IXFH12N90P [IXYS]
Polar Power MOSFET HiPerFET; Polar功率MOSFET HiperFET
| 型号： | IXFH12N90P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Polar Power MOSFET HiPerFET |
| 文件： | 总4页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
PolarTM Power MOSFET
HiPerFETTM
IXFH12N90P
IXFV12N90P
IXFV12N90PS
VDSS = 900V
ID25 = 12A
RDS(on) ≤ 900mΩ
≤ 300ns
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
PLUS220 (IXFV)
G
D
S
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
900
900
V
V
D (TAB)
VDGR
PLUS220SMD (IXFV_S)
VGSS
VGSM
Continuous
Transient
± 30
± 40
V
V
ID25
IDM
TC = 25°C
12
24
A
A
TC = 25°C, pulse width limited by TJM
G
S
IA
TC = 25°C
TC = 25°C
6
A
D (TAB)
EAS
500
mJ
TO-247 (IXFH)
dV/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
15
V/ns
W
380
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
D (TAB)
-55 ... +150
TL
Maximum lead temperature for soldering
Plastic body for 10s
300
260
°C
°C
G = Gate
S = Source TAB = Drain
D
= Drain
TSOLD
Md
Mounting torque (TO-247)
Mounting force (PLUS220)
1.13/10
Nm/lb.in.
N/lb.
FC
11..65/2.5..14.6
Features
z International standard packages
z Avalanche Rated
z Low package inductance
z Fast intrinsic diode
Weight
TO-247
PLUS220 types
6
4
g
g
Advantages
z
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
z
(TJ = 25°C, unless otherwise specified)
Min.
900
3.5
Typ.
Max.
z
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
VDS = VGS, ID = 1mA
VGS = ± 30V, VDS = 0V
V
V
Applications:
6.5
z Switched-mode and resonant-mode
power supplies
± 100 nA
IDSS
VDS = VDSS
VGS = 0V
25 μA
1 mA
z DC-DC Converters
TJ = 125°C
z Laser Drivers
z AC and DC motor drives
z Robotics and servo controls
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
900 mΩ
DS100056(10/08)
© 2008 IXYS CORPORATION, All rights reserved
IXFH12N90P IXFV12N90P
IXFV12N90PS
Symbol
Test Conditions
Characteristic Values
PLUS220 (IXFV) Outline
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
5.0
8.2
S
RGi
Gate input resistance
1.7
Ω
Ciss
Coss
Crss
3080
200
33
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
32
34
50
68
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2Ω (External)
Qg(on)
Qgs
56
18
27
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCS
0.33 °C/W
°C/W
(TO-247, PLUS220)
0.25
Source-Drain Diode
Characteristic Values
TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
IS
VGS = 0V
12
A
A
V
ISM
VSD
Repetitive, pulse width limited by TJM
IF = IS, VGS = 0V, Note 1
48
TO-247 (IXFH) Outline
1.5
trr
300 ns
IF = 6A, -di/dt = 100A/μs
QRM
IRM
0.9
μC
VR = 100V, VGS = 0V
7.8
A
∅ P
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
PLUS220SMD (IXFV_S) Outline
e
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
PRELIMINARY TECHNICAL INFORMATION
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
∅P 3.55
Q
3.65
.140 .144
5.89
6.40 0.232 0.252
R
S
4.32
5.49
.170 .216
242 BSC
6.15 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXFH12N90P IXFV12N90P
IXFV12N90PS
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
12
11
10
9
24
22
20
18
16
14
12
10
8
VGS = 10V
8V
VGS = 10V
8V
8
7V
7
6
7V
5
4
6V
5V
3
6
6V
5V
2
4
1
2
0
0
0
0
0
1
2
3
4
5
6
7
8
9
10
11
0
5
10
15
20
25
30
150
150
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 6A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
12
11
10
9
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS = 10V
8V
VGS = 10V
I D = 12A
8
7
7V
6V
I D = 6A
6
5
4
3
2
1
0
2
4
6
8
10 12 14 16 18 20 22 24 26
VDS - Volts
-50
-25
0
25
50
75
100
125
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 6A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
13
12
11
10
9
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGS = 10V
TJ = 125ºC
8
7
6
5
4
TJ = 25ºC
3
2
1
0
2
4
6
8
10 12 14 16 18 20 22 24
ID - Amperes
-50
-25
0
25
50
75
100
125
TC - Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved
IXFH12N90P IXFV12N90P
IXFV12N90PS
Fig. 7. Input Admittance
Fig. 8. Transconductance
14
12
10
8
14
12
10
8
TJ = - 40ºC
TJ = 125ºC
25ºC
- 40ºC
25ºC
125ºC
6
6
4
4
2
2
0
0
0
2
4
6
8
10
12
14
4.5
0.3
0
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
1.1
40
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
16
14
12
10
8
35
30
25
20
15
10
5
VDS = 450V
I
I
D = 6A
G = 10mA
6
TJ = 125ºC
4
TJ = 25ºC
2
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
10
20
30
40
50
60
70
80
VSD - Volts
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
10,000
1,000
100
1.00
0.10
0.01
C
iss
C
oss
C
= 1 MHz
5
f
rss
10
0.00001
0.0001
0.001
0.01
0.1
1
10
10
15
20
25
30
35
Pulse Width - Seconds
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_12N90P(65)10-22-08
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