BU505D [NXP]
Silicon diffused power transistors; 扩散硅功率晶体管
| 型号： | BU505D |
| 厂家： | 
NXP |
| 描述： | Silicon diffused power transistors |
| 文件： | 总12页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BU505; BU505D
Silicon diffused power transistors
1997 Aug 13
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505; BU505D
DESCRIPTION
High-voltage, high-speed switching
NPN power transistor in a TO-220AB
package. The BU505D has an
integrated efficiency diode.
2
2
3
APPLICATIONS
1
1
• Horizontal deflection circuits of
colour television receivers.
MBB008
MBB077
3
MBK106
PINNING
1
2 3
a. BU505.
b. BU505D.
PIN
1
DESCRIPTION
base
2
collector; connected to
mounting base
Fig.1 Simplified outline (TO-220AB) and symbols.
3
emitter
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
1500
UNIT
VCESM
VCEO
collector-emitter peak voltage
collector-emitter voltage
VBE = 0
−
−
−
V
V
V
open base
700
1
VCEsat
collector-emitter saturation
voltage
IC = 2 A; IB = 900 mA
VF
diode forward voltage
(BU505D)
IF = 2 A
−
1.8
V
ICsat
IC
collector saturation current
collector current (DC)
collector current (peak value)
total power dissipation
fall time
−
−
−
−
2
A
A
A
see Fig.3
see Fig.3
2.5
4
ICM
Ptot
tf
Tmb ≤ 25 °C; see Fig.4
75
−
W
inductive load; see Fig.7
0.9
µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-mb
thermal resistance from junction to mounting base
1.67
K/W
1997 Aug 13
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505; BU505D
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-emitter peak voltage
collector-emitter voltage
collector saturation current
collector current (DC)
CONDITIONS
MIN.
MAX.
1500
700
2
UNIT
VCESM
VCEO
ICsat
IC
VBE = 0
−
−
−
−
−
−
−
−
V
V
A
A
A
A
A
open base
see Fig.3
see Fig.3
2.5
4
ICM
IB
collector current (peak value)
base current (DC)
2
IBM
Ptot
Tstg
Tj
base current (peak value)
total power dissipation
storage temperature
4
T
mb ≤ 25 °C; see Fig.4
75
W
−65
+150
150
°C
°C
junction temperature
−
MGB859
10
Z
th j−mb
(K/W)
δ = 1
0.75
0.50
1
0.33
0.20
0.10
0.05
−1
10
0.02
0.01
0
−2
10
−2
−1
2
10
10
1
10
10
t
(ms)
p
Fig.2 Transient thermal impedance.
1997 Aug 13
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505; BU505D
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
700
TYP.
MAX.
UNIT
VCEOsust
VCEsat
VBEsat
VEBO
VF
collector-emitter sustaining voltage see Figs 5 and 6
collector-emitter saturation voltage IC = 2 A; IB = 900 mA
−
−
−
6
−
−
−
V
−
−
−
−
−
1
V
base-emitter saturation voltage
emitter-base voltage
IC = 2 A; IB = 900 mA
IE = 10 mA; IC = 0
IF = 2 A
1.3
−
V
V
diode forward voltage (BU505D)
collector-emitter cut-off current
1.8
0.15
V
ICES
VCE = VCESmax; VBE = 0;
note 1
mA
VCE = VCESmax; VBE = 0;
Tj = 125 °C; note 1
−
−
−
1
mA
mA
IEBO
hFE
fT
emitter-base cut-off current
DC current gain
VEB = 5 V; IC = 0
−
6
−
1
VCE = 5 V; IC = 100 mA
13
7
30
−
transition frequency
VCE = 5 V; IC = 100 mA;
f = 5 MHz
MHz
pF
Cc
collector capacitance
VCB = 10 V; IE = ie = 0;
f = 1 MHz
−
65
−
Switching times in horizontal deflection circuit (see Fig.7)
ts storage time ICM = 2 A; IB(end) = 900 mA;
V
dr = −4 V
LB = 10 µH
LB = 15 µH
LB = 25 µH
−
−
−
6.5
7.5
9.5
−
−
−
µs
µs
µs
tf
fall time
ICM = 2 A; IB(end) = 900 mA;
Vdr = −4 V
LB = 10 µH
LB = 15 µH
LB = 25 µH
−
−
−
0.9
−
−
−
µs
µs
µs
0.9
0.85
Note
1. Measured with a half-sinewave voltage (curve tracer).
1997 Aug 13
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505; BU505D
MGB942
2
10
I
C
(A)
10
δ = 0.01
I
CM max
I
C max
t
=
p
10 µs
II
(1)
20 µs
1
−1
−2
50 µs
100 µs
200 µs
I
500 µs
(2)
10
2 ms
10 ms
DC
10
2
3
4
10
10
10
10
V
(V)
CE
Tmb = 25 °C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
(1) Ptot max and Ptot peak max lines.
(2) Second breakdown limits.
Fig.3 Forward bias SOAR.
5
1997 Aug 13
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505; BU505D
MGD283
120
handbook, halfpage
P
handbook, halfpage
tot max
+ 50 V
(%)
100 to 200 Ω
L
80
horizontal
oscilloscope
vertical
40
300 Ω
1 Ω
6 V
30 to 60 Hz
MGE252
0
0
50
100
150
o
T
( C)
mb
Fig.5 Test circuit for collector-emitter
sustaining voltage.
Fig.4 Power derating curve.
MBH382
handbook, halfpage
I
Csat
i
90%
C
MGE239
I
handbook, halfpage
C
(mA)
250
10%
time
200
100
0
t
f
t
s
i
B
I
B (end)
time
V
(V)
CE
min
V
CEOsust
Fig.6 Oscilloscope display for collector-emitter
sustaining voltage.
Fig.7 Switching time waveforms.
1997 Aug 13
6
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505; BU505D
PACKAGE OUTLINE
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
P
A
A
1
q
D
1
D
(1)
L
L
1
2
Q
b
1
L
1
2
3
b
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
b
(1)
L
e
2
A
b
D
E
L
D
L
1
A
c
UNIT
P
q
Q
1
1
1
max.
4.5
4.1
1.39
1.27
0.9
0.7
1.3
1.0
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
15.0
13.5
3.30
2.79
3.8
3.6
3.0
2.7
2.6
2.2
mm
3.0
2.54
Note
1. Terminals in this zone are not tinned.
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-06-11
SOT78
TO-220AB
1997 Aug 13
7
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505; BU505D
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Aug 13
8
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505; BU505D
NOTES
1997 Aug 13
9
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505; BU505D
NOTES
1997 Aug 13
10
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505; BU505D
NOTES
1997 Aug 13
11
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© Philips Electronics N.V. 1997
SCA55
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137067/00/01/pp12
Date of release: 1997 Aug 13
Document order number: 9397 750 02708
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