KSC5337 [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | KSC5337 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
KSC5337
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 400V(Min)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
V
700
400
V
9
V
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
8
15
A
ICM
A
IB
2
A
IBM
4
A
Collector Power Dissipation
@ TC=25℃
PC
100
150
-65~150
W
℃
℃
TJ
Junction Temperature
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
KSC5337
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CBO
V(BR)CEO
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
IC= 1mA; IE= 0
MIN
7000
400
TYP. MAX UNIT
V
V
IC= 5mA; IB= 0
IC= 1.3A; IB= 0.13A
IC= 3A; IB= 0.6A
0.5
0.7
1.1
1.25
100
10
V
V
VCE
(sat)-1
VCE
VBE
VBE
(sat)-2
(sat)-1
(sat)-2
IC= 1.3A; IB= 0.13A
IC= 3A; IB= 0.6A
V
V
ICBO
VCB= 700V; RBE= 0; IB= 0
VEB= 9V; IC=0
μA
μA
IEBO
hFE-1
hFE-2
COB
fT
Emitter Cutoff Current
DC Current Gain
IC= 0.5A; VCE= 5V
IC= 3A; VCE= 1V
15
6
40
DC Current Gain
Output Capacitance
70
14
pF
IE= 0; VCB= 10V; ftest= 0.1MHz
IC= 0.1A ;VCE= 6V
Current-Gain—Bandwidth Product
MHz
Switching Times
Turn-On Time
0.2
2.0
0.5
μs
μs
μs
ton
ts
IC= 1A; IB1= -IB2=0.2A;
VCC= 125V
Storage Time
Fall Time
tf
2
isc Website：www.iscsemi.cn
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