IXFH12N120 [IXYS]
High Voltage HiPerFET Power MOSFET; 高压HiPerFET功率MOSFET
| 型号： | IXFH12N120 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Voltage HiPerFET Power MOSFET |
| 文件： | 总4页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VDSS = 1200 V
ID(cont) = 12 A
RDS(on) = 1.4 Ω
IXFH 12N120
HighVoltage
HiPerFET Power
MOSFET
trr
≤ 300 ns
Preliminary Data Sheet
Symbol TestConditions
Maximum Ratings
TO-247 AD
VDSS
VDGR
TJ
TJ
= 25°C to 150°C
1200
1200
V
V
= 25°C to 150°C; RGS = 1 MΩ
VGS
Continuous
Transient
30
40
V
V
D (TAB)
VGSM
ID25
IDM
IAR
TC
TC
= 25°C
12
48
12
A
A
A
= 25°C, pulse width limited by TJM
G = Gate,
S = Source,
D = Drain,
TAB = Drain
EAR
EAS
TC
TC
= 25°C
= 25°C
30
1.0
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
,
10
V/ns
Features
PD
TC
= 25°C
500
W
z International standard package
JEDEC TO-247 AD
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
z Low RDS (on) HDMOSTM process
-55 ... +150
z Rugged polysilicon gate cell structure
z Fast switching times
Md
Mounting torque
1.13/10 Nm/lb.in.
Weight
6
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Applications
z
Switch-mode and resonant-mode
power supplies
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
z
Motor controls
z
Uninterruptible Power Supplies (UPS)
z
DC choppers
VDSS
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 4 mA
1200
3
V
V
VGS(th)
5
Advantages
IGSS
IDSS
VGS = 30 VDC, VDS = 0
100 nA
z
Easy to mount with 1 screw
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
50 µA
(isolated mounting screw hole)
3
mA
z
Space savings
z
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.4
Ω
High power density
DS99334(02/05)
© 2005 IXYS All rights reserved
IXFH 12N120
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
VDS = 20 V; ID = 0.5 ID25, pulse test
6
10
S
Ciss
Coss
Crss
3400
280
pF
pF
pF
1
2
3
VGS = 0 V, VDS = 25 V, f = 1 MHz
105
td(on)
tr
td(off)
tf
24
25
35
17
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, 0.5 ID25
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
RG = 1.5 Ω (External)
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
Qg(on)
Qgs
95
22
50
nC
nC
nC
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
Qgd
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
RthJC
RthCK
0.25 K/W
K/W
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
0.25
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
∅P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
Symbol
TestConditions
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
IS
VGS = 0 V
12
48
A
A
V
ISM
VSD
Repetitive; pulse width limited by TJM
IF = IS, VGS = 0 V,
1.5
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = IS, -di/dt = 100 A/µs, VR = 100 V
300 ns
Irm
QRM
6.0
1.2
A
µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1 6,162,665
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
6,534,343
6,583,505
IXFH 12N120
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
º
@ 25 C
º
@ 25 C
12
11
10
9
20
18
16
14
12
10
8
V
= 10V
8V
7.5V
GS
V
GS
= 10V
8V
7V
6.5V
7V
8
7
6
6.5V
5
4
6
6.5V
6V
3
4
6V
14
2
2
1
0
0
0
0
0
2
4
6
8
10
12
16
18
0
3
6
9
12 15 18 21 24 27 30
VD S - Volts
VD S - Volts
Fig. 3. Output Characteristics
@ 125
Fig. 4. RDS(on Normalized to 0.5 ID25
Value vs. Junction Temperature
)
ºC
3.1
2.8
2.5
2.2
1.9
1.6
1.3
1
12
11
10
9
V
GS
= 10V
8V
7V
V
GS
= 10V
8
6.5V
6V
7
I
= 12A
D
6
5
I
= 6A
D
4
3
5.5V
5V
2
0.7
0.4
1
0
-50
-25
0
25
50
TJ - Degrees Centigrade
75
100 125 150
4
8
12 16 20 24 28 32 36 40
VD S - Volts
Fig. 5. RDS(on) Normalized to
0.5 ID25 Value vs. ID
Fig. 6. Drain Current vs. Case
Temperature
14
12
10
8
2.8
2.6
2.4
2.2
2
V
= 10V
GS
T = 125ºC
J
1.8
1.6
1.4
1.2
1
6
4
T = 25ºC
J
2
0.8
0
2
4
6
8 10 12 14 16 18 20
I D - Amperes
-50
-25
0
25
TC - Degrees Centigrade
50
75
100 125 150
© 2005 IXYS All rights reserved
IXFH 12N120
Fig. 8. Transconductance
Fig. 7. Input Admittance
16
14
12
10
8
20
18
16
14
12
10
8
T = -40ºC
J
25ºC
125ºC
6
T = 125ºC
J
25ºC
6
4
4
-40ºC
2
2
0
0
4.5
0.4
0
5
5.5
6
VG S - Volts
6.5
7
7.5
0
2
4
6
8
I D - Amperes
10
12
14
16
18
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
36
33
30
27
24
21
18
15
12
9
10
9
8
7
6
5
4
3
2
1
0
V
DS
= 600V
I
I
= 6A
D
G
= 10mA
T = 125ºC
J
T = 25ºC
J
6
3
0
0.5
0.6 0.7
VS D - Volts
0.8
0.9
1
0
10 20 30 40 50 60 70 80 90 100
Q G - nanoCoulombs
Fig. 12. Maximum Transient Thermal
Resistance
Fig. 11. Capacitance
10000
1000
100
1.00
0.10
0.01
f = 1MHz
C
C
iss
oss
C
rss
10
5
10
15
20
VD S - Volts
25
30
35
40
1
10 100
Pulse Width - milliseconds
1000
IXYS reserves the right to change limits, test conditions, and dimensions.
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