IXBH24N170 [IXYS]
Insulated Gate Bipolar Transistor, 60A I(C), 1700V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN;
| 型号： | IXBH24N170 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 60A I(C), 1700V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN 局域网 栅 瞄准线 功率控制 晶体管 |
| 文件： | 总5页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
VCES = 1700V
IC110 = 24A
VCE(sat) ≤ 2.5V
IXBT24N170
IXBH24N170
TO-268 (IXBT)
G
E
Symbol
VCES
Test Conditions
Maximum Ratings
C (Tab)
TJ = 25°C to 150°C
1700
1700
V
V
TO-247 (IXBH)
VCGR
TJ = 25°C to 150°C, RGE = 1MΩ
VGES
VGEM
Continuous
Transient
± 20
± 30
V
V
IC25
IC110
ICM
TC = 25°C
60
24
A
A
A
G
C
TC = 110°C
TC = 25°C, 1ms
C (Tab)
E
230
G = Gate
E = Emiiter
C
= Collector
SSOA
VGE = 15V, TVJ = 125°C, RG = 10Ω
ICM = 50
A
V
Tab = Collector
(RBSOA)
Clamped Inductive Load
VCES ≤ 1360
PC
TC = 25°C
250
W
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
-55 ... +150
Features
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
300
260
°C
°C
z
High Blocking Voltage
z International Standard Packages
z Low Conduction Losses
Md
Mounting Torque (TO-247)
1.13/10
Nm/lb.in.
Weight
TO-268
TO-247
4
6
g
g
Advantages
z Low Gate Drive Requirement
z High Power Density
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
1700
2.5
Typ.
Max.
Applications
BVCES
VGE(th)
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
V
V
z Switch-Mode and Resonant-Mode
Power Supplies
5.0
z Uninterruptible Power Supplies (UPS)
z Laser Generators
ICES
VCE = 0.8 • VCES, VGE = 0V
25 μA
500 μA
TJ = 125°C
TJ = 125°C
z Capacitor Discharge Circuits
z AC Switches
IGES
VCE = 0V, VGE = ± 20V
±100 nA
VCE(sat)
IC = IC110, VGE = 15V, Note 1
2.5
V
V
2.4
© 2013 IXYS CORPORATION, All Rights Reserved
DS100190A(03/13)
IXBT24N170
IXBH24N170
Symbol
Test Conditions
Characteristic Values
TO-268 Outline
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
IC = IC110, VCE = 10V, Note 1
15
25
S
Cies
Coes
Cres
2790
163
60
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
140
16
nC
nC
nC
IC = IC110, VGE = 15V, VCE = 0.5 • VCES
Qgc
60
Terminals: 1 - Gate
2,4 - Collector
3 - Emitter
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
33
82
ns
ns
ns
ns
Resistive Switching Times, TJ = 25°C
IC = IC110, VGE = 15V
315
750
VCE = 850V, RG = 10Ω
35
155
325
960
ns
ns
ns
ns
Resistive Switching Times, TJ = 125°C
IC = IC110, VGE = 15V
VCE = 850V, RG = 10Ω
RthJC
RthCS
0.50 °C/W
°C/W
TO-247
0.21
TO-247 Outline
Reverse Diode
∅ P
1
2
3
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
VF
IF = 24A, VGE = 0V
2.8
V
IF = 12A, VGE = 0V, -diF/dt = 100A/μs
trr
1.06
26
μs
VR = 100V
e
IRM
A
Terminals: 1 - Gate
2 - Collector
3 - Emitter
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Note
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
∅P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXBT24N170
IXBH24N170
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
48
40
32
24
16
8
300
250
200
150
100
50
VGE = 25V
VGE = 25V
19V
15V
13V
11V
21V
19V
17V
13V
11V
15V
9V
7V
9V
7V
5V
8
5V
0
0
0
0
5
0.5
1
1.5
2
2.5
3
3.5
25
0
-50
3
2
4
6
10
12
14
16
18
20
150
9
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
48
40
32
24
16
8
VGE = 25V
VGE = 15V
19V
15V
13V
11V
I C = 48A
