FII30-09G [LITTELFUSE]
Insulated Gate Bipolar Transistor, 42A I(C), 900V V(BR)CES, N-Channel, ISOPLUS, I4PAC-5;
| 型号： | FII30-09G |
| 厂家： | 
LITTELFUSE |
| 描述： | Insulated Gate Bipolar Transistor, 42A I(C), 900V V(BR)CES, N-Channel, ISOPLUS, I4PAC-5 栅 |
| 文件： | 总6页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Infomation
FII 30-09G
HiPerFASTTM IGBT
IC25
VCES
= 42 A
= 900 V
VCE(sat)typ. = 2.7 V
B2-Class High Speed
IGBTs copak with FREDs
tfityp
= 165 ns
3
PhaselegTopology
5
4
in ISOPLUS i4-PACTM
1
1
2
5
Features
IGBTs
ꢀ
B2-Class IGBT
High frequency IGBT
High current handling capability
MOS Gate tutrn ON-drive simplicity
HiPerFREDTM diode
Symbol
VCES
Conditions
Maximum Ratings
ꢀ
ꢀ
ꢀ
ꢀ
TVJ = 25°C to 150°C
900
V
VGES
VGEM
IC25
Continuous
Transient
TC = 25°C
TC = 110°C
20
30
42
21
V
V
A
A
- fast reverse recovery
-low operating forward voltage
-low leakage current
IC110
ISOPLUS i4-PACTM package
-isolated back surface
ꢀ
SSOA
VGE = 15 V; RG = 10 Ω; TVJ = 125°C
ICM= 64
A
-low coupling capacity between pins
and heatsink
-enlarged creepage towards heatsink
-application friendly pinout
-low inductive current path
-high reliability
(RBSOA)
clamped inductive load@VCES≤ 600 V
Ptot per IGBT TC = 25°C
156
W
-industry standard outline
- UL registered, E 72873
Symbol
VCE(sat)
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
Applications
IC = IC110; VGE = 15 V; TVJ = 25°C
2.2
2.8
2.7
5.0
V
V
ꢀ
Single phaseleg
buck-boost chopper
H bridge
-power supplies
-induction heating
-four quadrant DC drives
-controlled rectifier
Three phase bridge
AC drives
TVJ = 125°C
ꢀ
ꢀ
VGE(th)
ICES
IC = 250 µA; VGE = VCE
3.0
V
VCE = VCES;VGE = 0 V; TVJ = 25°C
TVJ = 125°C
50 µA
750 µA
±
IGES
VCE = 0 V; VGE
=
20 V
100 nA
ꢀ
ꢀ
td(on)
tr
td(off)
tf
Eon
Eoff
20
22
ns
ns
ꢀ
controlled rectifier
Inductive load, TVJ = 125°C
VCE = 720 V; IC = IC110
330
360
2.0
ns
ns
mJ
mJ
±
VGE = 15 V; RG = 5 Ω
5.25
Cies
QGon
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 450 V; VGE = 15 V; IC = 20 A
1.8
89
nF
nC
RthJC
RthJH
0.8 K/W
K/W
with heat transfer paste
1.2
DS99394(05/05)
1 - 4
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
FII 30-09G
Diodes
Symbol
Conditions
Maximum Ratings
IF25
IF90
TC = 25°C
TC = 115°C
48
25
A
A
Symbol
VF
Conditions
Characteristic Values
min. typ. max.
IF = 30 A; TVJ = 25°C
TVJ = 125°C
2.4
1.8
2.8
V
V
IRM
trr
IF = 30 A; di /dt = -1100 A/µs; TVJ = 125°C
VR = 600 V; FVGE = 0 V
51
180
A
ns
RthJC
RthCH
(per diode)
with heat transfer paste
1.3 K/W
K/W
1.6
Component
Symbol
Conditions
Maximum Ratings
TVJ
Tstg
-55...+150
-55...+125
°C
°C
VISOL
FC
IISOL ≤ 1 mA; 50/60 Hz
2500
V~
N
mounting force with clip
20...120
Dimensions in mm (1 mm = 0.0394")
Symbol
Cp
Conditions
Characteristic Values
min.
typ. max.
