MJF18004 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | MJF18004 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
MJF18004
DESCRIPTION
·
·With TO-220F package
·High voltage ,high speed
APPLICATIONS
·Designed for use in 220V line-operated
switchmode power supplies and electronic
light ballasts
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
3
Absolute maximum ratings(Tc=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
CONDITIONS
Open emitter
VALUE
UNIT
V
1000
Open base
450
V
Open collector
9
V
5
A
ICM
10
A
IB
2
4
A
IBM
Base current-Peak
A
PD
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
40
W
℃
℃
Tj
150
Tstg
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance junction to case
Thermal resistance junction to ambient
MAX
3.12
62.5
UNIT
℃/W
℃/W
Rth j-C
Rth j-A
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
MJF18004
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat-1
VCEsat-2
VCEsat-3
VBEsat-1
VBEsat-2
VBEsat-3
PARAMETER
CONDITIONS
IC=0.1A; L=25mH
MIN
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
450
IC=1A ;IB=0.1A
TC=125℃
0.5
0.6
V
IC=2A ;IB=0.4A
TC=125℃
0.45
0.8
V
IC=2.5A ;IB=0.5A
IC=1A ;IB=0.1A
IC=2A ;IB=0.4A
IC=2.5A ;IB=0.5A
0.75
1.1
1.25
1.3
0.1
0.5
0.1
0.1
0.1
V
V
V
V
VCES=RatedVCES;
VEB=0
ICES
Collector cut-off current
mA
TC=125℃
VCES=800V
ICEO
IEBO
hFE-1
hFE-2
hFE-3
hFE-4
fT
Collector cut-off current
Emitter cut-off current
DC current gain
VCE=RatedVCEO; IB=0
VEB=9V; IC=0
mA
mA
IC=1A ; VCE=2.5V
12
14
6
DC current gain
IC=1A ; VCE=5V
36
DC current gain
IC=2A ; VCE=1V
DC current gain
IC=5mA ; VCE=5V
10
Transition frequency
Collector outoput capacitance
IC=0.5A ; VCE=10V;f=1.0MHz
IE=0 ; VCB=10V;f=1.0MHz
13
45
MHz
pF
COB
Switching times resistive load,Duty Cycle≤10%,Pulse Width=20μs
ton
ts
Turn-on time
Storage time
Fall time
0.6
3.0
0.4
μs
μs
μs
VCC=250V ,IC=2.5A
IB1=0.5A; IB2=0.5A
tf
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
MJF18004
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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