IXFH12N90Q [IXYS]
HiPerFET Power MOSFETs Q Class; HiPerFET功率MOSFET Q类
| 型号： | IXFH12N90Q |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs Q Class |
| 文件： | 总2页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
Power MOSFETs
Q Class
IXFH 12N90Q VDSS
IXFT 12N90Q ID25
= 900 V
= 12 A
= 0.9 W
RDS(on)
N-Channel Enhancement Mode
Avalanche Rated
trr £ 200 ns
Low Qg, High dv/dt
Preliminary data sheet
Symbol
TestConditions
MaximumRatings
TO-247 AD (IXFH)
VDSS
VDGR
TJ = 25°C to 150°C
900
900
V
V
TJ = 25°C to 150°C; RGS = 1 MW
VGS
Continuous
Transient
±20
±30
V
V
VGSM
ID25
IDM
TC = 25°C
12
48
A
A
TC = 25°C,
pulse width limited by TJM
IAR
TC = 25°C
12
30
5
A
mJ
EAR
TC = 25°C
TO-268 (D3) ( IXFT)
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
V/ns
PD
TC = 25°C
300
W
G
S
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
-55 ... +150
G = Gate
S = Source
D
= Drain
TL
1.6 mm (0.063 in) from case for 10 s
Mountingtorque
300
°C
TAB = Drain
Md
1.13/10
Nm/lb.in.
Weight
TO-247AD
TO-268
6
4
g
g
Features
• IXYS advanced low Qg process
• Low gate charge and capacitances
- easier to drive
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min.
typ.
max.
- faster switching
• Internationalstandardpackages
• Low RDS (on)
• UnclampedInductiveSwitching(UIS)
rated
VDSS
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 4 mA
900
V
V
VGS(th)
2.5
5.5
• MoldingepoxiesmeetUL94V-0
flammabilityclassification
IGSS
VGS = ±20 VDC, VDS = 0
±100
nA
IDSS
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
50
1
mA
mA
Advantages
• Easy to mount
• Space savings
• Highpowerdensity
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
0.9
W
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98572(11/98)
1 - 2
IXFH 12N90Q
IXFT 12N90Q
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD (IXFH) Outline
VDS = 10 V; ID = 0.5 • ID25, pulse test
6
10
S
Ciss
Coss
Crss
2900
315
50
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
20
23
40
15
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2 W (External),
Qg(on)
Qgs
90
30
40
nC
nC
nC
Dim. Millimeter
Inches
Min. Max. Min. Max.
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
Qgd
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
RthJC
RthCK
0.42
K/W
K/W
E
F
4.32 5.49 0.170 0.216
(TO-247)
0.25
5.4
6.2 0.212 0.244
G
H
1.65 2.13 0.065 0.084
-
4.5
-
0.177
J
K
1.0
1.4 0.040 0.055
Source-DrainDiode
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
10.8 11.0 0.426 0.433
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
Symbol
IS
TestConditions
N
1.5 2.49 0.087 0.102
VGS = 0 V
12
48
A
ISM
Repetitive; pulse width limited by TJM
A
V
VSD
IF = IS, VGS = 0 V,
1.3
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr
QRM
IRM
200
0.6
7
ns
mC
A
IF = IS, -di/dt = 100 A/ms, VR = 100 V
TO-268AA (D3 PAK)
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Min. Recommended Footprint
A
A1
A2
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
b
b2
C
1.15
1.9
.4
1.45
2.1
.65
.045 .057
.75
.83
.016 .026
D
E
E1
13.80 14.00
15.85 16.05
.543 .551
.624 .632
.524 .535
13.3
5.45 BSC
18.70 19.10
13.6
e
H
L
.215 BSC
.736 .752
.094 .106
2.40
2.70
L1
L2
L3
L4
1.20
1.00
0.25 BSC
1.40
1.15
.047 .055
.039 .045
.010 BSC
3.80
4.10
.150 .161
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 2
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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