FII24N17AH1 [LITTELFUSE]
Insulated Gate Bipolar Transistor, 18A I(C), 1700V V(BR)CES, N-Channel, ISOPLUS, I4PAC-5;
| 型号： | FII24N17AH1 |
| 厂家： | 
LITTELFUSE |
| 描述： | Insulated Gate Bipolar Transistor, 18A I(C), 1700V V(BR)CES, N-Channel, ISOPLUS, I4PAC-5 栅 功率控制 晶体管 |
| 文件： | 总2页 (文件大小：711K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Data
FII24N17AH1
= 18 A
FII24N17AH1
IC25
High Voltage IGBT
Phase-Leg
VCES = 1700 V
VCE(sat) = 6.0 V
ISOPLUS i4-PACTM Package
3
5
4
1
2
1
5
IGBT
Features
Symbol
VCES
Conditions
Maximum Ratings
z
NPT3 IGBT
TVJ = 25°C to 150°C
1700
V
- low saturation voltage
- positive temperature coefficient for
easy paralleling
VGES
VGEM
Continuous
Transient
20
30
V
V
- fast switching
- short tail current for optimized
performance in resonant circuits
SONIC-FRDTM diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
ISOPLUS i4-PACTM package
- isolated back surface
- low coupling capacity between pins
and heatsink
IC25
IC90
ICM
TC = 25°C
TC = 90°C
18
11
75
A
A
A
z
z
+
RBSOA
VGE = 15 V; RG = 5 Ω; TVJ = 125°C
50
A
Clamped inductive load; Vclamp = 1360V
PC
TC = 25°C
140
W
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered, E 72873
Symbol
VCE(sat)
Conditions
Characteristic Values
(TVJ = 25°C unless otherwise specified)
min.
typ. max.
IC = 16 A; VGE = 15 V
4.5
4.8
6.0
5.0
V
V
TVJ = 125°C
VGE(th)
ICES
IC = 250 μA; VGE = VCE
3.0
V
Applications
VCE = 0.8 VCES;VGE = 0 V
TVJ = 125°C
100 μA
1.5 mA
z
Single phaseleg
- buck-boost chopper
H-bridge
z
IGES
VCE = 0 V; VGE
=
20 V
100 nA
- power supplies
td(on)
tr
td(off)
tf
48
60
200
45
ns
ns
ns
ns
mJ
- induction heating
- four quadrant DC drives
- controlled rectifier
Three phase bridge
- AC drives
Inductive load
VCE = 600 V; IC = 24 A
±
VGE = 15 V; RG = 39 Ω
z
Eoff
1.1
- controlled rectifier
td(on)
tr
td(off)
tf
Eon
Eoff
40
60
220
55
2.5
1.7
ns
ns
ns
ns
mJ
mJ
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 24 A
±
VGE = 15 V; RG = 39 Ω
Note: All characteristic values and ratings refer to a single IGBT or diode
except VCES, ICES and Coes.
IXYS reserves the right to change limits, test conditions and dimensions.
DS99231A (08/05)
© 2005 IXYS All rights reserved
FII24N17AH1
IGBT
Outline Drawing
Symbol
Conditions
Characteristic Values
min.
typ. max.
gfs
IC = 24 A, VCE = 10 V, Note 2
10
16
S
Qg
105
17
nC
nC
nC
Qge
Qgc
IC = 16 A, VGE = 15 V, VCE = 0.5 VCES
VCE = 25 V, VGE = 0 V, f = 1 MHz
30
Cies
Coes
Cres
2400
150
30
pF
pF
pF
RthJC
RthCK
0.9 K/W
K/W
0.6
Diode
Symbol
Conditions
Maximum Ratings
IF25
IF90
TC = 25°C
TC = 90°C
24
14
A
A
Symbol
VF
Conditions
Characteristic Values
min. typ. max.
IF = 20 A
2.5
2.5
3.1
V
V
TVJ = 125°C
IF = 20 A; diF/dt = -450 A/μs; TVJ = 125°C
VR = 1200 V; VGE = 0 V
IRM
trr
23
A
230
ns
RthJC
RthCS
1.6
K/W
K/W
0.6
Component
Symbol
Conditions
Maximum Ratings
TVJ
Tstg
-55...+150
-55...+125
°C
°C
VISOL
FC
IISOL ≤ 1 mA; 50/60 Hz
2500
V~
N
mounting force with clip
20...120
Symbol
Cp
Conditions
Characteristic Values
min.
typ. max.
coupling capacity between shorted
pins and mounting tab in the case
40
pF
dS,dA
dS,dA
pin - pin
pin - backside metal
1.7
5.5
mm
mm
Weight
9
g
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
6,534,343
6,583,505
6,710,405B2 6,759,692
6,710,463
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
相关型号：
FII30-09G
Insulated Gate Bipolar Transistor, 42A I(C), 900V V(BR)CES, N-Channel, ISOPLUS, I4PAC-5
LITTELFUSE
FII40-06D
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, ISOPLUS, I4PAC-5
LITTELFUSE
FII40-06D
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, ISOPLUS, I4PAC-5
IXYS
©2020 ICPDF网 联系我们和版权申明