coupling capacity between shorted pins
and mounting tab in the case
40
pF
dS,dA
dS,dA
pin - pin
pin - backside metal
1.7
5.5
mm
mm
Weight
9
g
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
2 - 4
FII 30-09G
Fig. 1. Output Characteristics
@ 25
Fig. 2. Extended Output Characteristics
º
C
@ 25 C
º
70
60
50
40
30
20
10
0
240
200
160
120
80
V
GE
= 15V
V
GE
= 15V
13V
11V
13V
11V
9V
7V
9V
7V
40
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
2
4
6
8
VC E - Volts
10 12 14 16 18 20
VC E - Volts
Fig. 3. Output Characteristics
@ 125
Fig. 4. Dependence of VCE(sat) on
Temperature
º
C
70
60
50
40
30
20
10
0
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
V
GE
= 15V
13V
11V
V
= 15V
GE
I
= 64A
C
9V
7V
I
= 32A
= 16A
C
I
C
5V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-50
-25
0
25
50
75
100 125 150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter voltage
Fig. 6. Input Admittance
6
5.5
5
140
120
100
80
= 25ºC
T
J
I
= 64A
32A
16A
C
4.5
4
3.5
3
60
T = 125ºC
J
40
25ºC
-40ºC
2.5
2
20
0
1.5
4
5
6
7
8
9
10
6
7
8
9
10 11 12 13 14 15 16 17
VG E - Volts
VG E - Volts
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
3 - 4
FII 30-09G
Fig. 8. Dependence of Turn-off
Energy Loss on Gate Resistance
Fig. 7. Transconductance
35
30
25
20
15
10
5
16
14
12
10
8
I
= 64A
= 32A
C
º
T = 125 C
J
-40ºC
=
T
J
V
V
= 15V
GE
CE
I
C
25ºC
12 5 ºC
= 720V
6
4
2
I
= 16A
C
0
0
0
10
20
30
40
50
60
70
80
90
0
20
40 60
I C - Amperes
80
100
R
- Ohms
G
Fig. 10. Dependence of Turn-off
Energy Loss on Temperature
Fig. 9. Dependence of Turn-Off
Energy Loss on Collector Current
11
10
9
11
10
9
R
V
= 5Ω
G
R
= 5Ω
G
T = 125ºC
J
= 15V
I
I
= 64A
= 32A
GE
CE
C
C
V
V
= 15V
GE
CE
8
V
= 720V
8
= 720V
7
7
6
6
5
5
4
4
3
3
T = 25ºC
J
2
2
I
= 16A
C
1
1
0
0
15
20
25
30
35
40
45
50
55
60
25 35 45 55 65 75 85 95 105 115 125
T - Degrees Centigrade
J
I C - Amperes
Fig. 11. Dependence of Turn-off
Switching Time on Gate Resistance
Fig. 12. Dependence of Turn-off
Switching Time on Collector Current
800
500
450
400
350
300
250
200
150
td(off)
td(off)
tfi
- - - - -
I
= 16A
32A
64A
C
tfi
700
600
500
400
300
200
- - - - - -
R
= 5Ω,
V
GE
= 15V
G
T = 125ºC
J
V
= 720V
CE
V
V
= 15V
GE
CE
= 720V
T = 125ºC
J
I
= 64A
C
= 25ºC
T
J
I
= 32A
16A
C
5
10
15
20
25 30
R G - Ohms
35
40
45
50
15 20 25 30 35 40 45 50 55 60 65
I C - Amperes
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
4 - 4
FII 30-09G
Fig. 13. Dependence of Turn-off
Switching Time on Temperature
Fig. 14. Gate Charge
400
350
300
250
200
150
16
14
12
10
8
td(off)
V
= 450V
CE
I
= 16A
32A
C
tfi
- - - - - -
I = 32A
C
R
= 5Ω
G
64A
I = 10mA
G
V
= 15V
GE
CE
V
= 720V
6
4
I
= 64A
32A
C
2
16A
0
25 35 45 55 65 75 85 95 105 115 125
0
10 20 30 40 50 60 70 80 90 100
T J - Degrees Centigrade
Q G - nanoCoulombs
Fig. 16. Reverse-Bias Safe
Operating Area
Fig. 15. Capacitance
10000
1000
100
70
60
50
40
30
20
10
0
f = 1 MHz
C
ies
C
oes
T = 125ºC
J
R
= 10Ω
G
C
res
dV/dT < 10V/ns
10
0
5
10
15
20
25
30
35
40
100 200 300 400 500 600 700 800 900
VC E - Volts
VC E - Volts
Fig. 17. Maximum Transient Thermal Resistance
1
0.1
0.01
0.1
1
10
100
1000
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
5 - 4
FII 30-09G
Diode Data:
70
A
5
60
A
TVJ=100°C
VR = 600V
TVJ=100°C
VR = 600V
µC
60
50
4
3
2
1
0
Qr
IRM
IF 50
IF= 60A
IF= 30A
IF= 15A
IF= 60A
IF= 30A
IF=15A
40
30
20
10
0
40
30
20
10
0
TVJ=150°C
TVJ=100°C
TVJ=25°C
A/µs
-diF/dt
0
1
2
3
V
4
100
1000
0
200 400 600 1000
A/µs
-diF/dt
VF
Fig. 18. Forward current IF versus VF
2.0
Fig. 19. Reverse recovery charge Qr
versus -diF/dt
Fig. 20. Peak reverse current IRM
versus -diF/dt
220
120
1.2
µs
TVJ=100°C
TVJ=100°C
VR = 600V
ns
IF = 30A
V
200
VFR
tfr
1.5
Kf
tfr
VFR
trr
80
40
0
0.8
180
IF= 60A
1.0
IF= 30A
IRM
IF=15A
160
0.4
0.5
140
120
Qr
0.0
0
A/µs
0
40
80
120
160
0
200 400 600 1000
0
200 400 600 1000
C
A/µs
diF/dt
TVJ
-diF/dt
Fig. 21. Dynamic parameters Qr, IRM
versus TVJ
Fig. 22. Recovery time trr versus -diF/dt
Fig. 23. Peak forward voltage VFR and
tfr versus diF/dt
2
1
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
K/W
1
2
3
0.465
0.179
0.256
0.0052
0.0003
0.0397
ZthJC
0.1
Note 1 :
Fig(24) will have Zthjc=1.3 K/W as
i4 pak uses DCB
0.01
0.001
0.00001
s
0.0001
0.001
0.01
0.1
1
t
1
Fig. 24 Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
6 - 4
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