FII24-170AH1 [IXYS]
Insulated Gate Bipolar Transistor, 18A I(C), 1700V V(BR)CES, N-Channel, ISOPLUS, I4PAC-3;
| 型号： | FII24-170AH1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 18A I(C), 1700V V(BR)CES, N-Channel, ISOPLUS, I4PAC-3 栅 功率控制 晶体管 |
| 文件： | 总2页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Data
FII 24-170AH1
IC25 = 18 A
FII 24-170AH1
High Voltage IGBT
Phase-Leg
VCES = 1700 V
VCE(sat) = 6.0 V
ISOPLUS i4-PACTM Package
3
5
4
1
2
1
5
IGBT
Features
Symbol
VCES
Conditions
Maximum Ratings
z
NPT3 IGBT
TVJ = 25∞C to 150∞C
1700
V
- low saturation voltage
- positive temperature coefficient for
easy paralleling
VGES
VGEM
Continuous
Transient
20
30
V
V
- fast switching
- short tail current for optimized
performance in resonant circuits
SONIC-FRDTM diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
ISOPLUS i4-PACTM package
- isolated back surface
- low coupling capacity between pins
and heatsink
IC25
IC90
ICM
TC = 25∞C
TC = 90∞C
18
11
75
A
A
A
z
z
+
RBSOA
VGE = 15 V; RG = 5 Ω; TVJ = 125∞C
50
A
Clamped inductive load; Vclamp = 1360V
PC
TC = 25∞C
140
W
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered, E 72873
Symbol
VCE(sat)
Conditions
Characteristic Values
(TVJ = 25°C unless otherwise specified)
min.
typ. max.
IC = 30 A; VGE = 15 V
4.5
4.8
6.0
5.0
V
V
TVJ = 125∞C
VGE(th)
ICES
IC = 1 mA; VGE = VCE
VCE = VCES;VGE = 0 V
3.0
V
Applications
100 µA
1.5 mA
z
Single phaseleg
- buck-boost chopper
H-bridge
- power supplies
- induction heating
- four quadrant DC drives
- controlled rectifier
Three phase bridge
- AC drives
TVJ = 125∞C
z
IGES
VCE = 0 V; VGE
Inductive load
=
20 V
100 nA
td(on)
tr
td(off)
tf
50
60
ns
ns
VCE = 600 V; IC = 30 A
±
200
55
ns
ns
VGE = 15 V; RG = 39 Ω
z
Eoff
1.1
mJ
- controlled rectifier
td(on)
tr
td(off)
tf
Eon
Eoff
50
65
220
55
4.5
1.7
ns
ns
ns
ns
mJ
mJ
Inductive load, TVJ = 125∞C
VCE = 600 V; IC = 30 A
±
VGE = 15 V; RG = 39 Ω
Note: All characteristic values and ratings refer to a single IGBT or diode
except VCES, ICES and Coes.
DS99231 (12/04)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
FII 24-170AH1
IGBTs
Outline Drawing
Symbol
Conditions
Characteristic Values
min.
typ. max.
gfs
IC = IC25, VCE = 10 V, Note 2
10
16
S
Qg
105
17
nC
nC
nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
30
Cies
Coes
Cres
2400
150
30
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
RthJC
RthCK
0.9 K/W
K/W
0.6
Diodes
Symbol
Conditions
Maximum Ratings
IF25
IF90
TC = 25∞C
TC = 90∞C
24
14
A
A
Symbol
VF
Conditions
Characteristic Values
min. typ. max.
IF = 20 A
2.5
2.5
2.95
V
V
TVJ = 125∞C
IF = 20 A; diF/dt = -450 A/µs; TVJ = 125∞C
VR = 1200 V; VGE = 0 V
IRM
trr
23
A
230
ns
RthJC
RthCS
1.6
0.6
K/W
K/W
Component
Symbol
Conditions
Maximum Ratings
TVJ
Tstg
-55...+150
-55...+125
°C
°C
VISOL
FC
IISOL ≤ 1 mA; 50/60 Hz
2500
V~
N
mounting force with clip
20...120
Symbol
Cp
Conditions
Characteristic Values
min.
typ. max.
coupling capacity between shorted
pins and mounting tab in the case
40
pF
dS,dA
dS,dA
pin - pin
pin - backside metal
1.7
5.5
mm
mm
Weight
9
g
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
相关型号：
FII24N170AH1
Insulated Gate Bipolar Transistor, 18A I(C), 1700V V(BR)CES, N-Channel, ISOPLUS, I4PAC-5
IXYS
FII24N17AH1
Insulated Gate Bipolar Transistor, 18A I(C), 1700V V(BR)CES, N-Channel, ISOPLUS, I4PAC-5
IXYS
FII24N17AH1
Insulated Gate Bipolar Transistor, 18A I(C), 1700V V(BR)CES, N-Channel, ISOPLUS, I4PAC-5
LITTELFUSE
FII30-09G
Insulated Gate Bipolar Transistor, 42A I(C), 900V V(BR)CES, N-Channel, ISOPLUS, I4PAC-5
LITTELFUSE
©2020 ICPDF网 联系我们和版权申明