
DC current gain
IC=2A ;IB=0.9 A
IC=0.1A ;VCE=5V
6
VCE =1500V;VBE=0;
TC=125℃
0.15
1.0
ICES
Collector cut-off current
Emitter cut-off current
Transition frequency
mA
mA
MHz
A
IEBO
VEB=5V; IC=0
1.0
fT
IC=0.1A ;VCE=5V
7
Is/b
Second breakdown current
V
CE=120V;t=200μs
2
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU505
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: 0.1mm)
3
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