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FII24N170AH1 [IXYS]

Insulated Gate Bipolar Transistor, 18A I(C), 1700V V(BR)CES, N-Channel, ISOPLUS, I4PAC-5;
FII24N170AH1
型号： FII24N170AH1
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Insulated Gate Bipolar Transistor, 18A I(C), 1700V V(BR)CES, N-Channel, ISOPLUS, I4PAC-5

栅 功率控制 晶体管
文件： 总2页 (文件大小：600K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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Preliminary Technical Information  
VCES = 1700V  
IC25 = 18A  
VCE(sat)  6V  
tfi(typ) = 45ns  
High Voltage IGBT  
Phase-Leg  
FII24N170AH1  
3
5
4
(Electrically Isolated Tab)  
1
2
ISOPLUS i4ACTM  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
1700  
V
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
IC25  
IC90  
IF25  
IF90  
ICM  
TC = 25°C  
TC = 90°C  
TC = 25°C  
TC = 90°C  
TC = 25°C  
18  
11  
24  
14  
75  
A
A
A
A
Features  
NPT3 IGBT  
SSOA  
(RBSOA)  
VGE = 15V, TVJ = 125°C, RG = 5  
Clamped Inductive Load  
ICM 50  
V136
A
V
- Low Saturation Voltage  
- Positive Temperature Coefficient for  
Easy Paralleling  
PC  
TC = 25°C  
140  
W
- Fast Switching  
- Short Tail Current for Optimized  
Performance in Resonant Circuits  
SONIC-FRDTM Diode  
- Fast Reverse Recovery  
- Low Operating Forward Voltage  
- Low Leakage Current  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
Min.  
Typ.  
Max.  
ISOPLUS i4-PACTM Package  
VGE(th)  
ICES  
IC = 250μA, VCE = V
.0  
5.0  
V
- Isolated Back Surface  
- Low Coupling Capacity Between Pins  
and Heatsink  
VCE = 0.8 • VCE,
100 μA  
1.5 mA  
2, TJ = 125°C  
- Enlarged Creepage Towards Heatsink  
- Application Friendly Pinout  
- low inductive current path  
- High Reliability  
IGES  
VCE = 0V, VGE =
±100 nA  
VCE(sat)  
IC = V= 15
4.5  
4.8  
6.0  
V
V
TJ = 125°C  
- Industry Standard Outline  
- UL registered, E 72873  
td(on)  
tri  
td(off)  
tfi  
48  
60  
ns  
ns  
ns  
ns  
mJ  
I= 25°C  
IC
200  
45  
Applications  
VCE = 39  
Single PhaseLeg  
- Buck-Boost Chopper  
H-bridge  
- Power Supplies  
- Induction Heating  
- Four Quadrant DC Drives  
- Controlled Rectifier  
Three Phase Bridge  
- AC Drives  
Note 2  
Eof  
1.1  
f
td(on)  
tri  
Eon  
td(off)  
tfi  
40  
ns  
Inductive load, TJ = 125°C  
IC = 24A, VGE = 15V  
60  
2.5  
ns  
mJ  
VCE = 600V, RG = 39  
220  
55  
ns  
ns  
Note 2  
Eoff  
1.7  
mJ  
- Controlled Rectifier  
© 2013 IXYS CORPORATION, All Rights Reserved  
DS99231B(6/13)  
FII24N170AH1  
ISOPLUS i4-PACTM OutLine  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
Min.  
Typ.  
Max.  
gfs  
IC = 24A, VCE = 10V, Note 1  
10  
16  
S
Cies  
Coes  
Cres  
2400  
150  
30  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
Qg(on)  
Qge  
Qgc  
105  
17  
nC  
nC  
nC  
IC = 16A, VGE = 15V, VCE = 0.5 • VCES  
30  
RthJC  
RthCS  
0.90 °C/W  
°C/W  
0.6  
Reverse Sonic Diode (FRD)  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max
VF  
IF = 20A, VGE = 0V, Note 1  
2.50  
2.50  
.95  
V
V
TJ = 125°C  
TJ = 125°C  
IRM  
trr  
23  
230  
A
s  
IF = 20A, VGE = 0V,  
-diF/dt = - 450A/μs, VR = 1200V  
RthJC  
RthCS  
.6  
0.6  
°C/W  
°CW  
Component  
Symbol  
Test Conditions  
m Ratings  
TJ  
150  
- 55 ... +150  
°C  
°C  
Tstg  
FC  
Mounting Force  
0..120 / 4.5..27  
2500  
N/lb.  
V~  
VISOL  
50/60Hz, 1 Second  
Symbol Test Conditions  
Characteristic Values  
Min.  
Typ.  
Max.  
Cp  
Couppacity Borted  
40  
pF  
Ping Tab e Case  
dS,dA  
dS,dA  
Pal  
1.7  
5.5  
mm  
mm  
Weight  
6
g
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
PRELIMANARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  

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