FII30-06D [IXYS]
low saturation voltage; 低饱和电压
| 型号： | FII30-06D |
| 厂家： | 
IXYS CORPORATION |
| 描述： | low saturation voltage |
| 文件： | 总5页 (文件大小：395K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FII 30-06D
IC25
VCES
= 30 A
= 600 V
IGBT phaseleg
in ISOPLUS i4-PAC™
VCE(sat) typ. = 1.9 V
3
5
4
1
2
E72873
Features
IGBT
• NPT IGBT technology
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
• HiPerFRED™ diode
- optimized fast and soft reverse
recovery
- low operating forward voltage
- low leakage current
• ISOPLUS i4-PAC™ package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
Symbol
VCES
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
600
20
V
VGES
V
IC25
IC90
TC = 25°C
TC = 90°C
30
18
A
A
±
ICM
VCEK
VGE = 15 V; RG = 47 Ω; TVJ = 125°C
40
VCES
A
µs
W
RBSOA Clamped inductive load; L = 100 µH
±
tSC
VCE = VCES; VGE = 15 V; RG = 47 Ω
10
(SCSOA) TVJ = 125°C; non-repetitive
Ptot
TC = 25°C
100
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat)
IC = 20 A; VGE = 15 V
TVJ = 25°C
TVJ = 125°C
1.9
2.2
2.4
V
V
- industry standard outline
- UL registered E 72873
VGE(th)
ICES
IC = 0.5 mA; VGE = VCE
VCE = VCES; VGE = 0 V
4.5
6.5
0.6
V
Applications
TVJ = 25°C
TVJ = 125°C
mA
mA
• single phaseleg
- buck-boost chopper
• H bridge
0.6
IGES
VCE = 0 V; VGE
=
20 V
200
nA
td(on)
tr
td(off)
tf
Eon
Eoff
50
55
200
30
0.75
0.6
ns
ns
ns
ns
mJ
mJ
- power supplies
- induction heating
- four quadrant DC drives
- controlled rectifier
• three phase bridge
- AC drives
Inductive load
TVJ = 125°C
VCE = 300 V; IC = 20 A
VGE = 15 V; RG = 47 Ω
- controlled rectifier
Cies
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 300 V; VGE = 15 V; IC = 20 A
1.1
65
nF
nC
QGon
RthJC
RthJH
1.25 K/W
K/W
with heatsink compound
2.5
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110119a
1 - 5
FII 30-06D
Diode
Symbol
VRRM
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
600
V
IF25
IF90
TC = 25°C
TC = 90°C
30
15
A
A
Symbol
VF
Conditions
Characteristic Values
min. typ. max.
IF = 20 A
TVJ = 25°C
VJ = 125°C
2.3
1.6
2.7
V
V
T
IRM
trr
IF = 15 A; diF/dt = -400 A/µs;
7
50
A
ns
VR = 300 V; VGE = 0 V;
TVJ = 125°C
RthJC
RthJH
(per diode)
with heatsink compound
2.3 K/W
K/W
4.6
Component
Symbol
Conditions
Maximum Ratings
TVJ
Tstg
operating
-55...+150
-55...+125
°C
°C
VISOL
FC
IISOL < 1 mA; 50/60 Hz; t = 1 s
Mounting force with clip
2500
V~
20...120
Nm
Symbol
CP
Conditions
Characteristic Values
min. typ. max.
coupling capacity between shorted
pins and mounting tab in the case
40
pF
dS, dA
dS, dA
pin - pin
pin - backside metal
1.7
5.5
mm
mm
Weight
6
g
MILLIMETER
INCHES
DIM.
MIN
4.83
2.59
1.17
1.14
1.47
2.54
0.51
20.80
14.99
1.65
19.56
16.76
MAX
5.21
MIN
MAX
0.205
0.118
0.085
0.055
0.068
0.110
0.029
0.840
0.620
0.080
0.799
0.690
A
0.190
0.102
0.046
0.045
0.058
0.100
0.020
0.819
0.590
0.065
0.770
0.660
A1
A2
b
3.00
A
2.16
A2
E
E1
1.40
b2
b4
C
1.73
2.79
0.74
D
21.34
15.75
2.03
D1
D2
E
20.29
17.53
E1
e
3.81 BSC
0.15 BSC
L
19.81
2.11
5.33
2.54
―
21.34
2.59
6.20
4.57
0.10
0.780
0.083
0.210
0.100
―
0.840
0.102
0.244
0.180
0.004
L1
Q
4x e
R
C
b2
1 2 3 4 5
W
A1
Die konvexe Form des Substrates ist typ. < 0.05 mm über
der Kunststoffoberfläche der Bauteilunterseite
The convex bow of substrate is typ. < 0.05 mm over plastic
surface level ofdevice bottom side
b
b4
W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110119a
2 - 5
FII 30-06D
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110119a
3 - 5
FII 30-06D
10
1
D = 0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
IGBT
ZthJH[K/W]
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t (s)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110119a
4 - 5
FII 30-06D
Diode
40
2000
nC
40
TVJ= 100°C
VR = 300V
TVJ= 100°C
VR = 300V
A
A
30
1500
1000
500
0
30
IF
IRM
Qr
TVJ=150°C
TVJ=100°C
TVJ= 25°C
IF= 30A
IF= 15A
IF= 7.5A
20
10
0
20
10
0
IF= 30A
IF= 15A
IF= 7.5A
A/µs
0
1
2
V
100
1000
0
200 400 600 1000
A/µs
-diF/dt
VF
-diF/dt
Forward current IF versus VF
Reverse recovery charge Qr
versus -diF/dt
Peak reverse current IRM
versus -diF/dt
2.0
1.5
1.0
0.5
0.0
120
ns
20
V
VFR
15
1.6
TVJ= 100°C
VR = 300V
TVJ= 100°C
IF = 15A
VFR
µs
tfr
110
trr
1.2
Kf
IF= 30A
IF= 15A
IF= 7.5A
100
90
tfr
10
5
0.8
0.4
0
IRM
Qr
80
15-06A
70
0
A/µs
0
40
80
120
160
0
200 400 600 1000
0
200 400 600 1000
°C
A/µs
diF/dt
TVJ
-diF/dt
Dynamic parameters Qr, IRM
versus TVJ
Recovery time trr versus -diF/dt
Peak forward voltage VFR and tfr
versus diF/dt
10
(ZthJH is measured using 50
µm thermal grease)
1
FRED
ZthJH [K/W]
D = 0
0.1
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t(s)
Transient thermal resistance junction to heatsink
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110119a
5 - 5
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