9V
7V
I C = 24A
I C = 12A
5V
0
0.5
1
1.5
2
2.5
3
-25
0
25
50
75
100
125
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
100
90
80
70
60
50
40
30
20
10
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
TJ = 25ºC
I C = 48A
24A
TJ = 125ºC
25ºC
- 40ºC
12A
4
5
6
7
8
7
9
11
13
15
17
19
21
23
VGE - Volts
VGE - Volts
© 2013 IXYS CORPORATION, All Rights Reserved
IXBT24N170
IXBH24N170
Fig. 8. Forward Voltage Drop of Intrinsic Diode
Fig. 7. Transconductance
50
45
40
35
30
25
20
15
10
5
80
70
60
50
40
30
20
10
0
TJ = - 40ºC
25ºC
TJ = 125ºC
TJ = 25ºC
125ºC
0
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
40
10
0
10
20
30
40
50
60
70
80
90
100 110 120
VF - Volts
IC - Amperes
Fig. 9. Gate Charge
Fig. 10. Capacitance
16
14
12
10
8
10,000
1,000
100
f = 1 MHz
VCE = 850V
I
I
C = 24A
G = 10mA
C
C
C
ies
oes
res
6
4
2
10
0
0
5
10
15
20
25
30
35
0
20
40
60
80
100
120
140
VCE - Volts
QG - NanoCoulombs
Fig. 11. Reverse-Bias Safe Operating Area
Fig. 12. Maximum Transient Thermal Impedance
1
60
50
40
30
20
10
0
0.1
0.01
TJ = 125ºC
RG = 10Ω
dv / dt < 10V / ns
0.001
200
400
600
800
1000
1200
1400
1600
1800
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
VCE - Volts
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBT24N170
IXBH24N170
Fig. 14. Resistive Turn-on Rise Time
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
vs. Collector Current
350
300
250
200
150
100
50
350
300
250
200
150
100
50
RG = 10Ω , VGE = 15V
RG = 10Ω , VGE = 15V
VCE = 850V
VCE = 850V
I C = 48A
TJ = 125ºC
I C = 24A
TJ = 25ºC
0
0
10
15
20
25
30
35
40
45
50
25
10
10
35
45
55
65
75
85
95
105
115
125
IC - Amperes
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
500
450
400
350
300
250
200
150
100
100
90
80
70
60
50
40
30
20
1200
1100
1000
900
340
330
320
310
300
290
280
270
260
tf
t
d(off) - - - -
tr
t
d(on) - - - -
RG = 10Ω, VGE = 15V
TJ = 125ºC, VGE = 15V
VCE = 850V
VCE = 850V
I C = 48A
I C = 24A
800
I C = 24A
700
600
500
I C = 48A
400
25
35
45
55
65
75
85
95
105
115
125
15
20
25
30
35
40
45
50
55
RG - Ohms
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
Fig. 17. Resistive Turn-off Switching Times
vs. Collector Current
1500
1400
1300
1200
1100
1000
900
1100
1000
900
800
700
600
500
400
300
200
100
1300
1200
1100
1000
900
420
400
380
360
340
320
300
280
260
240
tf
td(off
) - - - -
tf
t
d(off) - - - -
TJ = 125ºC, VGE = 15V
RG = 10Ω, VGE = 15V
VCE = 850V
VCE = 850V
800
I C = 24A
700
800
I C = 48A
600
700
TJ = 25ºC, 125ºC
500
600
400
500
15
20
25
30
35
40
45
50
10
15
20
25
30
35
40
45
50
55
RG - Ohms
IC - Amperes
© 2013 IXYS CORPORATION, All Rights Reserved
IXYS REF: B_24N170(6N)9-09-09
相关型号：
IXBH28N170A
Insulated Gate Bipolar Transistor, 30A I(C), 1700V V(BR)CES, N-Channel, TO-247AD, PLASTIC PACKAGE-3
LITTELFUSE
IXBH28N170A
Insulated Gate Bipolar Transistor, 30A I(C), 1700V V(BR)CES, N-Channel, TO-247AD, PLASTIC PACKAGE-3
IXYS
IXBH2N250
Insulated Gate Bipolar Transistor, 5A I(C), 2500V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN
IXYS
IXBH40N140
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor - N-Channel, Enhancement Mode
IXYS
IXBH40N160
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor - N-Channel, Enhancement Mode
IXYS
©2020 ICPDF网 联系我们和版权申明